BSC440N10NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion VDS 100 V RDS(on),max 44 mW ID 18 A • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) PG-TDSON-8 • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 Type Package Marking BSC440N10NS3 G PG-TDSON-8 440N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 18 T C=100 °C 11 T A=25 °C, R thJA=50 K/W 2) 5.3 Unit A Pulsed drain current3) I D,pulse T C=25 °C 72 Avalanche energy, single pulse E AS I D=12 A, R GS=25 W 18 mJ Gate source voltage V GS ±20 V Power dissipation P tot 29 W Operating and storage temperature T j, T stg -55 ... 150 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 2.4 55/150/56 page 1 2009-10-30 BSC440N10NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 4.3 - - 50 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA 6 cm2 cooling area2) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=12 µA 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=12 A - 38 44 mW V GS=6 V, I D=6 A - 48.3 86 - 0.8 - W 8 15 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=12 A J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) see figure 3 Rev. 2.4 page 2 2009-10-30 BSC440N10NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 610 810 - 120 160 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 6 - Turn-on delay time t d(on) - 9 - Rise time tr - 3 - Turn-off delay time t d(off) - 13 - Fall time tf - 3 - Gate to source charge Q gs - 2.7 - Gate to drain charge Q gd - 1.3 - Switching charge Q sw - 2.2 - Gate charge total Qg - 8.1 10.8 Gate plateau voltage V plateau - 4.5 - Output charge Q oss - 12 16 nC - - 18 A - - 72 - 0.9 1.2 V - 44 - ns - 61 - nC V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=6 A, R G=1.6 W pF ns Gate Charge Characteristics4) V DD=50 V, I D=6 A, V GS=0 to 10 V V DD=50 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=18 A, T j=25 °C V R=50 V, I F=6 A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition Rev. 2.4 page 3 2009-10-30 BSC440N10NS3 G 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 40 20 30 15 ID [A] Ptot [W] 1 Power dissipation 20 10 10 5 0 0 0 40 80 120 160 0 40 80 TC [°C] 120 160 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 102 100 ns 0.5 ZthJC [K/W] 1 µs ID [A] 10 µs 101 100 µs 0.2 100 0.1 1 ms 0.05 DC 0.02 100 0.01 single pulse 10-1 10-1 10-1 100 101 102 103 VDS [V] Rev. 2.4 tp [s] page 4 2009-10-30 BSC440N10NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 50 70 5V 60 40 5.5 V 6V 10 V 50 30 RDS(on) [mW] 7V ID [A] 6V 20 5.5 V 7V 40 10 V 30 20 5V 10 10 4.5 V 0 0 0 1 2 3 0 10 20 VDS [V] 30 40 50 60 20 25 30 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 40 30 25 30 gfs [S] ID [A] 20 20 15 10 10 5 150 °C 25 °C 0 0 0 2 4 6 VGS [V] Rev. 2.4 0 5 10 15 ID [A] page 5 2009-10-30 BSC440N10NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=12 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 90 4 80 3.5 70 3 120 µA 2.5 98 % 50 VGS(th) [V] RDS(on) [mW] 60 typ 40 12 µA 2 1.5 30 1 20 0.5 10 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 103 Ciss 100 IF [A] C [pF] Coss 102 25 °C 150 °C 10 101 150 °C, 98% Crss 25 °C, 98% 100 1 0 20 40 60 80 VDS [V] Rev. 2.4 0 0.5 1 1.5 2 VSD [V] page 6 2009-10-30 BSC440N10NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 W V GS=f(Q gate); I D=6 A pulsed parameter: T j(start) parameter: V DD 100 10 80 V 8 50 V 10 VGS [V] IAS [A] 6 25 °C 20 V 4 100 °C 125 °C 2 1 0 0.1 1 10 100 1000 0 2 4 6 8 Qgate [nC] tAV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 110 V GS Qg VBR(DSS) [V] 105 100 V gs(th) 95 Q g(th) Q sw Q gs 90 -60 -20 20 60 100 140 Q gate Q gd 180 Tj [°C] Rev. 2.4 page 7 2009-10-30 BSC440N10NS3 G Package Outline: PG-TDSON-8 Rev. 2.4 page 8 2009-10-30 BSC440N10NS3 G Dimensions in mm Rev. 2.4 page 9 2009-10-30 BSC440N10NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 page 10 2009-10-30