Product Brief 600V CoolMOS™ C7

Product Brief
600 V CoolMOS™ C7 Series
A Stepping Stone to GaN
The new 600 V CoolMOS™ C7 series from Infineon offers a ~50% reduction in turn-off losses
(Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF
and other hard-switching topologies.
Efficiency and TCO (total cost of ownership) driven applications benefit from the higher
efficiency offered by CoolMOS™ C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies
can be achieved. In the case of a 2.5 kW server PSU, for example, using 600 V C7 MOSFETs in
a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.
BoM (bill of material) cost driven applications can use the efficiency gained at full load by
the combination of C7 and TO-247 4pin package. This is done by increasing the RDS(on) of
the MOSFET so that it matches previous 3pin package full load efficiency enabling benefits
in costs (i.e. 40 mΩ vs 70 mΩ device). Doubling the switching frequency can also save
magnetic component material. Cost savings of upto 30% in copper windings and 45% in
core (dependant on material used) can be achieved.
The CoolMOS™ C7 Best-in-Class RDS(ON) max [mΩ] competitor comparison
C7 vs. Competition in TO-220 and D2PAK + Benefit in package size reduction
CompA
650 V C7
40
600 V C7
21.1 mm
45
20.32 mm
63
„„ 600 V C7 in TO-220 with 36% lower RDS(on) than nearest competitor
www.infineon.com/600V-C7
10.36 mm
15.95 mm
16.13 mm
World‘s best RDS(on) got even better
88
CompB
Package size reduction
14.0 mm
C7 comes with the lowest RDS(on) in TO-220 / D2PAK
Key Features
„„ Reduced switching loss parameters
such as Qg, Coss, enabling higher
switching frequency
„„ 50% Eoss reduction compared to older CP technology and close to GaN
„„ Lowest RDS(on) * A in the world (<1 Ω.mm²)
„„ Suitable for high-end resonant
topologies
Key Benefits
„„ Doubling the switching frequency
will reduce the size & cost of magnetic components (e.g. 65 kHz – 130 kHz)
„„ Increased efficiency in PFC & TTF
topologies
„„ Smaller packages for same RDS(ON)
lead to power density benefits
„„ Suitable for high-end LLC circuits
Applications
„„ Telecom
„„ Server
„„ High-end PC Power
„„ Solar
„„ Industrial
Product Brief
600 V CoolMOS™ C7 Series
A Stepping Stone to GaN
Highest Efficiency in PFC (Power Factor Correction) & Resonant LLC
LLC 600 W delta efficiency, with deadtime optimization, with bias
Efficiency difference for 90 VAC (PFC CCM, 1.150 W @ 65 kHz)
0.8
0,2
0.7
0.1
∆ Efficiency
[%]
0.6
0.5
0.4
Average
0.3
0.2
0.1
0.0
0,7%
0
0,4%
200
400
600
800
0.0
-0.1
-0.2
-0.3
1.000
-0.4
1.200
5
10
15
20
25
30
Pout [W]
IPZ60R040C7
IPW60R040C7
IPP60R180C7
IPW60R045CP
Device
Parameters
Competitor A
Competitor B
600 V
CoolMOS™ C7
IPW60R040C7
Comments
RDS(on) max [mΩ]
38 mΩ
40 mΩ
40 mΩ
Similar RDS(on) for
real comparison
Gate Charge Qg typ 185 nC
[nC]
135 nC
107 nC
Coss [pF]
200 pF
140 pF
85 pF
Qg, Coss, Eoss to
show advantages in switching
losses
F.O.M RDS(on) * Qg
[Ω.nc]
7.0 Ω.nc
5.4 Ω.nc
4.3 Ω.nc
Benefits over
light load and
full load
Status: May 2015
IPP60R190P6
35
40
45
50
Comp. A
Choke example from Infineon 800 W 130 kHz
demonstrator board
130 kHZ
65 kHz
Similar losses at higher frequency leads to cost reduction
of magnetic components with improved power density
1st Wave Product Portfolio NEW 600 V CoolMOS™ C7 Series
RDS(on) max
TO-220
TO-247
180 mΩ
IPP60R180C7
IPW60R180C7
99 mΩ
IPP60R099C7
IPW60R099C7
IPZ60R099C7
40 mΩ
IPP60R040C7
IPW60R040C7
IPZ60R040C7
Published by
Infineon Technologies Austria AG
9500 Villach, Austria
© 2015 Infineon Technologies AG.
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Order Number: B152-I0124-V1-7600-EU-EC-P
Date: 05 / 2015
TO-247 4pin
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