CAV25512 D

CAV25512
512-Kb SPI Serial CMOS
EEPROM
Description
The CAV25512 is a 512−Kb Serial CMOS EEPROM device
internally organized as 64Kx8 bits. This features a 128−byte page
write buffer and supports the Serial Peripheral Interface (SPI)
protocol. The device is enabled through a Chip Select (CS) input. In
addition, the required bus signals are clock input (SCK), data input
(SI) and data output (SO) lines. The HOLD input may be used to pause
any serial communication with the CAV25512 device. The device
features software and hardware write protection, including partial as
well as full array protection.
On−Chip ECC (Error Correction Code) makes the device suitable
for high reliability applications.
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SOIC−8
V SUFFIX
CASE 751BD
WLCSP−8
C8A SUFFIX
CASE 567MB
TSSOP−8
Y SUFFIX
CASE 948AL
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Automotive Temperature Grade 1 (−40°C to +125°C)
10 MHz SPI Compatible
2.5 V to 5.5 V Supply Voltage Range
SPI Modes (0,0) & (1,1)
128−byte Page Write Buffer
Additional Identification Page with Permanent Write Protection
Self−timed Write Cycle
Hardware and Software Protection
Block Write Protection
− Protect 1/4, 1/2 or Entire EEPROM Array
Low Power CMOS Technology
1,000,000 Program/Erase Cycles
100 Year Data Retention
SOIC, TSSOP and WLCSP 8−lead Packages
This Device is Pb−Free, Halogen Free/BFR Free, and RoHS
Compliant
PIN CONFIGURATION
Pin A1
Reference
CS
1
VCC
SO
HOLD
WP
SCK
VSS
SCK
SI
WP
SOIC (V), TSSOP (Y)
VSS
PIN FUNCTION
Pin Name
Function
SO
Serial Data Output
SI
WP
Write Protect
CS
VSS
Ground
WP
SO
SI
HOLD
Serial Data Input
SCK
SCK
HOLD
VCC
VSS
CS
WLCSP (C8A)
(Top View)
Chip Select
CAV25512
HOLD
SO
CS
VCC
VCC
SI
Serial Clock
Hold Transmission Input
Power Supply
Figure 1. Functional Symbol
ORDERING INFORMATION
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
© Semiconductor Components Industries, LLC, 2016
June, 2016 − Rev. 3
1
See detailed ordering and shipping information in the package
dimensions section on page 14 of this data sheet.
Publication Order Number:
CAV25512/D
CAV25512
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Ratings
Units
Operating Temperature
−45 to +130
°C
Storage Temperature
−65 to +150
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. RELIABILITY CHARACTERISTICS (Note 2)
Parameter
Symbol
NEND (Note 3, 4)
TDR
Endurance
Data Retention
Min
Units
1,000,000
Program / Erase Cycles
100
Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode, VCC = 5 V, 25°C.
4. The device uses ECC (Error Correction Code) logic with 6 ECC bits to correct one bit error in 4 data bytes. Therefore, when a single byte
has to be written, 4 bytes (including the ECC bits) are re−programmed. It is recommended to write by multiple of 4 bytes in order to benefit
from the maximum number of write cycles.
Table 3. D. C. OPERATING CHARACTERISTICS (VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified)
Symbol
Parameter
Max
Units
ICCR
Supply Current (Read Mode)
Read, SO open, fSCK = 10 MHz
3
mA
ICCW
Supply Current (Write Mode)
Write, CS = VCC
2
mA
ISB1
Standby Current
VIN = GND or VCC, CS = VCC, WP = VCC,
HOLD = VCC, VCC = 5.5 V
3
mA
ISB2
Standby Current
VIN = GND or VCC, CS = VCC, WP = GND,
HOLD = GND, VCC = 5.5 V
5
mA
Input Leakage Current
VIN = GND or VCC
−2
2
mA
ILO
Output Leakage Current
CS = VCC VOUT = GND or VCC
−2
2
mA
VIL
Input Low Voltage
−0.5
0.3VCC
V
VIH
Input High Voltage
0.7VCC
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 3.0 mA
0.4
V
VOH
Output High Voltage
IOH = −1.6 mA
IL
Test Conditions
Min
VCC − 0.8V
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
CAV25512
Table 4. PIN CAPACITANCE (TA = 25°C, f = 1.0 MHz, VCC = +5.0 V) (Note 2)
Test
Symbol
COUT
CIN
Conditions
Output Capacitance (SO)
Input Capacitance (CS, SCK, SI, WP, HOLD)
Min
Typ
Max
Units
VOUT = 0 V
8
pF
VIN = 0 V
8
pF
Table 5. A.C. CHARACTERISTICS (VCC = 2.5 V to 5.5 V, TA = −40°C to +125°C, unless otherwise specified.) (Note 5)
Symbol
Parameter
Min
Max
Units
10
MHz
fSCK
Clock Frequency
DC
tSU
Data Setup Time
10
ns
tH
Data Hold Time
10
ns
tWH
SCK High Time
40
ns
tWL
SCK Low Time
40
ns
tLZ
HOLD to Output Low Z
25
ns
tRI (Note 6)
Input Rise Time
2
ms
tFI (Note 6)
Input Fall Time
2
ms
tHD
HOLD Setup Time
0
ns
tCD
HOLD Hold Time
10
ns
tV
Output Valid from Clock Low
40
0
ns
tHO
Output Hold Time
ns
tDIS
Output Disable Time
20
ns
tHZ
HOLD to Output High Z
25
ns
tCS
CS High Time
40
ns
tCSS
CS Setup Time
30
ns
tCSH
CS Hold Time
30
ns
tCNS
CS Inactive Setup Time
30
tCNH
CS Inactive Hold Time
30
tWPS
WP Setup Time
10
ns
tWPH
WP Hold Time
10
ns
tWC (Note 7)
Write Cycle Time
5
ms
5. AC Test Conditions:
Input Pulse Voltages: 0.3 VCC to 0.7 VCC
Input rise and fall times: ≤ 10 ns
Input and output reference voltages: 0.5 VCC
Output load: current source IOL max/IOH max; CL = 30 pF
6. This parameter is tested initially and after a design or process change that affects the parameter.
7. tWC is the time from the rising edge of CS after a valid write sequence to the end of the internal write cycle.
Table 6. POWER−UP TIMING (Notes 6, 8)
Symbol
Parameter
Max
Units
tPUR
Power−up to Read Operation
1
ms
tPUW
Power−up to Write Operation
1
ms
8. tPUR and tPUW are the delays required from the time VCC is stable until the specified operation can be initiated.
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3
CAV25512
Pin Description
Functional Description
SI: The serial data input pin accepts op−codes, addresses
and data. In SPI modes (0,0) and (1,1) input data is latched
on the rising edge of the SCK clock input.
SO: The serial data output pin is used to transfer data out of
the device. In SPI modes (0,0) and (1,1) data is shifted out
on the falling edge of the SCK clock.
SCK: The serial clock input pin accepts the clock provided
by the host and used for synchronizing communication
between host and CAV25512.
CS: The chip select input pin is used to enable/disable the
CAV25512. When CS is high, the SO output is tri−stated
(high impedance) and the device is in Standby Mode (unless
an internal write operation is in progress). Every
communication session between host and CAV25512 must be
preceded by a high to low transition and concluded with a low
to high transition of the CS input.
WP: The write protect input pin will allow all write
operations to the device when held high. When WP pin is
tied low and the WPEN bit in the Status Register (refer to
Status Register description, later in this Data Sheet) is set to
“1”, writing to the Status Register is disabled.
HOLD: The HOLD input pin is used to pause transmission
between host and CAV25512, without having to retransmit
the entire sequence at a later time. To pause, HOLD must be
taken low and to resume it must be taken back high, with the
SCK input low during both transitions. When not used for
pausing, it is recommended the HOLD input to be tied to
VCC, either directly or through a resistor.
The CAV25512 device supports the Serial Peripheral
Interface (SPI) bus protocol, modes (0,0) and (1,1). The
device contains an 8−bit instruction register. The instruction
set and associated op−codes are listed in Table 7.
Reading data stored in the CAV25512 is accomplished by
simply providing the READ command and an address.
Writing to the CAV25512, in addition to a WRITE
command, address and data, also requires enabling the
device for writing by first setting certain bits in a Status
Register, as will be explained later.
After a high to low transition on the CS input pin, the
CAV25512 will accept any one of the six instruction
op−codes listed in Table 7 and will ignore all other possible
8−bit combinations. The communication protocol follows
the timing from Figure 2.
The CAV25512 features an additional Identification Page
(128 bytes) which can be accessed for Read and Write
operations when the IPL bit from the Status Register is set
to “1”. The user can also choose to make the Identification
Page permanent write protected.
Table 7. INSTRUCTION SET
Instruction
Opcode
Operation
WREN
0000 0110
Enable Write Operations
WRDI
0000 0100
Disable Write Operations
RDSR
0000 0101
Read Status Register
WRSR
0000 0001
Write Status Register
READ
0000 0011
Read Data from Memory
WRITE
0000 0010
Write Data to Memory
tCS
CS
tCSS
tCNH
tWH
tWL
tCNS
tCSH
SCK
tSU
tH
tRI
tFI
VALID
IN
SI
tV
tV
tDIS
tHO
HI−Z
SO
VALID
OUT
Figure 2. Synchronous Data Timing
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4
HI−Z
CAV25512
Status Register
The Status Register, as shown in Table 8, contains a
number of status and control bits.
The RDY (Ready) bit indicates whether the device is busy
with a write operation. This bit is automatically set to 1 during
an internal write cycle, and reset to 0 when the device is ready
to accept commands. For the host, this bit is read only.
The WEL (Write Enable Latch) bit is set/reset by the
WREN/WRDI commands. When set to 1, the device is in a
Write Enable state and when set to 0, the device is in a Write
Disable state.
The BP0 and BP1 (Block Protect) bits determine which
blocks are currently write protected. They are set by the user
with the WRSR command and are non−volatile. The user is
allowed to protect a quarter, one half or the entire memory,
by setting these bits according to Table 9. The protected
blocks then become read−only.
The WPEN (Write Protect Enable) bit acts as an enable for
the WP pin. Hardware write protection is enabled when the
WP pin is low and the WPEN bit is 1. This condition
prevents writing to the status register and to the block
protected sections of memory. While hardware write
protection is active, only the non−block protected memory
can be written. Hardware write protection is disabled when
the WP pin is high or the WPEN bit is 0. The WPEN bit, WP
pin and WEL bit combine to either permit or inhibit Write
operations, as detailed in Table 10.
The IPL (Identification Page Latch) bit determines
whether the additional Identification Page (IPL = 1) or main
memory array (IPL = 0) can be accessed both for Read and
Write operations. The IPL bit is set by the user with the
WRSR command and is volatile. The IPL bit is
automatically reset after read/write operations.
The LIP (Lock Identification Page) bit is set by the user
with the WRSR command and is non−volatile. When set to
1, the Identification Page is permanently write protected
(locked in Read−only mode).
Note: The IPL and LIP bits cannot be set to 1 using the same
WRSR instruction. If the user attempts to set (“1”) both the
IPL and LIP bit in the same time, these bits cannot be written
and therefore they will remain unchanged.
Table 8. STATUS REGISTER
7
6
5
4
3
2
1
0
WPEN
IPL
0
LIP
BP1
BP0
WEL
RDY
Table 9. BLOCK PROTECTION BITS
Status Register Bits
BP1
BP0
0
0
None
No Protection
0
1
C000−FFFF
Quarter Array Protection
1
0
8000−FFFF
Half Array Protection
1
1
0000−FFFF
Full Array Protection
Array Address Protected
Protection
Table 10. WRITE PROTECT CONDITIONS
WPEN
WP
WEL
Protected Blocks
Unprotected Blocks
Status Register
0
X
0
Protected
Protected
Protected
0
X
1
Protected
Writable
Writable
1
Low
0
Protected
Protected
Protected
1
Low
1
Protected
Writable
Protected
X
High
0
Protected
Protected
Protected
X
High
1
Protected
Writable
Writable
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5
CAV25512
WRITE OPERATIONS
Write Enable and Write Disable
The CAV25512 device powers up into a write disable
state. The device contains a Write Enable Latch (WEL)
which must be set before attempting to write to the memory
array or to the status register. In addition, the address of the
memory location(s) to be written must be outside the
protected area, as defined by BP0 and BP1 bits from the
status register.
The internal Write Enable Latch and the corresponding
Status Register WEL bit are set by sending the WREN
instruction to the CAV25512. Care must be taken to take the
CS input high after the WREN instruction, as otherwise the
Write Enable Latch will not be properly set. WREN timing
is illustrated in Figure 3. The WREN instruction must be
sent prior to any WRITE or WRSR instruction.
The internal write enable latch is reset by sending the
WRDI instruction as shown in Figure 4. Disabling write
operations by resetting the WEL bit, will protect the device
against inadvertent writes.
CS
SCK
SI
0
0
0
0
0
1
1
0
HIGH IMPEDANCE
SO
Dashed Line = mode (1, 1)
Figure 3. WREN Timing
CS
SCK
SI
0
0
0
0
0
1
0
HIGH IMPEDANCE
SO
Dashed Line = mode (1, 1)
Figure 4. WRDI Timing
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6
0
CAV25512
Byte Write
Following completion of the write cycle, the CAV25512 is
automatically returned to the write disable state.
Once the WEL bit is set, the user may execute a write
sequence, by sending a WRITE instruction, a 16−bit address
and a data byte as shown in Figure 5. Internal programming
will start after the low to high CS transition. During an
internal write cycle, all commands, except for RDSR (Read
Status Register) will be ignored. The RDY bit will indicate
if the internal write cycle is in progress (RDY high), or the
device is ready to accept commands (RDY low).
Write Identification Page
The additional 128−byte Identification Page (IP) can be
written with user data using the same Write commands
sequence as used for Page Write to the main memory array
(Figure 6). The IPL bit from the Status Register must be set
(IPL = 1) using the WRSR instruction, before attempting
to write to the IP.
The address bits [A15:A7] are Don’t Care and the
[A6:A0] bits define the byte address within the
Identification Page. In addition, the Byte Address must point
to a location outside the protected area defined by the BP1,
BP0 bits from the Status Register. When the full memory
array is write protected (BP1, BP0 = 1,1), the write
instruction to the IP is not accepted and not executed.
Also, the write to the IP is not accepted if the LIP bit from
the Status Register is set to 1 (the page is locked in
Read−only mode).
Page Write
After sending the first data byte to the CAV25512, the host
may continue sending data, up to a total of 128 bytes,
according to timing shown in Figure 6. After each data byte,
the lower order address bits are automatically incremented,
while the higher order address bits (page address) remain
unchanged. If during this process the end of page is
exceeded, then loading will “roll over” to the first byte in the
page, thus possibly overwriting previously loaded data.
Table 11. BYTE ADDRESS
Device
Address Significant Bits
# Address Clock Pulses
Main Memory Array
A15 − A0
16
Identification Page
A6 − A0
16
CS
0
1
2
3
4
5
6
7
21
8
22 23
24
25
26 27
28
29
30 31
SCK
OPCODE
SI
0
0
0
0
0
0
DATA IN
BYTE ADDRESS*
1
0
A0 D7 D6 D5 D4 D3 D2 D1 D0
AN
HIGH IMPEDANCE
SO
* Please check the Byte Address Table (Table 11)
Dashed Line = mode (1, 1)
Figure 5. Byte WRITE Timing
CS
0
1
2
3
4
5
6
7
8
21
SCK
0
0
0
0
0
0
23 24−31 32−39 24+(N−1)x8−1 .. 24+(N−1)x8
24+Nx8−1
BYTE ADDRESS*
OPCODE
SI
22
1
0
AN
DATA IN
A0
Data Byte N
7..1
0
Data Data Data
Byte 1 Byte 2 Byte 3
HIGH IMPEDANCE
SO
Dashed Line = mode (1, 1)
* Please check the Byte Address Table (Table 11)
Figure 6. Page WRITE Timing
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7
CAV25512
Write Status Register
Write Protection
The Status Register is written by sending a WRSR
instruction according to timing shown in Figure 7. Only bits
2, 3, 4, 6 and 7 can be written using the WRSR command.
The Write Protect (WP) pin can be used to protect the
Block Protect bits BP0 and BP1 against being inadvertently
altered. When WP is low and the WPEN bit is set to “1”,
write operations to the Status Register are inhibited. WP
going low while CS is still low will interrupt a write to the
status register. If the internal write cycle has already been
initiated, WP going low will have no effect on any write
operation to the Status Register. The WP pin function is
blocked when the WPEN bit is set to “0”. The WP input
timing is shown in Figure 8.
CS
0
1
2
3
4
5
6
7
8
9
10
11
1
7
6
5
4
12
13
14
15
2
1
0
SCK
OPCODE
SI
0
0
0
0
0
DATA IN
0
0
MSB
HIGH IMPEDANCE
SO
Dashed Line = mode (1, 1)
Figure 7. WRSR Timing
tWPS
tWPH
CS
SCK
WP
WP
Dashed Line = mode (1, 1)
Figure 8. WP Timing
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8
3
CAV25512
READ OPERATIONS
Read from Memory Array
SO pin. If the CS continues to be held low, the internal
address register defined by [A6:A0] bits is automatically
incremented and the next data byte from the IP is shifted out.
The byte address must not exceed the 128−byte page
boundary.
To read from memory, the host sends a READ instruction
followed by a 16−bit address.
After receiving the last address bit, the CAV25512 will
respond by shifting out data on the SO pin (as shown in
Figure 9). Sequentially stored data can be read out by simply
continuing to run the clock. The internal address pointer is
automatically incremented to the next higher address as data
is shifted out. After reaching the highest memory address,
the address counter “rolls over” to the lowest memory
address, and the read cycle can be continued indefinitely.
The read operation is terminated by taking CS high.
Read Status Register
To read the status register, the host simply sends a RDSR
command. After receiving the last bit of the command, the
CAV25512 will shift out the contents of the status register on
the SO pin (Figure 10). The status register may be read at
any time, including during an internal write cycle.
While the internal write cycle is in progress, the RDSR
command will output the full content of the status register.
For easy detection of the internal write cycle completion,
both during writing to the memory array and to the status
register, we recommend sampling the RDY bit only through
the polling routine. After detecting the RDY bit ”0”, the next
RDSR instruction will always output the expected content
of the status register.
Read Identification Page
Reading the additional 128−byte Identification Page (IP)
is achieved using the same Read command sequence as used
for Read from main memory array (Figure 9). The IPL bit
from the Status Register must be set (IPL = 1) before
attempting to read from the IP. The [A6:A0] are the address
significant bits that point to the data byte shifted out on the
CS
0
1
2
3
4
5
6
7
8
20 21
10
9
22 23
24
25
26 27
28 29
30
SCK
OPCODE
SI
0
0
0
0
0
0
BYTE ADDRESS*
1
1
A0
AN
DATA OUT
HIGH IMPEDANCE
SO
7
Dashed Line = mode (1, 1)
* Please check the Byte Address Table (Table 11)
6
5
4
3
2
1
0
MSB
Figure 9. READ Timing
CS
0
1
2
3
4
5
6
7
1
0
1
8
9
10
11
7
6
5
4
12
13
14
2
1
SCK
OPCODE
SI
SO
0
0
0
0
0
DATA OUT
HIGH IMPEDANCE
MSB
Dashed Line = mode (1, 1)
Figure 10. RDSR Timing
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9
3
0
CAV25512
Hold Operation
below the POR trigger level. This bi−directional POR
behavior protects the device against ‘brown−out’ failure
following a temporary loss of power.
The CAV25512 device powers up in a write disable state
and in a low power standby mode. A WREN instruction
must be issued prior to any writes to the device.
After power up, the CS pin must be brought low to enter
a ready state and receive an instruction. After a successful
byte/page write or status register write, the device goes into
a write disable mode. The CS input must be set high after the
proper number of clock cycles to start the internal write
cycle. Access to the memory array during an internal write
cycle is ignored and programming is continued. Any invalid
op−code will be ignored and the serial output pin (SO) will
remain in the high impedance state.
The HOLD input can be used to pause communication
between host and CAV25512. To pause, HOLD must be
taken low while SCK is low (Figure 11). During the hold
condition the device must remain selected (CS low). During
the pause, the data output pin (SO) is tri−stated (high
impedance) and SI transitions are ignored. To resume
communication, HOLD must be taken high while SCK is low.
Design Considerations
The CAV25512 device incorporates Power−On Reset
(POR) circuitry which protects the internal logic against
powering up in the wrong state. The device will power up
into Standby mode after VCC exceeds the POR trigger level
and will power down into Reset mode when VCC drops
CS
tCD
tCD
SCK
tHD
tHD
HOLD
tHZ
HIGH IMPEDANCE
SO
tLZ
Dashed Line = mode (1, 1)
Figure 11. HOLD Timing
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10
CAV25512
PACKAGE DIMENSIONS
SOIC 8, 150 mils
CASE 751BD
ISSUE O
E1
E
SYMBOL
MIN
A
1.35
1.75
A1
0.10
0.25
b
0.33
0.51
c
0.19
0.25
D
4.80
5.00
E
5.80
6.20
E1
3.80
4.00
MAX
1.27 BSC
e
PIN # 1
IDENTIFICATION
NOM
h
0.25
0.50
L
0.40
1.27
θ
0º
8º
TOP VIEW
D
h
A1
θ
A
c
e
b
L
END VIEW
SIDE VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MS-012.
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CAV25512
PACKAGE DIMENSIONS
TSSOP8, 4.4x3
CASE 948AL
ISSUE O
b
SYMBOL
MIN
NOM
1.20
A
E1
E
MAX
A1
0.05
A2
0.80
b
0.19
0.15
0.90
1.05
0.30
c
0.09
D
2.90
3.00
0.20
3.10
E
6.30
6.40
6.50
E1
4.30
4.40
4.50
e
0.65 BSC
L
1.00 REF
L1
0.50
θ
0º
0.60
0.75
8º
e
TOP VIEW
D
A2
c
q1
A
A1
L1
SIDE VIEW
L
END VIEW
Notes:
(1) All dimensions are in millimeters. Angles in degrees.
(2) Complies with JEDEC MO-153.
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12
CAV25512
PACKAGE DIMENSIONS
WLCSP8, 1.36x1.99
CASE 567MB
ISSUE O
ÈÈ
ÈÈ
PIN A1
REFERENCE
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. COPLANARITY APPLIES TO SPHERICAL
CROWNS OF SOLDER BALLS.
4. DIMENSION b IS MEASURED AT THE MAXIMUM
BALL DIAMETER PARALLEL TO DATUM C.
A B
D
0.03 C
2X
0.03 C
2X
DIM
A
A1
A2
b
D
E
e
e1
TOP VIEW
A2
0.10 C
MILLIMETERS
MIN
MAX
−−−
0.60
0.16
0.22
0.35 REF
0.22
0.32
1.36 BSC
1.99 BSC
0.50 BSC
0.433 BSC
A
RECOMMENDED
SOLDERING FOOTPRINT*
0.05 C
NOTE 3
A1
C
SIDE VIEW
SEATING
PLANE
A1
PACKAGE
OUTLINE
e/2
8X
e
b
e1
0.05 C A B
0.03 C
NOTE 4
C
0.433
PITCH
B
8X
A
0.50
PITCH
1 2 3 4 5
BOTTOM VIEW
0.25
PITCH
0.27
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
13
CAV25512
ORDERING INFORMATION
Device Order Number
Specific
Device
Marking
CAV25512VE−GT3
Package Type
Temperature Range
Lead Finish
Shipping (Note 11)
25512A
SOIC−8,
JEDEC
−40°C to +125°C
NiPdAu
Tape & Reel, 3,000 Units / Reel
CAV25512YE−GT3
S12A
TSSOP−8
−40°C to +125°C
NiPdAu
Tape & Reel, 3,000 Units / Reel
CAV25512C8ATR
(Note 12)
S12A
WLCSP−8
−40°C to +125°C
SnAgCu
Tape & Reel, 5,000 Units / Reel
9. For additional package and temperature options, please contact your nearest ON Semiconductor Sales office.
10. For detailed information and a breakdown of device nomenclature and numbering systems, please see the ON Semiconductor Device
Nomenclature document, TND310/D, available at www.onsemi.com
11. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
12. Preliminary. Please contact factory for availability.
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14
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
CAV25512/D