CM1248-04QG Low Capacitance Transient Voltage Suppressors / ESD Protectors Features http://onsemi.com • Low I/O Capacitance at 10 pF at 0 V • In−System ESD Protection to ±15 kV Contact Discharge, • • • per the IEC 61000−4−2 International Standard Compact SMT Package Saves Board Space and Facilitates Layout in Space−Critical Applications Each I/O Pin Can Withstand over 1000 ESD Strikes These Devices are Pb−Free and are RoHS Compliant UDFN−6 QG SUFFIX CASE 517BM BLOCK DIAGRAM CM1248−04QG Pin 6 VN Pin 4 Pin 1 VN Pin 3 MARKING DIAGRAM LR LR = Specific Device Code ORDERING INFORMATION Device Package Shipping† CM1248−04QG uDFN−0.4 mm 3000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011 February, 2011 − Rev. 4 1 Publication Order Number: CM1248−04QG/D CM1248−04QG PACKAGE / PINOUT DIAGRAMS Top View Pin 1 Pin 6 Pin 2 Pin 5 Pin 3 Pin 4 6−Lead uDFN (.4 mm) CM1248−04QG Table 1. PIN DESCRIPTIONS Pins Name (Refer to package / pinout diagrams) CHx (Refer to package / pinout diagrams) VN Description The cathode of the respective TVS diode, which should be connected to the node requiring transient voltage protection. The anode of the TVS diodes. SPECIFICATIONS Table 2. ABSOLUTE MAXIMUM RATINGS Parameter Storage Temperature Range Rating Units −65 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 3. STANDARD OPERATING CONDITIONS Parameter Operating Temperature Rating Units −40 to +85 °C Table 4. ELECTRICAL OPERATING CHARACTERISTICS (Note 1) Symbol CIN Parameter Conditions Channel Input Capacitance TA = 25°C, 0 VDC, 1 MHz; Note 2 0 VDC, 1 MHz; Note 1 Typ Max 10 7 Units pF 15 Differential Channel I/O to GND Capacitance TA = 25°C, 2.5 VDC, 1 MHz; Note 2 VRSO Reverse Stand−off Voltage IR = 10 mA, TA = 25°C 5.5 V IR = 1 mA, TA = 25°C 6.1 V ILEAK Leakage Current VSIG Small Signal Clamp Voltage Positive Clamp Negative Clamp I = 10 mA, TA = 25°C I = −10 mA, TA = 25°C VESD ESD Withstand Voltage Contact Discharge per IEC 61000−4−2 standard TA = 25°C (Notes 2, 4 and 5) Diode Dynamic Resistance Forward Conduction Reverse Conduction TA = 25°C (Notes 2 and 3) 0.19 pF DCIN RD 1. 2. 3. 4. 5. Min pF VIN = 5.0 VDC, TA = 25°C 0.25 mA VIN = 5.0 VDC, Note 1 0.75 mA 6.8 −0.89 http://onsemi.com 2 kV ±15 All parameters specified at TA = −40°C to +85°C unless otherwise noted. These parameters guaranteed by design and characterization. Human Body Model per MIL−STD−883, Method 3015, CDischarge = 100 pF, RDischarge = 1.5 KW, VN grounded. Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VN grounded. These measurements performed with no external capacitor on PinX. V 0.57 1.36 W CM1248−04QG PERFORMANCE INFORMATION Diode Capacitance Typical diode capacitance with respect to positive TVS cathode voltage (reverse voltage across the diode) is given in Diode Capacitance vs. Reverse Voltage. Figure 1. Diode Capacitance vs. Reverse Voltage Typical High Current Diode Characteristics Measurements are made in pulsed mode with a nominal pulse width of 0.7 ms. Figure 2. Typical Input VI Characteristics (Pulse−mode Measurements, Pulse Width = 0.7 ms nominal) http://onsemi.com 3 CM1248−04QG PACKAGE DIMENSIONS UDFN6, 1.25x1, 0.4P CASE 517BM−01 ISSUE O PIN ONE REFERENCE 2X ÉÉ ÉÉ L1 E 0.10 C 2X DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS 0.10 C ÉÉÉ ÉÉÉ ÇÇÇ TOP VIEW EXPOSED Cu DETAIL B (A3) 0.10 C A1 SIDE VIEW DETAIL A C 6X 1 6 MOLD CMPD ÉÉ ÉÉ ÇÇ A3 DIM A A1 A3 b D E e L L1 A1 DETAIL B A 0.08 C NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L A B D SEATING PLANE ALTERNATE CONSTRUCTIONS MILLIMETERS MIN MAX 0.45 0.55 0.00 0.05 0.15 REF 0.15 0.25 1.25 BSC 1.00 BSC 0.40 BSC 0.20 0.40 −−− 0.15 L 3 RECOMMENDED SOLDERING FOOTPRINT* 4 6X 6X b e 6X 0.25 0.53 0.10 C A B 0.05 C NOTE 3 1.30 BOTTOM VIEW PACKAGE OUTLINE 1 0.40 PITCH DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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