4-Channel Low Capacitance Transient Voltage Suppressor / ESD Protector

CM1218-C4
Low Capacitance Transient
Voltage Suppressors
/ ESD Protectors
Description
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The CM1218−C4 device features transient voltage suppressor
arrays that provide a very high level of protection for sensitive
electronic components which may be subjected to electrostatic
discharge (ESD).
All pins of the CM1218−C4 are rated to withstand ±15 kV ESD
pulses using the IEC 61000−4−2 contact discharge method. Using the
MIL−STD−883D (Method 3015) specification for Human Body
Model (HBM) ESD, all pins are protected from contact discharges of
greater than ±30 kV.
The CM1218−C4 is supplied in an SOT−553, RoHS−compliant,
lead−free finished package.
SOT−553
SE SUFFIX
CASE 463B
BLOCK DIAGRAM
• Low I/O Capacitance at 7 pF Typical
• Four Channels of ESD Protection
• In−system ESD Protection to ±15 kV Contact Discharge, per the
•
•
•
1
IEC 61000−4−2 International Standard
Compact SMT Package Saves Board Space and Facilitates Layout in
Space−critical Applications
Each I/O Pin Can Withstand over 1000 ESD Strikes
These Devices are Pb−Free and are RoHS Compliant
• High−speed Consumer Electronic Ports
• ESD Protection of PC Ports, Including USB Ports, Serial Ports,
Parallel Ports, IEEE1394 Ports, Docking Ports, Proprietary Ports, etc.
Protection of Interface Ports or IC Pins which are Exposed to High
ESD Levels
2
VN
3
CM1218−C4
MARKING DIAGRAM
Applications
•
4
5
Features*
R4C M G
R4C = Specific Device Code
M
= Month Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
CM1218−C4SE
Package
Shipping†
SOT−553
(Pb−Free)
5000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*For Other Versions of the CM1218, see the CM1218 datasheet
or the CM1218−H4 datasheet.
© Semiconductor Components Industries, LLC, 2011
February, 2011 − Rev. 3
1
Publication Order Number:
CM1218−C4/D
CM1218−C4
PACKAGE / PINOUT DIAGRAM & PIN DESCRIPTIONS
Top View
1
VN
2
CH2
3
5
CH4
R4C
CH1
4
R4C
CHx
CH3
5−lead SOT−553
(CM1218−C4SE)
= Specific Device Code
= The Cathode of the Respective TVS Diode, which
should be connected to the node requiring transient
voltage protection
= The Anode of the TVS Diodes
VN
SPECIFICATIONS
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameter
Storage Temperature Range
Package Power Dissipation SOT−553
Rating
Units
−65 to +150
°C
0.15
W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Table 2. STANDARD OPERATING CONDITIONS
Parameter
Operating Temperature
Rating
Units
−40 to +85
°C
Table 3. ELECTRICAL OPERATING CHARACTERISTICS
Symbol
CIN
Parameter
Conditions
Min
Typ
Max
Units
Channel Input Capacitance
TA = 25°C, 2.5 VDC, 1 MHz
7
pF
DCIN
Differential Channel I/O to GND Capacitance
TA = 25°C, 2.5 VDC, 1 MHz
0.19
pF
VRSO
Reverse Stand−off Voltage
IR = 10 mA, TA = 25°C
5.5
V
IR = 1 mA, TA = 25°C
6.1
V
ILEAK
Leakage Current
VIN = 5.0 VDC, TA = 25°C
VSIG
Small Signal Clamp Voltage
Positive Clamp
Negative Clamp
I = 10 mA, TA = 25°C
I = −10 mA, TA = 25°C
ESD Withstand Voltage
Contact Discharge per IEC 61000−4−2 standard
Human Body Model, MIL−STD−883, Method 3015
TA = 25°C; Notes 2 & 3
TA = 25°C; Notes 1 & 3
VESD
RD
Diode Dynamic Resistance
Forward Conduction
Reverse Conduction
1
6.8
−0.8
mA
V
kV
±15
±30
TA = 25°C; Note 1
0.57
1.36
1 Human Body Model per MIL−STD−883, Method 3015, CDischarge = 100 pF, RDischarge = 1.5 KW, VN grounded.
2 Standard IEC 61000−4−2 with CDischarge = 150 pF, RDischarge = 330 W, VN grounded.
3 These measurements performed with no external capacitor on CHX.
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2
W
CM1218−C4
Performance Information
Diode Capacitance
Typical diode capacitance with respect to positive TVS cathode voltage (reverse voltage across the diode) is given in
Figure 1.Diode Capacitance vs. Reverse Voltage.
Figure 1. Diode Capacitance vs. Reverse Voltage
Typical High Current Diode Characteristics
Measurements are made in pulsed mode with a nominal pulse width of 0.7 ms.
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3
CM1218−C4
MECHANICAL SPECIFICATIONS
The CM1218−C4SE is supplied in a 5−pin SOT−553 package. Dimensions are presented below.
Table 4. CSP TAPE AND REEL SPECIFICATIONS
Pocket Size (mm)
Tape Width
Part Number
Chip Size (mm)
B0 X A0 X K0
W
Reel Diameter
Qty per
Reel
P0
P1
CM1218−C4SE
1.60 X 1.60 X 0.55
1.78 X 1.78 X 0.69
8 mm
178 mm (7″)
5000
4 mm
4 mm
Po
Top
Cover
Tape
Ao
+
Ko
For Tape Feeder Reference
Only Including Draft,
Concerning around B.
10 Pitches Cumulative
Tolerance On Tape
±0.2 mm
Embossment
Bo
+
P1
User Direction of Feed
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4
+
Center Lines
of Cavity
W
CM1218−C4
PACKAGE DIMENSIONS
SOT−553, 5 LEAD
CASE 463B−01
ISSUE B
D
−X−
5
A
4
1
2
b
e
L
E
−Y−
3
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS
OF BASE MATERIAL.
HE
DIM
A
b
c
D
E
e
L
HE
c
5 PL
0.08 (0.003)
M
X Y
SOLDERING FOOTPRINT*
0.3
0.0118
INCHES
NOM
0.022
0.009
0.005
0.063
0.047
0.020 BSC
0.004
0.008
0.059
0.063
MIN
0.020
0.007
0.003
0.059
0.043
MAX
0.024
0.011
0.007
0.067
0.051
0.012
0.067
STYLE 2:
PIN 1. CATHODE
2. COMMON ANODE
3. CATHODE 2
4. CATHODE 3
5. CATHODE 4
0.45
0.0177
1.35
0.0531
MILLIMETERS
NOM
MAX
0.55
0.60
0.22
0.27
0.13
0.18
1.60
1.70
1.20
1.30
0.50 BSC
0.10
0.20
0.30
1.50
1.60
1.70
MIN
0.50
0.17
0.08
1.50
1.10
1.0
0.0394
0.5
0.5
0.0197 0.0197
SCALE 20:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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CM1218−C4/D