ESD9L, SESD9L Series Transient Voltage Suppressors ESD Protection Diodes with Ultra−Low Capacitance The ESD9L Series is designed to protect voltage sensitive components that require ultra−low capacitance from ESD and transient voltage events. Excellent clamping capability, low capacitance, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its low capacitance, it is suited for use in high frequency designs such as USB 2.0 high speed and antenna line applications. http://onsemi.com 1 2 PIN 1. CATHODE 2. ANODE Specification Features: • Ultra Low Capacitance 0.5 pF • Low Clamping Voltage • Small Body Outline Dimensions: • • • • • • • 2 1 0.039″ x 0.024″ (1.00 mm x 0.60 mm) Low Body Height: 0.016″ (0.4 mm) Stand−off Voltage: 3.3 V, 5 V Low Leakage Response Time is Typically < 1.0 ns IEC61000−4−2 Level 4 ESD Protection S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable This is a Pb−Free Device Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic SOD−923 CASE 514AB MARKING DIAGRAM 1 *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING INFORMATION QUALIFIED MAX REFLOW TEMPERATURE: 260°C Device Package Shipping† ESD9LxxxST5G SOD−923 (Pb−Free) 8000/Tape & Reel SESD9LxxxST5G SOD−923 (Pb−Free) 8000/Tape & Reel Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating 2 X = Specific Device Code M = Date Code Epoxy Meets UL 94 V−0 LEAD FINISH: 100% Matte Sn (Tin) MOUNTING POSITION: Any IEC 61000−4−2 (ESD) XM Symbol Contact Air Value Unit ±10 ±15 kV Total Power Dissipation on FR−5 Board (Note 1) @ TA = 25°C °PD° 150 mW Storage Temperature Range Tstg −55 to +150 °C Junction Temperature Range TJ −55 to +150 °C Lead Solder Temperature − Maximum (10 Second Duration) TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 x 0.75 x 0.62 in. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics tables starting on page 2 of this data sheet. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2012 October, 2012 − Rev. 5 1 Publication Order Number: ESD9L/D ESD9L, SESD9L Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol I Parameter IF IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM IR VBR Working Peak Reverse Voltage Breakdown Voltage @ IT IT Test Current IF Forward Current VF Forward Voltage @ IF Ppk Peak Power Dissipation C VC VBR VRWM Maximum Reverse Leakage Current @ VRWM V IR VF IT IPP Uni−Directional TVS Max. Capacitance @ VR = 0 and f = 1.0 MHz *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.0 V Max. @ IF = 10 mA for all types) VRWM (V) IR (mA) @ VRWM VBR (V) @ IT (Note 2) IT C (pF) VC (V) @ IPP = 1 A VC Per IEC61000−4−2 (Note 4) Device* Device Marking Max Max Min mA Typ Max Max ESD9L3.3ST5G 6** 3.3 1.0 4.8 1.0 0.5 0.9 9.0 Figures 1 and 2 See Below ESD9L5.0ST5G D 5.0 1.0 5.4 1.0 0.5 0.9 9.8 Figures 1 and 2 See Below * Include S-prefix devices where applicable. **Rotated 180°. 2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C. 3. Surge current waveform per Figure 5. 4. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 http://onsemi.com 2 ESD9L, SESD9L Series IEC61000−4−2 Waveform IEC 61000−4−2 Spec. Ipeak Level Test Voltage (kV) First Peak Current (A) Current at 30 ns (A) Current at 60 ns (A) 1 2 7.5 4 2 2 4 15 8 4 3 6 22.5 12 6 4 8 30 16 8 100% 90% I @ 30 ns I @ 60 ns 10% tP = 0.7 ns to 1 ns Figure 3. IEC61000−4−2 Spec ESD Gun Oscilloscope TVS 50 W Cable 50 W Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger % OF PEAK PULSE CURRENT 100 PEAK VALUE IRSM @ 8 ms tr 90 PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms 80 70 60 HALF VALUE IRSM/2 @ 20 ms 50 40 30 tP 20 10 0 0 20 40 t, TIME (ms) 60 Figure 5. 8 X 20 ms Pulse Waveform http://onsemi.com 3 80 ESD9L, SESD9L Series PACKAGE DIMENSIONS SOD−923 CASE 514AB ISSUE B D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E 1 b 2 2X 0.08 (0.0032) X Y DIM A b c D E HE L A c L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.05 0.10 0.15 MIN 0.013 0.006 0.003 0.030 0.022 0.037 0.002 INCHES NOM 0.015 0.008 0.005 0.031 0.024 0.039 0.004 MAX 0.016 0.010 0.007 0.033 0.026 0.041 0.006 SOLDERING FOOTPRINT* 0.90 0.40 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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