EFC3C001NUZ D

EFC3C001NUZ
Power MOSFET
for 1-2 Cells Lithium-ion Battery Protection
20V, 30mΩ, 6A, Dual N-Channel
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This Power MOSFET features a low on-state resistance. This device is
suitable for applications such as power switches of portable machines. Best
suited for 1-2 cells lithium-ion battery applications.
VSSS
Features
 2.5V drive
 Common-Drain type
 ESD Diode-Protected Gate
 Pb-Free, Halogen Free and RoHS compliance
20V
RSS(on) Max
30mΩ@ 4.5V
34mΩ@ 3.8V
39mΩ@ 3.1V
ELECTRICAL CONNECTION
N-Channel
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
Source Current (DC)
Source Current (Pulse)
PW100s, duty cycle1%
Total Dissipation (Note 2)
Junction Temperature
Storage Temperature
6A
56mΩ@ 2.5V
Applications
 1-2 Cells Lithium-ion Battery Charging and Discharging Switch
Parameter
Source to Source Voltage
Gate to Source Voltage
IS Max
Symbol
VSSS
VGSS
IS
Value
ISP
PT
Tj
Tstg
20
10
6
Unit
V
V
A
60
A
1.6
W
150
55 to +150
C
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
4
Rg
3
Rg
2
1
Rg=500
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient (Note 2)
Symbol
Value
RJA
78.1
Unit
C/W
MARKING
2
Note 2 : Surface mounted on ceramic substrate(5000mm  0.8mm).
WLCSP4, 1.26×1.26 /
EFCP1313-4DG-020
wc
LOT No.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
June 2016 - Rev. 0
1
Publication Order Number :
EFC3C001NUZ/D
EFC3C001NUZ
ELECTRICAL CHARACTERISTICS at Ta  25C (Note 3)
Parameter
Source to Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate to Source Leakage Current
Gate Threshold Voltage
Symbol
Value
Conditions
min
V(BR)SSS
ISSS
IS=1mA, VGS=0V
Test Circuit 1
VSS=20V, VGS=0V
Test Circuit 1
IGSS
VGS(th)
RSS(on)1
VGS=8V, VSS=0V
VSS=10V, IS=1mA
Test Circuit 3
0.5
IS=2A, VGS=4.5V
Test Circuit 4
17
19.5
typ
max
20
Unit
V
Test Circuit 2
1
A
1
A
1.3
V
23
30
m
26
34
m
Static Source to Source On-State
Resistance
RSS(on)2
RSS(on)3
IS=2A, VGS=3.8V
Test Circuit 4
IS=2A, VGS=3.1V
Test Circuit 4
21
28
39
m
IS=2A, VGS=2.5V
Test Circuit 4
24.5
35
56
m
Turn-ON Delay Time
Rise Time
RSS(on)4
td(on)
tr
Turn-OFF Delay Time
td(off)
Fall Time
tf
Total Gate Charge
Qg
VSS=10V, VGS=4.5V, IS=6A Test Circuit 6
Forward Source to Source Voltage
VF(S-S)
IS=2A, VGS=0V
50
VSS=10V, VGS=4.5V, IS=2A Test Circuit 5
Test Circuit 7
ns
350
ns
42,000
ns
47,000
ns
15
0.81
nC
1.2
V
Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
EFC3C001NUZ
Test circuits are example of measuring FET1 side
Test Circuit 2
IGSS
Test Circuit 1
VSSS / ISSS
S2
S2
G2
G2
A
G1
VSS
G1
A
VGS
S1
S1
Test Circuit 3
VGS(th)
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
Test Circuit 4
RSS(on)
S2
S2
IS
G2
G2
A
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
V
G1
VGS
G1
VSS
VGS
S1
S1
Test Circuit 5
td(on), tr, td(off), tf
Test Circuit 6
Qg
S2
S2
RL
A
G2
G2
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
V
IG =1mA
G1
G1
S1
VSS
S1
PG
PG
Test Circuit 7
VF(S-S)
S2
IS
G2
V
VGS=0V
G1
S1
RL
When FET1 is
measured,+4.5V is added to
VGS of FET2.
When FET2 is measured, the position of FET1 and FET2 is switched.
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3
VSS
When FET1 is measured,
Gate and Source of FET2
are short-circuited.
EFC3C001NUZ
IS -- VSS
9
8
Source Current, IS -- A
3 .1 V
4.0
3.5
.3V
3.0
1
2.5
2.0
1.5
6
5
4
3
VGS=1.0V
0.5
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
--25
C
2
1.0
0
7
1
0
1.0
0
0.5
Source to Source Voltage, VSS -- V
50
40
30
20
10
0
2
4
6
8
50
40
30
20
=2A
, IS
V
8
3.
=
V GS
10
0
--60
10
--40
--20
IS -- VF(S-S)
Switching Time, SW Time -- ns
2
1.0
7
5
3
2
Ta=7
5C
25C
--25
C
Source Current, IS -- A
3
3
0
0.2
0.4
0.6
0.8
1.0
10
7
5
3
2
Source Current, IS -- A
Gate to Source Voltage, VGS -- V
100
7
5
3
2
2.5
2.0
1.5
td(on)
0.1
7
5
3
2
0.5
6
8
10
12
140
160
2
3
VSS=10V
VGS=4.5V
5
14
7 0.1
2
3
5
7 1.0
2
3
5
7 10
16
SOA
10
ISP=60A (PW100s)
0
s
1m
IS=6A
s
10
m
10 s
DC 0ms
op
era
tio
n
Operation in this area
is limited by RSS(on).
1.0
7
5
3
2
1.0
4
120
Source Current, IS -- A
3.0
2
100
tr
100
7
5
3
2
10
0.01
VGS -- Qg
0
80
tf
1000
7
5
3
2
3.5
0
60
10000
7
5
3
2
1.2
VSS=10V
IS=6A
4.0
40
td(off)
Forward Source to Source Voltage, VF(S-S) -- V
4.5
20
SW Time -- IS
100000
7
5
3
2
2
0.01
0
Ambient Temperature, Ta -- C
VGS=0V
0.1
7
5
2.5
=2A
, IS
V
5
=2.
=2A
V GS
V, I S
1
.
=3
V GS
2A
, I S=
4.5V
=
VGS
60
Gate to Source Voltage, VGS -- V
10
7
5
2.0
70
Static Source to Source
On-State Resistance, RSS(on) -- m
Static Source to Source
On-State Resistance, RSS(on) -- m
60
0
1.5
RSS(on) -- Ta
80
Ta=25C
IS=2A
70
1.0
Gate to Source Voltage, VGS -- V
RSS(on) -- VGS
80
25C
3 .8 V
4.5
2.5V
Source Current, IS -- A
5.0
Ta=25C
VSS=10V
Ta=7
5C
10V
5.5
IS -- VGS
10
4.5V
6.0
Ta=25C
Single pulse
Surface mounted on ceramic substrate
(5000mm20.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
Source to Source Voltage, VSS -- V
Total Gate Charge, Qg -- nC
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4
5 7 100
EFC3C001NUZ
PT -- Ta
1.8
Surface mounted on ceramic substrate
(5000mm20.8mm)
Total Dissipation, PT -- W
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Thermal Resistance, RJA -- ºC/W
Ambient Temperature, Ta -- C
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
0.01
0.000001
RJA -- Pulse Time
Duty Cycle=0.5
0.2
0.1
0.05
0.02
0.01
lse
le Pu
Sing
2
3
5
7 0.00001 2
Surface mounted on ceramic substrate
(5000mm20.8mm)
3
5
7 0.0001
2
3
5
7 0.001
2
3
5
7 0.01
Pulse Time, PT -- s
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5
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5
7 10
EFC3C001NUZ
PACKAGE DIMENSIONS
unit : mm
WLCSP4 1.26x1.26 / EFCP1313-4DG-020
CASE 567LM
ISSUE O
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
B
DIM
A
b
D
E
e
E
PIN 1
REFERENCE
MILLIMETERS
MIN
MAX
0.22
0.18
0.22
0.28
1.21
1.31
1.21
1.31
0.50 BSC
TOP VIEW
A
0.03 C
0.03 C
C
SIDE VIEW
4X
0.10
M
b
C A B
2
1 : Source1
e
2 : Gate1
4X
3 : Gate2
A1
0.50
PITCH
4 : Source2
4
PACKAGE
OUTLINE
0.50
PITCH
e
1
RECOMMENDED
SOLDERING FOOTPRINT*
SEATING
PLANE
0.25
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
3
BOTTOM VIEW
ORDERING INFORMATION
Device
EFC3C001NUZTCG
Marking
WC
Package
WLCSP4, 1.26 1.26 /
EFCP1313-4DG-020
(Pb-Free / Halogen Free)
Shipping (Qty / Packing)
5,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
Note on usage : Since the EFC3C001NUZ is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects. Please contact sales for use except the designated application.
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