EFC4612R Ordering number : ENA1477A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET EFC4612R General-Purpose Switching Device Applications Features • • • • 2.5V drive. Built-in gate protection resistor. Best suited for LiB charging and discharging switch. Common-drain type. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current (DC) Source Current (Pulse) Total Dissipation Symbol Conditions Ratings VSSS VGSS IS ISP Channel Temperature PT Tch Storage Temperature Tstg Unit 24 V ±12 V 6 A PW≤10μs, duty cycle≤1% 60 A When mounted on ceramic substrate (5000mm2×0.8mm) 1.6 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min Source-to-Source Breakdown Voltage V(BR)SSS ISSS IS=1mA, VGS=0V VSS=20V, VGS=0V Test Circuit 1 Zero-Gate Voltage Source Current Gate-to-Source Leakage Current IGSS VGS=±8V, VSS=0V Test Circuit 2 Cutoff Voltage VGS(off) Test Circuit 3 Forward Transfer Admittance | yfs | VSS=10V, IS=1mA VSS=10V, IS=3A typ 24 V Test Circuit 1 Test Circuit 4 Marking : FN Unit max 0.5 1 μA ±10 μA 1.3 3.1 V S Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. http://semicon.sanyo.com/en/network 10511 TKIM/O0709PF TKIM TC-00001996 No. A1477-1/5 EFC4612R Continued from preceding page. Parameter Symbol RSS(on)1 Ratings Conditions min typ Unit max IS=3A, VGS=4.5V IS=3A, VGS=4.0V Test Circuit 5 24 39 45 mΩ RSS(on)2 Test Circuit 5 25 41 48 mΩ RSS(on)3 IS=3A, VGS=3.7V Test Circuit 5 27.5 43 50 mΩ RSS(on)4 IS=3A, VGS=3.1V Test Circuit 5 31.5 48 57 mΩ RSS(on)5 IS=3A, VGS=2.5V Test Circuit 5 33.5 58 72 mΩ Turn-ON Delay Time td(on) See specified Test Circuit. Test Circuit 7 20 ns Rise Time tr See specified Test Circuit. Test Circuit 7 230 ns Turn-OFF Delay Time td(off) See specified Test Circuit. Test Circuit 7 130 ns Fall Time tf See specified Test Circuit. Test Circuit 7 210 ns Total Gate Charge Qg VSS=10V, VGS=4.5V, IS=6A 7 nC Forward Source-to-Source Voltage VF(S-S) IS=3A, VGS=0V Static Source-to-Source On-State Resistance Package Dimensions 0.8 Test Circuit 6 1.2 V Electrical Connection unit : mm (typ) 7064-001 1 1.26 4 3 Rg 1.26 2 Rg 2 3 0.15 0.22 1 Rg=200Ω 4 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 0.65 2 1 : Source1 2 : Gate1 3 : Gate2 4 : Source2 0.65 1 4 3 0.3 SANYO : EFCP1313-4CC-037 No. A1477-2/5 EFC4612R Test circuits are example of measuring FET1 side Test Circuit 1 VSSS / ISSS Test Circuit 2 IGSS(+) / (--) S2 S2 G2 G2 G1 G1 S1 S1 IT11565 Test Circuit 3 VGS(off) IT11566 Test Circuit 4 | yfs | S2 S2 G2 G2 10V 1mA G1 G1 S1 S1 IT11567 Test Circuit 5 RSS(on) IT11568 Test Circuit 6 VF(S-S) S2 S2 4.5V G2 G2 G1 G1 S1 S1 IT11569 IT11570 Test Circuit 7 td(on), tr, td(off), tf VDD=10V IS=3A RL=3.33Ω V S2 OUT VIN G2 PW=10μs D.C.≤1% G1 S1 * Note: Connect the mesurement terminal reversely if you want to measure the FET2 side. No. A1477-3/5 EFC4612R IS -- VSS VSS=10V 5 3.5 V GS=1.5V 3.0 2.5 2.0 1.5 4 3 2 1 1.0 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-to-Source Voltage, VSS -- V Static Source-to-Source On-State Resistance, RSS(on) -- mΩ 100 80 60 40 20 0 2 4 6 8 IS -- VF(S-S) 0.01 0 0.2 0.4 0.6 0.8 1.0 Forward Source-to-Source Voltage, VF(S-S) -- V VGS -- Qg 2.5 2.0 1.5 1.0 0.5 1 2 3 4 3A .0V, I S= V GS=4 --40 --20 0 20 40 5 Total Gate Charge, Qg -- nC 6 7 IT14686 60 80 100 120 140 5 160 IT14683 SW Time -- IS VSS=10V VGS=4.5V 3 td(off) 2 tf 100 7 tr 5 3 td(on) 2 2 3 5 7 0.1 2 3 2 5 7 1.0 3 100 7 5 3 2 10 7 5 3 2 ISP=60A PW≤10μs 10 0μ s 1m s IS=6A 1.0 7 5 3 2 0.1 7 5 3 2 5 7 10 IT14685 ASO 2 3.0 0 20 Source Current, IS -- A 3.5 0 40 IT14684 VSS=10V IS=6A 4.0 60 10 0.01 1.2 Source Current, IS -- A Gate-to-Source Voltage, VGS -- V 4.5 =3A V, I S =2.5 =3A S VG V, I S =3.1 VGS A , I S=3 =4.5V VGS Ambient Temperature, Ta -- °C Switching Time, SW Time -- ns Ta=7 5°C 25°C --25°C Source Current, IS -- A 3 2 3 2 =3.7 VGS 80 7 1.0 7 5 2.0 IT14681 =3A V, I S 100 1000 3 2 1.5 120 IT14682 VGS=0V 0.1 7 5 1.0 RSS(on) -- Ta 0 --60 10 Gate-to-Source Voltage, VGS -- V 10 7 5 0.5 Gate-to-Source Voltage, VGS -- V 140 Ta=25°C IS=3A 120 0 0 IT14720 RSS(on) -- VGS 140 0 2.0 Static Source-to-Source On-State Resistance, RSS(on) -- mΩ 0 25°C --25°C 4.0 Ta=7 5°C 4.5 Source Current, IS -- A Source Current, IS -- A 5.0 4.0V 3.1V 5.5 IS -- VGS 6 2.5V 10.0V 4.5V 6.0 10 ms 1 DC 00m op s era tio n Operation in this area is limited by RSS(on). Ta=25°C Single pulse When mounted on ceramic substrate (5000mm2×0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Source-to-Source Voltage, VSS -- V 2 3 5 IT14721 No. A1477-4/5 EFC4612R PT -- Ta 1.8 When mounted on ceramic substrate (5000mm2×0.8mm) Total Dissipation, PT -- W 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14722 Note on usage : Since the EFC4612R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of January, 2011. Specifications and information herein are subject to change without notice. PS No. A1477-5/5