EFC4C002NL Power MOSFET for 3-Cells Lithium-ion Battery Protection 30V, 2.6mΩ, 30A, Dual N-Channel, WLCSP8 www.onsemi.com This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications of DRONE or NOTEBOOK PC. VSSS Features Ultra Low On-Resistance Low Gate Charge Common-Drain type Pb-Free, Halogen Free and RoHS compliance 30V Applications 3-Cells Lithium-ion Battery Charging and Discharging Switch 6, 8 RSS(on) Max 2.6mΩ@ 10V 3.3mΩ@ 8V Symbol VSSS VGSS IS 30A 5.1mΩ@ 4.5V ELECTRICAL CONNECTION N-Channel 7 SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1, 2) Parameter Source to Source Voltage Gate to Source Voltage IS Max 4, 5 Value 30 20 30 Unit V V A Source Current (DC) Source Current (Pulse) A ISP 120 PW10s, duty cycle1% P Total Dissipation (Note 2) 2.6 W T Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PIN ASSIGNMENT Pin1:S1 Pin3:S1 Pin4:D Pin2:G1 Pin6:S2 Pin8:S2 THERMAL RESISTANCE RATINGS Parameter Symbol Value Junction to Ambient (Note 2) RJA 48 2 Note 2 : Surface mounted on ceramic substrate(5000mm 0.8mm). 2 1, 3 1. Source 1 2. Gate 1 3. Source 1 4. Drain 5. Drain 6. Source 2 7. Gate 2 8. Source 2 Pin7:G2 Unit C/W Pin5:D BOTTOM VIEW MARKING DIAGRAM 4C2 AAYWWZ 4C2 AA Y WW Z = = = = = Specific Device Code Assembly Location Year Work Week Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2016 April 2016 - Rev. 0 1 Publication Order Number : EFC4C002NL/D EFC4C002NL ELECTRICAL CHARACTERISTICS at Ta 25C (Note 3) Parameter Source to Source Breakdown Voltage Zero-Gate Voltage Source Current Gate to Source Leakage Current Gate Threshold Voltage Forward Transconductance Symbol min max Test Circuit 1 VSS=24V, VGS=0V Test Circuit 1 IGSS VGS(th) gFS VGS=20V, VSS=0V VSS=10V, IS=1mA Test Circuit 3 VSS=10V, IS=10A Test Circuit 4 VGS=10V, IS=10A Test Circuit 5 1.5 2.0 2.6 m VGS=8V, IS=10A Test Circuit 5 1.6 2.1 3.3 m VGS=4.5V, IS=10A Test Circuit 5 2.2 2.9 5.1 m Static Drain to Source On-State Resistance RDS(on) 30 Unit IS=1mA, VGS=0V RSS(on) V Test Circuit 2 VGS=10V, IS=1A Rise Time RG td(on) tr Turn-OFF Delay Time td(off) Fall Time tf Input Capacitance Ciss VSS=15V, VGS=0V, f=1MHz Total Gate Charge Qg VSS=15V, VGS=4.5V, IS=15A Test Circuit 7 Turn-ON Delay Time typ V(BR)SSS ISSS Static Source to Source On-State Resistance Gate Resistance Value Conditions VSS=15V, VGS=10V, IS=10A Test Circuit 6 1.3 1 A 200 nA 2.2 16 10 V S m 3 40 ns 750 ns 280 ns 105 ns 6,200 pF 45 nC Forward Source to Source Voltage IS=10A, VGS=0V Test Circuit 8 0.75 1.2 V VF(S-S) Note 3 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 EFC4C002NL Test circuits are example of measuring FET1 side Test Circuit 2 IGSS Test Circuit 1 VSSS / ISSS S2 S2 G2 G2 A G1 VSS G1 A VGS S1 S1 Test Circuit 3 VGS(th) When FET1 is measured, Gate and Source of FET2 are short-circuited. Test Circuit 4 gFS S2 S2 G2 G2 A A When FET1 is measured, Gate and Source of FET2 are short-circuited. VGS VSS G1 VSS G1 VGS S1 S1 Test Circuit 6 td(on), tr, td(off), tf Test Circuit 5 RSS(on) S2 S2 IS RL G2 G2 V V G1 G1 VGS When FET1 is measured, Gate and Source of FET2 are short-circuited. VSS S1 S1 When FET1 is measured, Gate and Source of FET2 are short-circuited. PG Test Circuit 8 VF(S-S) Test Circuit 7 Qg S2 S2 IS A When FET1 is measured, Gate and Source of FET2 are short-circuited. G2 G2 V IG =1mA G1 VGS=0V RL S1 S1 PG G1 VSS When FET2 is measured, the position of FET1 and FET2 is switched. www.onsemi.com 3 When FET1 is measured,+10V is added to VGS of FET2. EFC4C002NL www.onsemi.com 4 EFC4C002NL www.onsemi.com 5 EFC4C002NL PACKAGE DIMENSIONS unit : mm WLCSP8, 6.00x2.50 / EFCP6025-8EGJ-021 CASE 567MC ISSUE O D A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. B DIM A b b1 D D1 D2 E e e1 L E PIN A1 REFERENCE 0.05 C 2X 0.05 C 2X TOP VIEW A C SIDE VIEW SEATING PLANE b 4X e e 0.05 D1 1 D2 2 3 4 MILLIMETERS MIN MAX 0.19 0.23 0.22 0.28 0.32 0.38 5.95 6.05 0.305 BSC 1.740 BSC 2.45 2.55 1.375 BSC 1.25 BSC 1.97 2.03 M C A B e1/2 e1 b1 C A B 4X 0.05 M 8 4X 0.05 M 1 : Source1 2 : Gate1 3 : Source1 4 : Drain 5 : Drain 6 : Source2 7 : Gate2 8 : Source2 L 7 6 5 RECOMMENDED SOLDERING FOOTPRINT* PACKAGE OUTLINE 4X 1.375 C A B 1.375 1.74 0.25 BOTTOM VIEW 1.25 4X 0.35 1 4X 2.00 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ORDERING INFORMATION Device EFC4C002NLTDG Marking 4C2 Package WLCSP8, 6.00 2.50 EFCP6025-8EGJ-021 (Pb-Free / Halogen Free) Shipping (Qty / Packing) 5,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the EFC4C002NL is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Please contact sales for use except the designated application. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. 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