MBR1100
Axial Lead Rectifier
These rectifiers employ the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlap
contact. Ideally suited for use as rectifiers in low−voltage,
high−frequency inverters, free wheeling diodes, and polarity
protection diodes.
SCHOTTKY
BARRIER RECTIFIER
1.0 AMPERE, 100 VOLTS
Features
•
•
•
•
•
•
•
•
•
www.onsemi.com
Low Reverse Current
Low Stored Charge, Majority Carrier Conduction
Low Power Loss/High Efficiency
Highly Stable Oxide Passivated Junction
Guard−Ring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
High Surge Capacity
These Devices are Pb−Free and are RoHS Compliant
DO−41
AXIAL LEAD
CASE 59
STYLE 1
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
•
MARKING DIAGRAM
260°C Max. for 10 Seconds
Polarity: Cathode Indicated by Polarity Band
A
MBR1100
YYWW G
G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
(VR(equiv) ≤ 0.2 VR (dc), RqJA = 50°C/W,
P.C. Board Mounting, [see Note 3], TA = 120°C)
IO
1.0
A
Peak Repetitive Forward Current
(VR(equiv) ≤ 0.2 VR (dc), RqJA = 50°C/W,
P.C. Board Mounting, [see Note 3], TA = 110°C)
IFRM
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Operating and Storage Junction Temperature
Range (Note 1)
Voltage Rate of Change (Rated VR)
ORDERING INFORMATION
50
A
TJ, Tstg
−65 to
+175
°C
dv/dt
10
V/ns
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
© Semiconductor Components Industries, LLC, 2016
February, 2016 − Rev. 7
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
1
Package
Shipping†
MBR1100G
Axial Lead
(Pb−Free)
1000 Units/Bag
MBR1100RLG
Axial Lead
(Pb−Free)
5000/Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MBR1100/D
MBR1100
THERMAL CHARACTERISTICS (See Note 4)
Characteristic
Symbol
Max
Unit
RqJA
See Note 3
°C/W
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted)
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 1 A, TL = 25°C)
(iF = 1 A, TL = 100°C)
VF
Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2)
(TL = 25°C)
(TL = 100°C)
iR
mA
0.5
5.0
Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
20
1K
400
200
100
40
20
10
10
TJ = 150°C
5.0
IR , REVERSE CURRENT ( mA)
i F, INSTANTANEOUS FORWARD CURRENT (AMPS)
2.
V
0.79
0.69
100°C
2.0
25°C
1.0
0.5
0.2
0.1
0.05
TJ = 150°C
125°C
100°C
4.0
2.0
1.0
0.4
0.2
0.1
0.04
0.02
0.01
0.02
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4
0
10
20
30
40
50
60
70
90
80
vF, INSTANTANEOUS VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Typical Reverse Current {
100
4.0
3.0
dc
2.0
SQUARE WAVE
1.0
0
0
20
40
60
80
100
120
140
160
180
200
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
IF(AV) , AVERAGE FORWARD CURRENT (AMPS)
{ The curves shown are typical for the highest voltage
device in the voltage grouping. Typical reverse current for
lower voltage selections can be estimated from these
same curves if VR is sufficiently below rated VR.
4.0
3.0
SQUARE WAVE
dc
2.0
1.0
0
0
1.0
2.0
3.0
4.0
TA, AMBIENT TEMPERATURE (°C)
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Current Derating
(Mounting Method 3 per Note 3)
Figure 4. Power Dissipation
www.onsemi.com
2
5.0
MBR1100
NOTE 4 — THERMAL CIRCUIT MODEL:
(For heat conduction through the leads)
150
C, CAPACITANCE (pF)
100
90
80
70
60
50
RqS(A)
RqL(A)
RqJ(A)
TA(A)
TJ = 25°C
fTEST = 1 MHz
RqL(K)
RqJ(K)
RqS(K)
TA(K)
PD
TL(A)
TC(A)
TJ
TC(K)
TL(K)
40
30
Use of the above model permits junction to lead thermal
resistance for any mounting configuration to be found. For
a given total lead length, lowest values occur when one side
of the rectifier is brought as close as possible to the heat sink.
Terms in the model signify:
20
15
0
10
30
20
40
50
60
70
80
90
100
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
TA = Ambient Temperature TC = Case Temperature
TL = Lead Temperature
TJ = Junction Temperature
RqS = Thermal Resistance, Heat Sink to Ambient
RqL = Thermal Resistance, Lead to Heat Sink
RqJ = Thermal Resistance, Junction to Case
PD = Power Dissipation
NOTE 3 — MOUNTING DATA:
Data shown for thermal resistance junction−to−ambient
(RqJA) for the mounting shown is to be used as a typical
guideline values for preliminary engineering or in case the
tie point temperature cannot be measured.
(Subscripts A and K refer to anode and cathode sides,
respectively.) Values for thermal resistance components are:
RqL = 100°C/W/in typically and 120°C/W/in maximum.
RqJ = 36°C/W typically and 46°C/W maximum.
Typical Values for RqJA in Still Air
Lead Length, L (in)
Mounting
Method
1/8
1/4
1/2
3/4
1
52
65
72
85
°C/W
2
67
80
87
100
°C/W
3
—
L
Mounting Method 2
L
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction
diode forward and reverse recovery transients due to
minority carrier injection and stored charge. Satisfactory
circuit analysis work may be performed by using a model
consisting of an ideal diode in parallel with a variable
capacitance. (See Figure 5)
Rectification efficiency measurements show that
operation will be satisfactory up to several megahertz. For
example, relative waveform rectification efficiency is
approximately 70 percent at 2 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction
diodes, the loss in waveform efficiency is not indicative of
power loss: it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
Mounting Method 3
ÉÉ
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ ÉÉ
ÉÉÉÉÉÉÉÉ
ÉÉÉÉÉÉÉÉ
L
NOTE 5 — HIGH FREQUENCY OPERATION:
°C/W
50
Mounting Method 1
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
RqJA
P.C. Board with
1−1/2″ x 1−1/2″
copper surface.
L = 3/8″
BOARD GROUND
PLANE
L
www.onsemi.com
3
MBR1100
PACKAGE DIMENSIONS
AXIAL LEAD
CASE 59−10
ISSUE U
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO−41 OUTLINE SHALL APPLY
4. POLARITY DENOTED BY CATHODE BAND.
5. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
B
K
D
DIM
A
B
D
F
K
F
A
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
INCHES
MIN
MAX
0.161 0.205
0.079 0.106
0.028 0.034
−−− 0.050
1.000
−−−
MILLIMETERS
MIN
MAX
4.10
5.20
2.00
2.70
0.71
0.86
−−−
1.27
25.40
−−−
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
F
K
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
4
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
MBR1100/D