MBR150, MBR160 MBR160 is a Preferred Device Axial Lead Rectifiers The MBR150/160 series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes. Features • • • • • http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE − 50 AND 60 VOLTS Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction These are Pb−Free Devices* Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead Temperature for Soldering Purposes: • 260°C Max. for 10 Seconds Polarity: Cathode Indicated by Polarity Band DO−41 AXIAL LEAD CASE 59 STYLE 1 MAXIMUM RATINGS Rating Symbol Peak Repetitive Reverse Voltage MBR150 MBR160 Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Value Unit VRRM V 50 60 MARKING DIAGRAM VRWM VR MBR150 MBR160 Average Rectified Forward Current (Note 1) (VR(equiv) v 0.2 VR(dc), TL = 90°C, RqJA = 80°C/W, P.C. Board Mounting, TA = 55°C) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz, TL = 70°C) Operating and Storage Junction Temperature Range (Reverse Voltage Applied) VR(RMS) 35 42 V IO 1.0 A IFSM 25 (for one cycle) A TJ, Tstg − 65 to +150 °C THERMAL CHARACTERISTICS (Notes 1 and 2) Characteristic Thermal Resistance, Junction−to−Ambient Symbol Max Unit RqJA 80 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Lead Temperature reference is cathode lead 1/32″ from case. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. A MBR1x0 YYWW G G A = Assembly Location MBR1x0 = Device Code x = 5 or 6 Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 June, 2006 − Rev. 8 1 Preferred devices are recommended choices for future use and best overall value. Publication Order Number: MBR150/D MBR150, MBR160 ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) (Note 1) Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 2) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 2) (TL = 25°C) (TL = 100°C) iR Unit V 0.550 0.750 1.000 10 mA 0.5 5.0 10 TJ = 150°C 5.0 TJ = 150°C 100°C I R , REVERSE CURRENT (mA) 7.0 25°C 5.0 3.0 2.0 1.0 125°C 2.0 1.0 100°C 0.5 0.2 0.1 75°C 0.05 0.02 0.01 25°C 0.005 0.002 0.001 0.7 0 10 20 30 40 50 VR, REVERSE VOLTAGE (VOLTS) 0.5 60 70 Figure 2. Typical Reverse Current* *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if VR is sufficiently below rated VR. 0.3 0.2 5.0 0.1 PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) Max 0.07 0.05 0.03 0.02 0 SQUARE WAVE 4.0 3.0 dc p 2.0 5 10 IPK/IAV = 20 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1.0 2.0 3.0 4.0 vF, INSTANTANEOUS VOLTAGE (VOLTS) IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 1. Typical Forward Voltage Figure 3. Forward Power Dissipation http://onsemi.com 2 5.0 MBR150, MBR160 THERMAL CHARACTERISTICS r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 ZqJL(t) = ZqJL • r(t) 0.2 Ppk Ppk tp 0.1 TIME 0.07 0.05 t1 DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. DTJL = Ppk • RqJL [D + (1 − D) • r(t1 + tp) + r(tp) − r(t1)] where DTJL = the increase in junction temperature above the lead temperature r(t) = normalized value of transient thermal resistance at time, t, from Figure 4, i.e.: r(t) = r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1k 2k 5k 10 k 90 100 t, TIME (ms) Figure 4. Thermal Response . 90 200 BOTH LEADS TO HEATSINK, EQUAL LENGTH TJ = 25°C f = 1 MHz 70 C, CAPACITANCE (pF) R qJL , THERMAL RESISTANCE, JUNCTION−TO−LEAD (° C/W) 80 60 MAXIMUM 50 TYPICAL 40 30 100 80 70 60 50 40 30 20 10 20 1/8 0 1/4 3/8 1/2 5/8 3/4 7/8 1.0 0 10 20 30 40 50 60 70 80 L, LEAD LENGTH (INCHES) VR, REVERSE VOLTAGE (VOLTS) Figure 5. Steady−State Thermal Resistance Figure 6. Typical Capacitance NOTE 1. — MOUNTING DATA: NOTE 2. — THERMAL CIRCUIT MODEL: (For heat conduction through the leads) Data shown for thermal resistance junction−to−ambient (RqJA) for the mounting shown is to be used as a typical guideline values for preliminary engineering or in case the tie point temperature cannot be measured. RqS(A) TA(A) Lead Length, L (in) 1/8 1/4 1/2 3/4 1 52 65 72 85 °C/W 2 67 80 87 100 °C/W 3 — RqL(K) RqJ(K RqS(K) RqJA °C/W http://onsemi.com 3 TA(K) PD TL(A) Mounting Method RqJ(A) ) Typical Values for RqJA in Still Air 50 RqL(A) TC(A) TJ TC(K) TL(K) MBR150, MBR160 Use of the above model permits junction to lead thermal resistance for any mounting configuration to be found. For a given total lead length, lowest values occur when one side of the rectifier is brought as close as possible to the heatsink. Terms in the model signify: (Subscripts A and K refer to anode and cathode sides, respectively.) Values for thermal resistance components are: RqL = 100°C/W/in typically and 120°C/W/in maximum. RqJ = 36°C/W typically and 46°C/W maximum. TA = Ambient Temperature TC = Case Temperature TL = Lead Temperature TJ = Junction Temperature RqS = Thermal Resistance, Heatsink−to−Ambient RqL = Thermal Resistance, Lead−to−Heatsink RqJ = Thermal Resistance, Junction−to−Case PD = Power Dissipation Since current flow in a Schottky rectifier is the result of majority carrier conduction, it is not subject to junction diode forward and reverse recovery transients due to minority carrier injection and stored charge. Satisfactory circuit analysis work may be performed by using a model consisting of an ideal diode in parallel with a variable capacitance. (See Figure 6) Rectification efficiency measurements show that operation will be satisfactory up to several megahertz. For example, relative waveform rectification efficiency is approximately 70 percent at 2 MHz, e.g., the ratio of dc power to RMS power in the load is 0.28 at this frequency, whereas perfect rectification would yield 0.406 for sine wave inputs. However, in contrast to ordinary junction diodes, the loss in waveform efficiency is not indicative of power loss: it is simply a result of reverse current flow through the diode capacitance, which lowers the dc output voltage. Mounting Method 3 Mounting Method 1 P.C. Board with 1−1/2″ x 1−1/2″ copper surface. É É ÉÉÉÉÉÉÉÉ É É É ÉÉÉÉÉÉÉÉ L L Mounting Method 2 L NOTE 3. — HIGH FREQUENCY OPERATION: P.C. Board with 1−1/2″ x 1−1/2″ copper surface. L = 3/8″ BOARD GROUND PLANE L VECTOR PIN MOUNTING ORDERING INFORMATION Package Shipping † MBR150 Axial Lead* 1000 Units / Bag MBR150G Axial Lead* 1000 Units / Bag MBR150RL Axial Lead* 5000 / Tape & Reel MBR150RLG Axial Lead* 5000 / Tape & Reel MBR160 Axial Lead* 1000 Units / Bag MBR160G Axial Lead* 1000 Units / Bag MBR160RL Axial Lead* 5000 / Tape & Reel MBR160RLG Axial Lead* 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 4 MBR150, MBR160 PACKAGE DIMENSIONS AXIAL LEAD CASE 59−10 ISSUE U NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO−41 OUTLINE SHALL APPLY 4. POLARITY DENOTED BY CATHODE BAND. 5. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. B K D DIM A B D F K F A POLARITY INDICATOR OPTIONAL AS NEEDED (SEE STYLES) INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 −−− 0.050 1.000 −−− MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 −−− 1.27 25.40 −−− STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE F K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBR150/D