BAS16H, SBAS16H Switching Diode Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 CATHODE MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 100 Vdc Peak Forward Current IF 200 mAdc IFSM(surge) 500 mAdc Repetitive Peak Forward Current (Note 2) IFRM 1.0 A Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 10 ms t = 100 ms t = 1 ms t=1s IFSM Non−Repetitive Peak Forward Surge Current, 60 Hz www.onsemi.com 2 ANODE 2 1 SOD−323 CASE 477 STYLE 1 A MARKING DIAGRAM 36.0 18.0 6.0 3.0 0.7 A6 M Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A6 M = Specific Device Code = Date Code THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW 1.57 mW/°C RqJA 635 °C/W TJ, Tstg −55 to 150 °C ORDERING INFORMATION Device 1. FR-4 Minimum Pad. 2. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, TJ = 25°C prior to surge. Package Shipping† BAS16HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel SBAS16HT1G SOD−323 (Pb−Free) 3000 /T ape & Reel BAS16HT3G SOD−323 (Pb−Free) 10000 / Tape & Reel SBAS16HT3G SOD−323 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 April, 2016 − Rev. 12 1 Publication Order Number: BAS16HT1/D BAS16H, SBAS16H ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max − − − 1.0 50 30 100 − − − − − 715 855 1000 1250 Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 100 Vdc) (VR = 75 Vdc, TJ = 150°C) (VR = 25 Vdc, TJ = 150°C) mAdc IR Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) Vdc Forward Voltage (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 2.0 pF Forward Recovery Voltage (IF = 10 mAdc, tr = 20 ns) VFR − 1.75 Vdc Reverse Recovery Time (IF = IR = 10 mAdc, RL = 50 W) trr − 6.0 ns Stored Charge (IF = 10 mAdc to VR = 5.0 Vdc, RL = 500 W) QS − 45 pC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 BAS16H, SBAS16H 820 W +10 V 2.0 k IF 100 mH tr 0.1 mF tp IF t trr 10% t 0.1 mF 90% D.U.T. 50 W INPUT SAMPLING OSCILLOSCOPE 50 W OUTPUT PULSE GENERATOR iR(REC) = 1.0 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 100 IR , REVERSE CURRENT (μA) IF, FORWARD CURRENT (mA) TA = 150°C TA = 85°C 10 TA = -40°C 1.0 TA = 25°C TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.001 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (V) 0 1.2 Figure 2. Forward Voltage 10 20 30 40 VR, REVERSE VOLTAGE (V) Figure 3. Leakage Current 40 0.68 Based on square wave currents TJ = 25°C prior to surge 35 0.64 30 25 IFSM (A) CD, DIODE CAPACITANCE (pF) 50 0.60 20 15 0.56 10 5 0.52 0 2 4 6 0 0.0001 8 0.001 0.01 0.1 1 VR, REVERSE VOLTAGE (V) Tp (mSec) Figure 4. Capacitance Figure 5. Maximum Non−repetitive Peak Forward Current as a Function of Pulse Duration, Typical Values www.onsemi.com 3 10 BAS16H, SBAS16H PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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