BAS16H

WILLAS
FM120-M+
THRU
BAS16H
FM1200-M
200mA Surface Mount Switching Diode - 75V
1.0A SURFACE MOUNT SCHOTTKY
BARRIERPackage
RECTIFIERS -20V- 200V
SOD-323
Pb Free Produc
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
• Low profile surface mounted application in order to
optimize board space.
FEATURE
• Low power loss, high efficiency.
Small plastic SMD package.
ƽ
• High current capability, low forward voltage drop.
reverse voltage: max. 75 V.
ƽ
High surge capability.
• Continuous
High-speed
switching
in hybrid
thick and thin-film circuits.
ƽ
overvoltage
protection.
• Guardring for
high-speed
switching.
• Ultra
ƽ
We declare that the material of product
epitaxial
planar
chip,requirements.
metal silicon junction.
• Silicon
compliance
with
RoHS
ƽ
meet environmental
standards of
• Lead-free
Moisture parts
Sensitivity
Level 1
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
MIL-STD-19500
/228
Color band
denotes cathode end
ƽ Polarity:
• RoHS product for packing code suffix "G"
DEVICE MARKING AND ORDERING INFORMATION
Halogen free product for packing code suffix "H"
Device
Mechanical
data
Marking
Shipping
SOD -323
0.040(1.0)
0.024(0.6)
3000/Tape&Reel
Epoxy : UL94-V0 rated flameA6
retardant
•BAS16H
Molded plastic, SOD-123H
• Case :RATINGS
MAXIMUM
,
• Terminals
:Plated terminals, solderable per MIL-STD-750
Rating
Symbol
Value
Method 2026
Continuous Reverse Voltage
•
Polarity
:
Indicated
Peak Forward Current by cathode band
: Any
• Mounting
Peak
ForwardPosition
Surge Current
V R
IF
I FM(surge)
0.031(0.8) Typ.
0.031(0.8) Typ.
2
Unit
ANODE
Vdc
mAdc Dimensions in inches and (millimeters)
mAdc
75
200
500
1
CATHODE
• WeightCHARACTERISTICS
: Approximated 0.011 gram
THERMAL
Characteristic
Symbol
Max
Unit
MAXIMUM RATINGS AND ELECTRICAL
CHARACTERISTICS
Total Device Dissipation FR-5 Board,*
PD
200
mW
Ratings at 25℃ ambient temperature unless otherwise specified.
TA = 25°C
SingleDerate
phase above
half wave,
25°C60Hz, resistive of inductive load.
1.57
mW/°C
For capacitive load, derate current by 20%
Thermal Resistance Junction to Ambient
R θJA
635
°C/W
FM130-MH
FM140-MH FM150-MH
FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
RATINGS
-55to+150
Operating/Junction
and Storage Temperature SYMBOL
T J , TFM120-MH
stg
°C
Marking**FR-4
Code
12
13
14
15
16
18
10
115
120
Minimum Pad
20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
ELECTRICAL CHARACTERISTICS (T A = 25°C
unless otherwise noted)
14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Characteristic
Maximum DC Blocking Voltage
VDC
Maximum Average Forward Rectified Current
IO
IFSM
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
Peak Forward
(V RSurge
= 75Current
Vdc) 8.3 ms single half sine-wave
superimposed
loadT(JEDEC
method)
J = 150°C)
(V Ron
= rated
75 Vdc,
(V R = Resistance
25 Vdc, T J(Note
= 150°C)
Typical Thermal
2)
RΘJA
CJ
Typical Junction
Capacitance
(Note
1)
Reverse
Breakdown
Voltage
TJ
Operating(ITemperature
Range
BR = 100 µAdc)
Storage Temperature Range
TSTG
Forward Voltage
(I F = 1.0 mAdc)
CHARACTERISTICS
(I F = 10 mAdc)
(I F = 50 mAdc)
Maximum Average Reverse Current at @T A=25℃
(I F = 150 mAdc)
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
@T A=125℃
Reverse Recovery Time
(I F = I R = 10 mAdc, R L = 50 Ω)
Stored Charge
(I F = 10 mAdc to V R = 5.0 Vdc, R L = 500 Ω)
2013-07
Symbol
30
40
Min
50
Max
60
1.0
1.030
50
IR
V (BR)
-55 to +125
—
—
—
75
Unit
80
100
150
200
µAdc
30 40
—120
Vdc
-55 to +150
- 65 to +175
V F
mV
—
715
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
—
855
0.9
0.92
VF
0.50
0.70
0.85
—
1000
0.5
—
1250
IR
10
CD
—
2.0
pF
Diode Capacitance
NOTES: (V R = 0, f = 1.0 MHz)
1- Measured
at 1 MHZ
and applied
reverse voltage of 4.0 VDC.
Forward
Recovery
Voltage
= 10 mAdc,
t rJunction
= 20 ns)
(I FResistance
2- Thermal
From
to Ambient
2012-06
20
V FR
—
1.75
Vdc
t rr
—
4.0
ns
QS
—
45
pC
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAS16H
FM1200-M
200mA Surface Mount Switching Diode - 75V
1.0A SURFACE MOUNT SCHOTTKY
BARRIERPackage
RECTIFIERS -20V- 200V
SOD-323
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
mounted application in order to
• Low profile surface
2.0 k
board space.
820 Ω
+10 optimize
V
• Low power loss, high efficiency.
• High current capability, low forward voltage
0.1µF drop.
IF
100 µH
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
0.1 µF
DU
T silicon junction.
planar chip,
metal
• Silicon epitaxial
50 Ω OUTPUT
50 Ω INPUT
parts meet environmental standards
of
• Lead-free
PULSE
SAMPLING
MIL-STD-19500
/228
GENERATOR
OSCILLOSCOPE V
• RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
tp
tr
IF
t
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
t rr
10%
t
0.071(1.8)
0.056(1.4)
90%
i
IR
INPUT SIGNAL
R(REC)
= 1.0 mA
OUTPUT PULSE
(I F = I R = 10 mA; MEASURED
at i R(REC) = 1.0 mA)
R
Mechanical data
0.040(1.0)
0.024(0.6)
1. A 2.0
kΩ variable resistor adjusted for a Forward Current (I F ) of 10mA.
rated flame
retardant
• Epoxy : UL94-V0 Notes:
Notes:
2.
Input
pulse
• Case : Molded plastic, SOD-123H is adjusted so I R(peak) is equal to 10mA.
0.031(0.8) Typ.
Notes: 3. t » t rr
,
• Terminals :Plated terminals,p solderable
per MIL-STD-750
0.031(0.8) Typ.
Method 2026
Figure 1. Recovery Time Equivalent Test Circuit
• Polarity : Indicated by cathode band
• Mounting Position : Any
TYPICAL CHARACTERISTICS
• Weight : Approximated 0.011 gram
100
10
RATINGS
Maximum1.0
Recurrent Peak Reverse Voltage
VRRM
12
20
Maximum RMS Voltage
VRMS
14
Maximum DC Blocking Voltage
VDC
20
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
IFSM
V F ,(JEDEC
FORWARD
VOLTAGE (VOLTS)
superimposed on rated load
method)
Maximum Average Forward Rectified Current
0.1
0.2
0.4
0.6
0.8
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
0.68
C D , DIODE CAPACITANCE (pF)
Storage Temperature Range
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
NOTES:
0.1
13
30
14
40
15
50
210.01
28
35
30
40
50
16
60
18
80
42
60
T A = 55°C
10
100
115
150
120
200
56
70
105
140
80
100
150
200
T A = 25°C
1.0
0
10
20
30
40
30
V R , REVERSE VOLTAGE (VOLTS)
40
Figure 3. Leakage
Current
120
-55 to +150
-55 to +125
- 65 to +175
TSTG
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
0.64
VF
Maximum Average Reverse Current at @T A=25℃
T A = 125°C
1.0
0.001
1.2
Figure
2. Forward VoltageRΘJA
Typical Thermal Resistance
(Note 2)
T A = 150°C
= 85°C
T AFM160-MH
FM180-MH FM1100-MH FM1150-MH FM1200-M
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH
T A = 25°C
Marking Code
I R , REVERSE CURRENT ( A)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
T A = 85°C
Single phase half wave, 60Hz, resistive of inductiveTload.
A = –40°C
10
For capacitive
load, derate current by 20%
I F , FORWARD CURRENT (mA)
Dimensions in inches and (millimeters)
0.50
0.70
IR
@T0.60
A=125℃
0.85
0.9
0.5
0.92
10
1- Measured at 1 MHZ and applied reverse voltage
0.56 of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.52
0
2
4
6
8
V R , REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2012-06
2013-07
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
THRU
BAS16H
FM1200-M
200mA Surface Mount Switching Diode - 75V
1.0A SURFACE MOUNT SCHOTTKY
BARRIERPackage
RECTIFIERS -20V- 200V
SOD-323
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
SOD-123H
Outline Drawing
SOD-323
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency.
• High current capability, low forward voltage drop.
• High surge capability.
• Guardring for overvoltage protection.
• Ultra high-speed switching.
• Silicon epitaxial planar chip, metal silicon junction.
• Lead-free parts meet environmental standards of
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.075(1.90)
.059(1.50)
.045(1.15)
.091(2.30)
Mechanical data
.010(0.25)
.016(0.40)
•
.057(1.45)
.106(2.70)
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.040(1.0)
0.024(0.6)
.043(1.10)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
.031(0.80)
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
.004(0.10)MAX.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
VRRM
12
20
13
30
Maximum RMS Voltage
VRMS
14
21
28
Maximum DC Blocking Voltage
VDC
20
30
40
Maximum Average Forward Rectified Current
IO
IFSM
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
RΘJA
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
CJ
Operating Temperature Range
TJ
Storage Temperature Range
15
50
16
60
18
80
35
42
50
60
CHARACTERISTICS
10
100
115
150
120
200
56
70
105
140
80
100
150
200
1.0
30
.008(0.20)
.004(0.10)
40
120
-55 to +125
-55 to +150
- 65 to +175
TSTG
.016(0.40)
0.50
.010(0.25)
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
VF
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
14
40
@T A=125℃
IR
0.70
0.85
0.9
0.5
0.92
10
NOTES:
.010(0.25)MIN.
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
2013-07
WILLAS ELECTRONIC
Rev.C COR
WILLAS ELECTRONIC CORP.
WILLAS
FM120-M+
200mA Surface Mount Switching Diode - 75V
1.0A SURFACE MOUNT SCHOTTKY
BARRIER
RECTIFIERS -20V- 200V
SOD-323
Package
THRU
BAS16H
FM1200-M
Pb Free Produ
SOD-123+ PACKAGE
Package outline
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
SOD-123H
optimize board space.
Ordering
Information:
loss, high efficiency.
• Low power
0.146(3.7)
0.130(3.3)
capability, low forward voltage drop.
• High current
Device PN Packing • High surge capability.
(1) (2)
BAS16H ‐T
G ‐WS Tape&Reel: 3 Kpcs/Reel for overvoltage protection.
• Guardring
high-speed switching.
• Ultra
Note: (1)
Packing code, Tape & Reel Packing • Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
•(2) RoHS product for packing code suffix ”G”；Halogen free product for packing code suffix “H” MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
Halogen free product for packing code suffix "H"
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
0.024(0.6)
• Epoxy : UL94-V0 rated flame retardant
• Case : Molded plastic, SOD-123H
,
• Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
0.031(0.8) Typ.
Method 2026
• Polarity : Indicated by cathode band
• Mounting Position : Any
• Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND***Disclaimer***
ELECTRICAL CHARACTERISTICS
Ratings at 25℃
ambient temperature unless otherwise specified.
WILLAS reserves the right to make changes without notice to any product Single phase half wave, 60Hz, resistive of inductive load.
specification herein, to make corrections, modifications, enhancements or other For capacitive load, derate current by 20%
changes. WILLAS or anyone on its behalf assumes no responsibility or liability SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
RATINGS
Marking
Code
12
13
14
15
16
18
10
115
120
for any errors or inaccuracies. Data sheet specifications and its information 20
30
40
50
60
80
100
150
200
Maximum Recurrent Peak Reverse Voltage
VRRM
contained are intended to provide a product description only. "Typical" parameters 14
21
28
35
42
56
70
105
140
Maximum RMS Voltage
VRMS
Maximum
DC Blocking Voltage
which may be included on WILLAS data sheets and/ or specifications can 20
30
40
50
60
80
100
150
200
VDC
Maximum
Average Forward Rectified Current
IO
1.0
and do vary in different applications and actual performance may vary over time. Peak WILLAS does not assume any liability arising out of the application or Forward Surge Current 8.3 ms single half sine-wave
30
IFSM
superimposed on rated load (JEDEC method)
use of any product or circuit. 40
Typical Thermal Resistance (Note 2)
RΘJA
120
Typical
CJ
Junction Capacitance (Note 1)
-55
to
+125
-55 to +150
Operating Temperature Range
TJ
WILLAS products are not designed, intended or authorized for use in medical, 65
to
+175
Storage Temperature Range
TSTG
life‐saving implant or other applications intended for life‐sustaining or other related CHARACTERISTICS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
applications where a failure or malfunction of component or circuitry may directly 0.9
Maximum
Forward Voltage at 1.0A DC
0.92
VF
0.50
0.70
0.85
0.5
Maximum
Average Reverse Current at @T A=25℃
or indirectly cause injury or threaten a life without expressed written approval IR
10
@T A=125℃
Rated DC Blocking Voltage
of WILLAS. Customers using or selling WILLAS components for use in NOTES:
such applications do so at their own risk and shall agree to fully indemnify WILLAS 1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal
Resistance From Junction to Ambient
Inc and its subsidiaries harmless against all claims, damages and expenditures
. 2012-06
2013-07
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.