MJE15028 D

MJE15028, MJE15030 (NPN),
MJE15029, MJE15031 (PNP)
Complementary Silicon
Plastic Power Transistors
These devices are designed for use as high−frequency drivers in
audio amplifiers.
Features
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8 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
120−150 VOLTS, 50 WATTS
• High Current Gain − Bandwidth Product
• TO−220 Compact Package
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
NPN
COLLECTOR
2,4
COLLECTOR
2,4
Collector−Emitter Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
VCEO
Collector−Base Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
VCB
Emitter−Base Voltage
VEB
5.0
Vdc
IC
8.0
Adc
3
EMITTER
ICM
16
Adc
4
Base Current
IB
2.0
Adc
Total Device Dissipation
@ TC = 25_C
Derate above 25°C
PD
50
0.40
W
W/_C
Total Device Dissipation
@ TA = 25_C
Derate above 25°C
PD
2.0
0.016
W
W/_C
−65 to +150
_C
120
150
Operating and Storage Junction
Temperature Range
Vdc
120
150
Collector Current − Continuous
Collector Current − Peak
Vdc
PNP
TJ, Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
BASE
1
BASE
3
EMITTER
TO−220
CASE 221A
STYLE 1
1
2
3
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Symbol
Max
Unit
MJE150xxG
Thermal Resistance, Junction−to−Case
RqJC
2.5
_C/W
AY WW
Thermal Resistance, Junction−to−Ambient
RqJA
62.5
_C/W
Characteristics
MJE150xx = Device Code
x = 28, 29, 30, or 31
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 7
1
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
MJE15028/D
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
VCEO(sus)
Collector−Emitter Sustaining Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
MJE15028, MJE15029
MJE15030, MJE15031
Vdc
120
150
Collector Cutoff Current
(VCE = 120 Vdc, IB = 0)
MJE15028, MJE15029
(VCE = 150 Vdc, IB = 0)
MJE15030, MJE15031
ICEO
Collector Cutoff Current
(VCB = 120 Vdc, IE = 0)
MJE15028, MJE15029
(VCB = 150 Vdc, IE = 0)
MJE15030, MJE15031
ICBO
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
−
−
mAdc
−
0.1
−
0.1
mAdc
−
10
−
10
−
10
40
40
40
20
−
−
−
−
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 Adc, VCE = 2.0 Vdc)
(IC = 2.0 Adc, VCE = 2.0 Vdc)
(IC = 3.0 Adc, VCE = 2.0 Vdc)
(IC = 4.0 Adc, VCE = 2.0 Vdc)
hFE
DC Current Gain Linearity
(VCE From 2.0 V to 20 V, IC From 0.1 A to 3 A)
(NPN to PNP)
hFE
Collector−Emitter Saturation Voltage
(IC = 1.0 Adc, IB = 0.1 Adc)
VCE(sat)
Base−Emitter On Voltage
(IC = 1.0 Adc, VCE = 2.0 Vdc)
VBE(on)
−
Typ
2
3
Vdc
−
0.5
−
1.0
30
−
Vdc
DYNAMIC CHARACTERISTICS
Current Gain − Bandwidth Product (Note 2)
(IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz)
fT
MHz
PD, POWER DISSIPATION (WATTS)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.
2. fT = ⎪hfe⎪• ftest.
TA
TC
3.0
60
2.0
40
TC
1.0
20
0
0
TA
0
20
40
60
80
100
120
T, TEMPERATURE (°C)
Figure 1. Power Derating
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2
140
160
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.1
0.02
0.03
0.02
0.01
SINGLE PULSE
0.01
0.01
0.02
0.05
P(pk)
ZqJC(t) = r(t) RqJC
RqJC = 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
0.05
0.07
0.05
0.1
0.2
0.5
1.0
2.0
5.0
t, TIME (ms)
10
20
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200
500
1.0 k
IC, COLLECTOR CURRENT (AMP)
Figure 2. Thermal Response
20
16
10
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 3 and 4 is based on T J(pk) = 150_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
< 150_C. TJ(pk) may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
100 ms
5ms
dc
1.0
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ TC = 25°C
0.1
0.02
2.0
MJE15028
MJE15029
MJE15030
MJE15031
5.0
10
50
20
120 150
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 3. Forward Bias Safe Operating Area
1000
8.0
Cib (NPN)
Cib (PNP)
C, CAPACITANCE (pF)
IC, COLLECTOR CURRENT (AMP)
500
5.0
IC/IB = 10
TC = 25°C
3.0
VBE(off) = 9 V
2.0
0
0
100
Cob (PNP)
50
30
5V
3V
1.0
200
Cob (NPN)
20
1.5 V
0V
100 110 120 130 140 150
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
1.5
3.0
5.0 7.0 10
30
50
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
Figure 4. Reverse−Bias Switching
Safe Operating Area
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3
100 150
fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
hfe , SMALL SIGNAL CURRENT GAIN
100
50
30
VCE = 10 V
IC = 0.5 A
TC = 25°C
20
PNP
NPN
10
5.0
0.5
2.0
3.0
f, FREQUENCY (MHz)
1.0
0.7
5.0
7.0
10
100
90
(PNP)
(NPN)
60
50
20
10
0
0.1
0.2
NPN — MJE15028 MJE15030
1K
500
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
VCE = 2 V
VCE = 2.0 V
500
TJ = 150°C
TJ = 25°C
TJ = -55°C
30
20
10
0.1
10
PNP — MJE15029 MJE15031
1K
100
70
50
5.0
Figure 7. Current Gain−Bandwidth Product
Figure 6. Small−Signal Current Gain
200
150
1.0
0.5
2.0
IC, COLLECTOR CURRENT (AMP)
TJ = 150°C
200
TJ = 25°C
100
TJ = -55°C
50
20
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
5.0
10
0.1
10
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
5.0
10
Figure 8. DC Current Gain
NPN
PNP
TJ = 25°C
1.8
TJ = 25°C
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.6
1.2
1.0
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 2.0 V
1.4
1.0
VBE(sat) @ IC/IB = 10
0.8
VBE(on) @ VCE = 2.0 V
0.4
VCE(sat) = IC/IB = 20
0.2
VCE(sat) = IC/IB = 20
IC/IB = 10
0.1
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
5.0
0
0.1
10
Figure 9. “On” Voltage
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4
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
IC/IB = 10
5.0
10
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
10
1.0
VCC = 80 V
IC/IB = 10
TJ = 25°C
0.5
VCC = 80 V
IC/IB = 10, IB1 = IB2
ts (NPN) TJ = 25°C
5.0
t, TIME (s)
μ
t, TIME (s)
μ
3.0
td (NPN, PNP)
tr (PNP)
0.2
0.1
ts (PNP)
1.0
0.5
0.05
tf (PNP)
tr (NPN)
0.03
0.02
0.01
0.1
2.0
0.2
0.2
0.5
1.0
2.0
IC, COLLECTOR CURRENT (AMP)
5.0
0.1
0.1
10
tf (NPN)
0.2
0.3
0.5
2.0
IC, COLLECTOR CURRENT (AMP)
Figure 11. Turn−Off Times
Figure 10. Turn−On Times
ORDERING INFORMATION
Device
Package
Shipping
MJE15028G
TO−220
(Pb−Free)
50 Units / Rail
MJE15029G
TO−220
(Pb−Free)
50 Units / Rail
MJE15030G
TO−220
(Pb−Free)
50 Units / Rail
MJE15031G
TO−220
(Pb−Free)
50 Units / Rail
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5
5.0
10
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
SEATING
PLANE
C
F
T
S
4
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
A
Q
1 2 3
U
H
K
Z
L
R
V
J
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
G
D
N
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
BASE
COLLECTOR
EMITTER
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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For additional information, please contact your local
Sales Representative
MJE15028/D