FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20349 Generic Copy Issue Date: 20-Jun-2014 TITLE: Qualification of Niigata Fab (Japan) as the additional wafer source for Bipolar Power Planar Transistors. PROPOSED FIRST SHIP DATE: 20-Sep-2014 AFFECTED CHANGE CATEGORY(S): ON Semiconductor Fab Site FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or CW Yong <[email protected]> SAMPLES: Contact your local ON Semiconductor Sales Office ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or Laura Rivers <[email protected]> NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. implementation of the change. FPCNs are issued at least 90 days prior to ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>. DESCRIPTION AND PURPOSE: This is the Final Notification by ON Semiconductor notifying customers of its plan to add Niigata Fab (Japan) as the qualified wafer source for Bipolar Power Planar Transistor. The Niigata Fab facility is an ON Semiconductor owned wafer fab that has been producing products for ON Semiconductor. Several existing technologies within ON Semiconductor’s product families are currently sourced from Niigata Fab. ON Semiconductor Niigata Wafer Fab is an internal factory that is TS16949, ISO-9001 and ISO-14000 certified. Qualification tests are designed to show that the reliability of the transferred devices will continue to meet or exceed ON Semiconductor standards. Issue Date: 20-Jun-2014 Rev. 06-Jan-2010 Page 1 of 3 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20349 RELIABILITY DATA SUMMARY: Package: TO220 MJE5852G Test: HTRB Autoclave H3TRB IOL TC RSH Conditions: Ta=150C,80% Rated Voltage Ta=121C RH=100% ~15 psig Ta=85C RH=85% bias=80% rated V or100V Max Ta=25C, Delta TJ = 100 C, Ton/off = 3.5 min. Ta= -65 C to 150 C Ta=260C, 10 sec dwell Interval: 1008 hrs 96 hrs 1008 hrs Results 0/80 0/80 0/80 8572 cyc 0/80 1000 cyc 0/80 0/30 Interval: 1008 hrs 96 hrs 504 hrs Results 0/160 0/160 0/160 7500 cyc 0/160 1000 cyc 0/160 0/60 Package: DPAK MJD340T4G Test: Conditions: HTRB Ta=150C,80% Rated Voltage Autoclave+PC Ta=121C RH=100% ~15 psig H3TRB+PC Ta=85C RH=85% bias=80% rated V or100V Max IOL+PC Ta=25C, Delta TJ = 100 C, Ton/off = 2 min. TC+PC Ta= -65 C to 150 C RSH Ta=260C, 10 sec dwell ELECTRICAL CHARACTERISTIC SUMMARY: There are no changes in electrical characteristics and product performance meets data sheet Specifications. Characterization data is available upon request. CHANGED PART IDENTIFICATION: Affected products from ON Semiconductor with date code 1436 representing WW36, 2014 and greater may be sourced from either the Niigata Fab (Japan) or the ISMF Fab (Malaysia). Issue Date: 20-Jun-2014 Rev. 06-Jan-2010 Page 2 of 3 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #20349 List of affected General Parts: MJF44H11G MJE340G MJB45H11T4G MJB44H11G D44H8G MJE344G 2N5657G MJE15029G MJE15031G D44VH10G D44H11G MJB44H11T4G MJE15032G BD135TG BD139G MJE182G BD137G BD135G BD159G MJD340T4G MJD44H11RLG MJD44H11G MJD44H11T5G MJD44H11-1G MJD44H11T4G NJW0281G NJL1302DG MJF15031G MJE15033G MJE172G BD140G BD788G MJE170G MJE171G BD136G BD138G BD787G MJE181G MJE180G NJD2873T4G 2N5655G MJE3439G MJD340RLG MJD340G MJE5850G NJW1302G MJW1302AG MJL1302AG D45H8G D45VH10G D45H11G MJB45H11G MJF45H11G MJE5851G MJL4302AG MJE350G MJD45H11RLG MJD45H11-1G MJD45H11G MJD45H11T4G NJL0302DG NJW0302G MJE5852G Issue Date: 20-Jun-2014 Rev. 06-Jan-2010 Page 3 of 3