BD676G, BD678G, BD680G, BD682G, BD676AG, BD678AG, BD680AG, BD682TG Plastic Medium-Power Silicon PNP Darlingtons http://onsemi.com This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary 4.0 AMP DARLINGTON POWER TRANSISTORS PNP SILICON 45, 60, 80, 100 VOLT, 40 WATT COLLECTOR 2, 4 with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and are RoHS Compliant* BASE 3 EMITTER 1 MAXIMUM RATINGS Rating Collector-Emitter Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG Symbol Value VCEO Unit Vdc 45 60 80 100 Collector-Base Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG VCB Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 0.1 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 0.32 W W/°C −55 to +150 °C Operating and Storage Junction Temperature Range Vdc 45 60 80 100 TJ, Tstg TO−225 CASE 77−09 STYLE 1 1 2 3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MARKING DIAGRAMS YWW BD6xxG YWW BD6xxAG Y = Year WW = Work Week BD6xx = Device Code xx = 76, 78, 80, 82, or 82T G = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit ORDERING INFORMATION RqJC 3.13 °C/W See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 14 Publication Order Number: BD676/D BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max Unit OFF CHARACTERISTICS BVCEO Collector−Emitter Breakdown Voltage (Note 1) (IC = 50 mAdc, IB = 0) BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) ICEO Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO. IE = 0, TC = 100°C) ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO Vdc 45 60 80 100 − − − − − 500 − − 0.2 2.0 − 2.0 mAdc mAdc mAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) BD676G, BD678G, BD680G, BD682G (IC = 2.0 Adc, VCE = 3.0 Vdc) BD676AG, BD678AG, BD680AG hFE Collector−Emitter Saturation Voltage (Note 1) (IC = 1.5 Adc, IB = 30 mAdc) BD678G, BD680G, BD682G (IC = 2.0 Adc, IB = 40 mAdc) BD676AG, BD678AG, BD680AG VCE(sat) Base−Emitter On Voltage (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) BD678G, BD680G, BD682G (IC = 2.0 Adc, VCE = 3.0 Vdc) BD676AG, BD678AG, BD680AG VBE(on) − 750 − 750 − Vdc − 2.5 − 2.8 Vdc − 2.5 − 2.5 1.0 − DYNAMIC CHARACTERISTICS hfe Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) − Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 50 5.0 IC, COLLECTOR CURRENT (AMP) PD, POWER DISSIPATION (WATTS) 45 40 2.0 35 1.0 30 25 0.5 20 0.2 15 10 0.1 5.0 0 15 BONDING WIRE LIMIT THERMAL LIMIT at TC = 25°C SECONDARY BREAKDOWN LIMIT 30 45 60 75 90 105 120 135 150 0.05 1.0 165 TC = 25°C BD676, 676A BD678, 678A BD680, 680A BD682 TC, CASE TEMPERATURE (°C) 2.0 5.0 10 50 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area http://onsemi.com 2 100 BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. COLLECTOR PNP BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, BD682TG BASE [ 8.0 k [ 120 EMITTER Figure 3. Darlington Circuit Schematic ORDERING INFORMATION Device Package Shipping BD676G TO−225 (Pb−Free) 500 Units / Box BD676AG TO−225 (Pb−Free) 500 Units / Box BD678G TO−225 (Pb−Free) 500 Units / Box BD678AG TO−225 (Pb−Free) 500 Units / Box BD680G TO−225 (Pb−Free) 500 Units / Box BD680AG TO−225 (Pb−Free) 500 Units / Box BD682G TO−225 (Pb−Free) 500 Units / Box BD682TG TO−225 (Pb−Free) 50 Units / Rail http://onsemi.com 3 BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG PACKAGE DIMENSIONS TO−225 CASE 77−09 ISSUE AC 4 3 2 1 1 2 3 FRONT VIEW BACK VIEW NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. NUMBER AND SHAPE OF LUGS OPTIONAL. E A1 Q A PIN 4 BACKSIDE TAB D P 1 2 3 L1 L 2X DIM A A1 b b2 c D E e L L1 P Q MILLIMETERS MIN MAX 2.40 3.00 1.00 1.50 0.60 0.90 0.51 0.88 0.39 0.63 10.60 11.10 7.40 7.80 2.04 2.54 14.50 16.63 1.27 2.54 2.90 3.30 3.80 4.20 STYLE 1: PIN 1. EMITTER 2., 4. COLLECTOR 3. BASE b2 2X e b FRONT VIEW c SIDE VIEW ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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