BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T Plastic Medium−Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain − • • • • hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc Monolithic Construction BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 Pb−Free Package are Available* http://onsemi.com 4.0 AMP DARLINGTON POWER TRANSISTORS PNP SILICON 45, 60, 80, 100 VOLT, 40 WATT TO−225AA CASE 77 STYLE 1 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BD676, BD676A BD678, BD678A BD680, BD680A BD682 VCEO Collector-Base Voltage BD676, BD676A BD678, BD678A BD680, BD680A BD682 VCB Emitter-Base Voltage Value Unit Vdc 45 60 80 100 MARKING DIAGRAMS Vdc 45 60 80 100 YWW BD6xxG VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 0.1 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 40 0.32 W W/°C TJ, Tstg −55 to +150 °C Symbol Max Unit RqJC 3.13 °C/W Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case 3 2 1 YWW B BD6xxG BD6xx = Device Code xx = 76, 76A, 78, 78A, 80, 80A, 82, or 82T Y = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 12 Publication Order Number: BD676/D BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit BVCEO 45 60 80 100 − − − − Vdc Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0) ICEO − 500 mAdc Collector Cutoff Current (VCB = Rated BVCEO, IE = 0) (VCB = Rated BVCEO. IE = 0, TC = 100°C) ICBO − − 0.2 2.0 Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO − 2.0 mAdc 750 750 − − − − − − 2.5 2.8 Vdc − − 2.5 2.5 1.0 − OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 50 mAdc, IB = 0) BD676, 676A BD678, 678A BD680, 680A BD682 mAdc ON CHARACTERISTICS DC Current Gain (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) BD676, 678, 680, 682 BD676A, 678A, 680A hFE Collector−Emitter Saturation Voltage (Note 1) (IC = 1.5 Adc, IB = 30 mAdc) (IC = 2.0 Adc, IB = 40 mAdc) BD678, 680, 682 BD676A, 678A, 680A Base−Emitter On Voltage (Note 1) (IC = 1.5 Adc, VCE = 3.0 Vdc) (IC = 2.0 Adc, VCE = 3.0 Vdc) BD678, 680, 682 BD676A, 678A, 680A VCE(sat) VBE(on) Vdc DYNAMIC CHARACTERISTICS Small−Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz) hfe − 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 5.0 45 IC, COLLECTOR CURRENT (AMP) PD, POWER DISSIPATION (WATTS) 50 2.0 40 35 1.0 30 25 0.5 20 15 0.2 10 0.1 5.0 0 15 BONDING WIRE LIMIT THERMAL LIMIT at TC = 25°C SECONDARY BREAKDOWN LIMIT 30 45 60 75 90 105 120 135 150 0.05 1.0 165 TC = 25°C BD676, 676A BD678, 678A BD680, 680A BD682 TC, CASE TEMPERATURE (°C) 2.0 5.0 10 20 50 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. Power Temperature Derating Figure 2. DC Safe Operating Area 100 At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown. There are two limitations on the power handling ability of a transistor average junction temperature and secondary breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; e.g., the transistor must not be subjected to greater dissipation than the curves indicate. http://onsemi.com 2 BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T COLLECTOR PNP BD676, 676A BD678, 678A BD680, 680A BD682 BASE [ 8.0 k [ 120 EMITTER Figure 3. Darlington Circuit Schematic ORDERING INFORMATION Device Package Shipping BD676 TO−225AA 500 Units / Box BD676G TO−225AA (Pb−Free) 500 Units / Box BD676A TO−225AA 500 Units / Box BD676AG TO−225AA (Pb−Free) 500 Units / Box BD678 TO−225AA 500 Units / Box BD678G TO−225AA (Pb−Free) 500 Units / Box BD678A TO−225AA 500 Units / Box BD678AG TO−225AA (Pb−Free) 500 Units / Box BD680 TO−225AA 500 Units / Box BD680G TO−225AA (Pb−Free) 500 Units / Box BD680A TO−225AA 500 Units / Box BD680AG TO−225AA (Pb−Free) 500 Units / Box BD682 TO−225AA 500 Units / Box BD682G TO−225AA (Pb−Free) 500 Units / Box BD682T TO−225AA 50 Units / Rail BD682TG TO−225AA (Pb−Free) 50 Units / Rail http://onsemi.com 3 BD676, BD676A, BD678, BD678A, BD680, BD680A, BD682, BD682T PACKAGE DIMENSIONS TO−225AA CASE 77−09 ISSUE Z −B− U F Q −A− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 077−01 THRU −08 OBSOLETE, NEW STANDARD 077−09. C M 1 2 3 H DIM A B C D F G H J K M Q R S U V K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5_ TYP 0.148 0.158 0.045 0.065 0.025 0.035 0.145 0.155 0.040 −−− MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.65 0.64 0.88 3.69 3.93 1.02 −−− STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 4 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. BD676/D