1SMA10CAT3 D

1SMA10CAT3G Series,
SZ1SMA10CAT3G Series
400 Watt Peak Power Zener
Transient Voltage
Suppressors
www.onsemi.com
Bidirectional
The SMA series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMA series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
SURMETIC ® package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
10−78 V VR
400 W PEAK POWER
SMA
CASE 403D
PLASTIC
Features
•
•
•
•
•
•
•
•
•
•
Working Peak Reverse Voltage Range − 10 V to 78 V
Standard Zener Breakdown Voltage Range − 11.7 V to 91.3 V
Peak Power − 400 Watts @ 1 ms
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Response Time is Typically < 1 ns
Flat Handling Surface for Accurate Placement
Package Design for Top Slide or Bottom Circuit Board Mounting
Low Profile Package
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These are Pb−Free Devices*
Mechanical Characteristics:
CASE: Void-free, transfer-molded plastic
FINISH: All external surfaces are corrosion resistant and leads are
MARKING DIAGRAM
xxC
AYWWG
xxC
A
Y
WW
G
= Device Code (Refer to page 3)
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
POLARITY: Cathode polarity notch does not indicate polarity
MOUNTING POSITION: Any
Device**
Package
Shipping†
1SMAxxCAT3G
SMA
(Pb−Free)
5,000 /
Tape & Reel
SZ1SMAxxCAT3G
SMA
(Pb−Free)
5,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
**The “T3” suffix refers to a 13 inch reel.
DEVICE MARKING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2016
April, 2016 − Rev. 13
1
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
Publication Order Number:
1SMA10CAT3/D
1SMA10CAT3G Series, SZ1SMA10CAT3G Series
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ TL = 25°C, Pulse Width = 1 ms
PPK
400
W
DC Power Dissipation @ TL = 75°C Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
PD
1.5
20
50
W
mW/°C
°C/W
RqJA
0.5
4.0
250
W
mW/°C
°C/W
TJ, Tstg
−65 to +150
°C
DC Power Dissipation (Note 3) @ TA = 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
RqJL
PD
Operating and Storage Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec.
ELECTRICAL CHARACTERISTICS
I
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
IR
VBR
IT
IPP
IT
VC VBR VRWM IR
Working Peak Reverse Voltage
IR VRWM VBR VC
IT
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
IPP
Test Current
Bi−Directional TVS
www.onsemi.com
2
V
1SMA10CAT3G Series, SZ1SMA10CAT3G Series
ELECTRICAL CHARACTERISTICS
Device*
Device
Marking
VC @ IPP
(Note 6)
Breakdown Voltage
VRWM
(Note 4)
IR @ VRWM
Volts
mA
Min
Nom
@ IT
VC
IPP
C Typ.
(Note 7)
Max
mA
Volts
Amps
pF
VBR (Volts) (Note 5)
1SMA10CAT3G
1SMA12CAT3G
1SMA13CAT3G
1SMA15CAT3G
1SMA16CAT3G
QXC
REC
RGC
RMC
RPC
10
12
13
15
16
2.5
2.5
2.5
2.5
2.5
11.1
13.3
14.4
16.7
17.8
11.69
14.00
15.16
17.58
18.74
12.27
14.70
15.92
18.46
19.67
1.0
1.0
1.0
1.0
1.0
17.0
19.9
21.5
24.4
26.0
23.5
20.1
18.6
16.4
15.4
580
490
455
400
375
1SMA18CAT3G
1SMA20CAT3G
1SMA24CAT3G
RTC
RVC
RZC
18
20
24
2.5
2.5
2.5
20
22.2
26.7
21.06
23.37
28.11
22.11
24.54
29.51
1.0
1.0
1.0
29.2
32.4
38.9
13.7
12.3
10.3
335
305
260
1SMA26CAT3G
1SMA28CAT3G
1SMA30CAT3G
1SMA33CAT3G
SEC
SGC
SKC
SMC
26
28
30
33
2.5
2.5
1.0
2.5
28.9
31.1
33.3
36.7
30.42
32.74
35.06
38.63
31.94
34.37
36.81
40.56
1.0
1.0
1.0
1.0
42.1
45.4
48.4
53.3
9.5
8.8
8.3
7.5
240
225
210
190
1SMA36CAT3G
1SMA40CAT3G
SPC
SRC
36
40
2.5
2.5
40
44.4
42.11
46.74
44.21
49.07
1.0
1.0
58.1
64.5
6.9
6.2
175
160
1SMA48CAT3G
1SMA58CAT3G
SXC
TGC
48
58
2.5
2.5
53.3
64.4
56.11
67.79
58.91
71.18
1.0
1.0
77.4
93.6
5.2
4.3
135
115
1SMA60CAT3G
1SMA70CAT3G
1SMA78CAT3G
TKC
TPC
TTC
60
70
78
2.5
2.5
2.5
66.7
77.8
86.7
70.21
81.90
91.27
73.72
85.99
95.83
1.0
1.0
1.0
96.8
113
126
4.1
3.5
3.2
110
95
90
4. A transient suppressor is normally selected according to the working peak reverse voltage (VRWM), which should be equal to or greater than
the DC or continuous peak operating voltage level
5. VBR measured at pulse test current IT at an ambient temperature of 25°C
6. Surge current waveform per Figure 2 and derate per Figure 3
7. Bias voltage = 0 V, F = 1.0 MHz, TJ = 25°C.
†Please see 1SMA5.0AT3 to 1SMA78AT3 for Unidirectional devices.
* Include SZ-prefix devices where applicable.
www.onsemi.com
3
1SMA10CAT3G Series, SZ1SMA10CAT3G Series
RATING AND TYPICAL CHARACTERISTIC CURVES
120
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 2.
TA = 25°C
10
Ippm, PEAK PULSE CURRENT (%)
Ppk , PEAK POWER (kW)
100
1
0.1
10-4
= 10 ms
100
60
0.01
0.1
tP, PULSE WIDTH (ms)
1
HALF VALUE - Ipp/2
40
10/1000 ms WAVEFORM
AS DEFINED BY R.E.A.
20
0
0.001
PEAK VALUE
Ippm
80
10
td
0
1
2
3
5
4
t, TIME (ms)
Figure 1. Pulse Rating Curve
Figure 2. Pulse Waveform
1,000
120
1SMA10CAT3G
10 x 1000 WAVEFORM
AS DEFINED BY R.E.A.
100
1SMA18CAT3G
C, CAPACITANCE (pF)
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT
TA = 25°C
PW (ID) IS DEFINED AS THE
POINT WHERE THE PEAK CURRENT
DECAYS TO 50% OF Ipp.
80
60
40
100
TJ = 25°C
F = 1 MHz
1SMA48CAT3G
1SMA78CAT3G
10
20
0
1
0
40
80
120
160
TA, AMBIENT TEMPERATURE (°C)
1
200
10
BIAS VOLTAGE (VOLTS)
Figure 4. Typical Junction Capacitance vs.
Bias Voltage
Figure 3. Pulse Derating Curve
www.onsemi.com
4
100
1SMA10CAT3G Series, SZ1SMA10CAT3G Series
PACKAGE DIMENSIONS
SMA
CASE 403D
ISSUE H
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
A
L
A1
c
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SURMETIC is a registered trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
5
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
1SMA10CAT3/D