BTB12 600CW3 D

BTB12-600CW3G,
BTB12-800CW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full‐wave ac control applications
where high noise immunity and high commutating di/dt are required.
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Features
TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
•Blocking Voltage to 800 V
•On‐State Current Rating of 12 Amperes RMS at 25°C
•Uniform Gate Trigger Currents in Three Quadrants
•High Immunity to dV/dt - 1500 V/ms minimum at 125°C
•Minimizes Snubber Networks for Protection
•Industry Standard TO‐220AB Package
•High Commutating dI/dt - 3.0 A/ms minimum at 125°C
•These are Pb-Free Devices
MT2
MT1
G
MARKING
DIAGRAM
4
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Peak Repetitive Off-State Voltage (Note 1)
(TJ = -40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
BTB12-600CW3G
BTB12-800CW3G
VDRM,
VRRM
On‐State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 80°C)
IT(RMS)
12
A
ITSM
120
A
I2t
78
A2sec
VDSM/
VRSM
VDSM/VRSM
+100
V
Peak Gate Current (TJ = 125°C, t = 20ms)
IGM
4.0
A
Peak Gate Power
(Pulse Width ≤ 1.0 ms, TC = 80°C)
PGM
20
W
Average Gate Power (TJ = 125°C)
PG(AV)
1.0
Operating Junction Temperature Range
TJ
Storage Temperature Range
Tstg
Peak Non‐Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
Circuit Fusing Consideration (t = 10 ms)
Non-Repetitive Surge Peak Off-State
Voltage (TJ = 25°C, t = 10ms)
Value
Unit
V
600
800
1
2
BTB12-xCWG
AYWW
TO-220AB
CASE 221A
STYLE 4
3
x
A
Y
WW
G
= 6 or 8
= Assembly Location
= Year
= Work Week
= Pb-Free Package
PIN ASSIGNMENT
1
Main Terminal 1
2
Main Terminal 2
W
3
Gate
-40 to +125
°C
4
Main Terminal 2
-40 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
Package
Shipping
BTB12-600CW3G
TO-220AB
(Pb-Free)
50 Units / Rail
BTB12-800CW3G
TO-220AB
(Pb-Free)
50 Units / Rail
*For additional information on our Pb-Free strategy and
soldering details, please download the ON Semicon‐
ductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
February, 2008 - Rev. 1
1
Publication Order Number:
BTB12-600CW3/D
BTB12-600CW3G, BTB12-800CW3G
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction-to-Case
Junction-to-Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds
Symbol
Value
Unit
RqJC
RqJA
2.3
60
°C/W
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
-
-
0.005
1.0
-
-
1.55
2.0
2.0
2.0
-
35
35
35
-
-
45
-
-
50
80
50
0.5
0.5
0.5
-
1.7
1.1
1.1
0.2
0.2
0.2
-
-
(dI/dt)c
3.0
-
-
A/ms
Critical Rate of Rise of On-State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)
dI/dt
-
-
50
A/ms
Critical Rate of Rise of Off‐State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dV/dt
1500
-
-
V/ms
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM/
IRRM
mA
ON CHARACTERISTICS
Peak On‐State Voltage (Note 2)
(ITM = ±17 A Peak)
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IGT
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±100 mA)
IH
Latching Current (VD = 12 V, IG = 42 mA)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IL
Gate Trigger Voltage (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGT
Gate Non-Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGD
V
mA
mA
mA
V
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
BTB12-600CW3G, BTB12-800CW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
VTM
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 -
VTM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
Quadrant I
(+) IGT
GATE
(-) IGT
GATE
MT1
MT1
REF
REF
IGT -
+ IGT
(-) MT2
Quadrant III
Quadrant 1
MainTerminal 2 +
(-) MT2
Quadrant IV
(+) IGT
GATE
(-) IGT
GATE
MT1
MT1
REF
REF
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in-phase signals (using standard AC lines) quadrants I and III are used.
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3
+ Voltage
IDRM at VDRM
P(AV), AVERAGE POWER DISSIPATION (WATTS)
BTB12-600CW3G, BTB12-800CW3G
TC, CASE TEMPERATURE (°C)
125
120°, 90°, 60°, 30°
110
95
180°
80
DC
65
0
2
4
6
8
10
IT(RMS), RMS ON‐STATE CURRENT (AMP)
12
20
DC
18
180°
16
120°
14
12
10
8
90°
60°
6
30°
4
2
0
0
100
MAXIMUM @ TJ = 125°C
10
1
0.1
0.01
0.1
1
10
100
t, TIME (ms)
1000
1·104
Figure 4. Thermal Response
40
MAXIMUM @ TJ = 25°C
35
1
IH, HOLD CURRENT (mA)
I T, INSTANTANEOUS ON‐STATE CURRENT (AMP)
TYPICAL AT
TJ = 25°C
12
Figure 2. On‐State Power Dissipation
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 1. Typical RMS Current Derating
2
4
6
8
10
IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
0.1
0
0.5
1
1.5
2
2.5
3
3.5
VT, INSTANTANEOUS ON‐STATE VOLTAGE (V)
30
MT2 POSITIVE
25
20
15
MT2 NEGATIVE
10
5
-40 -25 -10
4
5
20
35 50
65
80
95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. On‐State Characteristics
Figure 5. Typical Hold Current Variation
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4
BTB12-600CW3G, BTB12-800CW3G
Q3
10
Q1
Q2
VGT, GATE TRIGGER VOLTAGE (V)
1.8
VD = 12 V
RL = 30 W
-40 -25 -10
5
20
35 50
65
80
VD = 12 V
RL = 30 W
1.6
1.4
Q1
1.2
1
0.8
Q3
Q2
0.6
0.4
-40 -25 -10
1
95 110 125
TJ, JUNCTION TEMPERATURE (°C)
5
20
35 50
65
80
95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Typical Gate Trigger Current Variation
dv/dt , CRITICAL RATE OF RISE OF OFF‐STATE VOLTAGE (V/ μ s)
Figure 7. Typical Gate Trigger Voltage Variation
5000
VD = 800 Vpk
TJ = 125°C
4K
3K
2K
1K
0
10
100
1000
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (OHMS)
10000
Figure 8. Critical Rate of Rise of Off‐State Voltage
(Exponential Waveform)
LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
CHARGE
1N4007
MEASURE
I
TRIGGER
CHARGE
CONTROL
NON‐POLAR
CL
TRIGGER CONTROL
IGT, GATE TRIGGER VOLTAGE (mA)
100
+
200 V
MT2
1N914 51 W
MT1
G
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c
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5
BTB12-600CW3G, BTB12-800CW3G
PACKAGE DIMENSIONS
TO-220
CASE 221A-07
ISSUE AA
-TB
F
T
SEATING
PLANE
C
S
4
Q
A
U
1 2 3
H
K
Z
R
L
V
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
----0.080
STYLE 4:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
----2.04
MAIN TERMINAL 1
MAIN TERMINAL 2
GATE
MAIN TERMINAL 2
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BTB12-600CW3/D