BTA16-600CW3G, BTA16-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. http://onsemi.com Features • • • • • • • • • TRIACS 16 AMPERES RMS 600 thru 800 VOLTS Blocking Voltage to 800 V On-State Current Rating of 16 A RMS at 25°C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt − 1000 V/s minimum at 125°C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt − 8.5 A/ms minimum at 125°C Internally Isolated (2500 VRMS) These Devices are Pb−Free and are RoHS Compliant* MT2 MT1 G MARKING DIAGRAM 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = −40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open) BTA16−600CW3G BTA16−800CW3G VDRM, VRRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 25°C) IT(RMS) 16 A ITSM 170 A I2t 144 A2sec VDSM/ VRSM VDSM/VRSM +100 V Peak Gate Current (TJ = 125°C, t = 20 s) IGM 4.0 A Peak Gate Power (Pulse Width ≤ 1.0 s, TC = 80°C) PGM 20 W Average Gate Power (TJ = 125°C) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25°C) Circuit Fusing Consideration (t = 10 ms) Non−Repetitive Surge Peak Off−State Voltage (TJ = 25°C, t = 10ms) Value Unit V 600 800 1 PG(AV) 1.0 W Operating Junction Temperature Range TJ −40 to +125 °C Storage Temperature Range Tstg −40 to +150 °C RMS Isolation Voltage (t = 300 ms, R.H. ≤ 30%, TA = 25°C) Viso 2500 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2012 September, 2012 − Rev. 3 1 2 BTA16−xCWG AYWW TO−220AB CASE 221A STYLE 12 3 x A Y WW G = 6 or 8 = Assembly Location (Optional)* = Year = Work Week = Pb−Free Package * The Assembly Location code (A) is optional. In cases where the Assembly Location is stamped on the package the assembly code may be blank. PIN ASSIGNMENT 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 No Connection ORDERING INFORMATION Device Package Shipping BTA16−600CW3G TO−220AB (Pb−Free) 50 Units / Rail BTA16−800CW3G TO−220AB (Pb−Free) 50 Units / Rail Publication Order Number: BTA16−600CW3/D BTA16−600CW3G, BTA16−800CW3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case (AC) Junction−to−Ambient Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds Symbol Value Unit RJC RJA 2.3 60 °C/W TL 260 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions) Symbol Min Typ Max − − − − 0.005 2.0 − − 1.55 2.0 2.0 2.0 − − − 35 35 35 − − 50 − − − − − − 60 65 60 0.5 0.5 0.5 − − − 1.7 1.1 1.1 0.2 0.2 0.2 − − − − − − (dI/dt)c 8.5 − − A/ms Critical Rate of Rise of On−State Current (TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns) dI/dt − − 50 A/s Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C) dV/dt 1000 − − V/s Characteristic Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C TJ = 125°C IDRM, IRRM mA ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = ± 22.5 A Peak) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 ) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = ±500 mA) IH Latching Current (VD = 12 V, IG = 1.2 x IGT) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) IL Gate Trigger Voltage (VD = 12 V, RL = 30 ) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) VGT Gate Non−Trigger Voltage (TJ = 125°C) MT2(+), G(+) MT2(+), G(−) MT2(−), G(−) VGD V mA mA mA V V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125°C, No Snubber) 2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 BTA16−600CW3G, BTA16−800CW3G Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VTM VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 − IH off state VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 (−) IGT GATE Quadrant I (+) IGT GATE MT1 MT1 REF REF IGT − + IGT (−) MT2 Quadrant III (−) MT2 Quadrant IV (+) IGT GATE (−) IGT GATE MT1 MT1 REF REF − MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 Quadrant 1 MainTerminal 2 + + Voltage IDRM at VDRM 125 20 120 18 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (°C) BTA16−600CW3G, BTA16−800CW3G = 30 and 60° 110 120° = 90° 105 = 180° 100 95 90° 14 60° 12 = 120° 10 DC 90 = 30° 8 6 4 85 2 0 2 4 6 8 10 12 IT(RMS), RMS ON‐STATE CURRENT (AMP) 14 0 16 0 1000 Typical @ TJ = 25°C 100 2 4 6 8 10 12 IT(RMS), ON‐STATE CURRENT (AMP) 14 16 Figure 2. On-State Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 1. RMS Current Derating Typical @ TJ = −40°C Typical @ TJ = 125°C 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 1·104 Figure 4. Thermal Response 10 40 Typical @ TJ = −40°C 35 IH, HOLD CURRENT (mA) I T, INSTANTANEOUS ON‐STATE CURRENT (AMP) 180° 16 115 80 DC 1 Typical @ TJ = 25°C Typical @ TJ = 125°C 0.1 0.5 1 1.5 2 2.5 30 MT2 POSITIVE 25 20 15 MT2 NEGATIVE 10 5 −40 −25 −10 3 VT, INSTANTANEOUS ON-STATE VOLTAGE (V) 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (°C) Figure 3. On-State Characteristics Figure 5. Hold Current Variation http://onsemi.com 4 BTA16−600CW3G, BTA16−800CW3G 1.6 Q3 10 1 Q1 Q2 −40 −25 −10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) VGT, GATE TRIGGER VOLTAGE (V) VD = 12 V RL = 30 VD = 12 V RL = 30 1.4 Q1 1.2 1 Q3 0.8 Q2 0.6 0.4 −40 −25 −10 5 20 35 50 65 80 95 TJ, JUNCTION TEMPERATURE (°C) 110 125 LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC CHARGE 1N4007 MEASURE I TRIGGER CHARGE CONTROL NON‐POLAR CL 110 125 Figure 7. Gate Trigger Voltage Variation Figure 6. Gate Trigger Current Variation TRIGGER CONTROL IGT, GATE TRIGGER VOLTAGE (mA) 100 + 200 V MT2 1N914 51 MT1 G Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 8. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 5 BTA16−600CW3G, BTA16−800CW3G PACKAGE DIMENSIONS TO−220 CASE 221A−07 ISSUE AA −T− B F 4 Q SEATING PLANE C T S A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 12: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE NOT CONNECTED ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BTA16−600CW3/D