MAC08BT1 D

MAC08BT1, MAC08MT1
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for use in solid state relays, MPU interface, TTL logic and
other light industrial or consumer applications. Supplied in surface
mount package for use in automated manufacturing.
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Features
•
•
•
•
•
TRIAC
0.8 AMPERE RMS
200 thru 600 VOLTS
Sensitive Gate Trigger Current in Four Trigger Modes
Blocking Voltage to 600 Volts
Glass Passivated Surface for Reliability and Uniformity
Surface Mount Package
Pb−Free Packages are Available
MT2
MT1
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Unit
MARKING
DIAGRAM
V
4
Rating
Symbol
Peak Repetitive Off−State Voltage (Note 1)
(Sine Wave, 50 to 60 Hz, Gate Open,
MAC08BT1
TJ = 25 to 110°C)
MAC08MT1
VDRM,
VRRM
On−State Current RMS (TC = 80°C)
(Full Sine Wave 50 to 60 Hz)
IT(RMS)
0.8
A
Peak Non−repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TC = 25°C)
ITSM
8.0
A
Value
200
600
SOT−223
CASE 318E
STYLE 11
AYW
AC08x G
G
1
A
Y
W
AC08X
2
=
=
=
=
Assembly Location
Year
Work Week
Device Code
x= B or M
G
= Pb−Free Package
(Note: Microdot may be in either location)
I2t
0.4
A2s
PGM
5.0
W
PG(AV)
0.1
W
Operating Junction Temperature Range
TJ
−40 to +110
°C
1
Main Terminal 1
Storage Temperature Range
Tstg
−40 to +150
°C
2
Main Terminal 2
3
Gate
4
Main Terminal 2
Circuit Fusing Considerations
(Pulse Width = 8.3 ms)
Peak Gate Power
(TC = 80°C, Pulse Width v 1.0 ms)
Average Gate Power
(TC = 80°C, t = 8.3 ms)
3
PIN ASSIGNMENT
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
PCB Mounted per Figure 1
RqJA
156
°C/W
Thermal Resistance, Junction−to−Tab
Measured on MT2 Tab Adjacent to Epoxy
RqJT
25
°C/W
Maximum Device Temperature for
Soldering Purposes for 10 Secs Maximum
TL
260
°C
ORDERING INFORMATION
Shipping †
Device
Package
MAC08BT1
SOT−223
1000 Tape & Reel
MAC08BT1G
SOT−223
(Pb−Free)
1000 Tape & Reel
MAC08MT1
SOT−223
1000 Tape & Reel
MAC08MT1G
SOT−223
(Pb−Free)
1000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 5
1
Publication Order Number:
MAC08BT1/D
MAC08BT1, MAC08MT1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions.)
Characteristic
Symbol
Min
Typ
Max
Unit
−
−
−
−
10
200
mA
mA
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
IDRM,
IRRM
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
Peak On−State Voltage (Note 2)
(IT = "1.1 A Peak)
VTM
−
−
1.9
V
Gate Trigger Current (Continuous dc) All Quadrants
(VD = 12 Vdc, RL = 100 W)
IGT
−
−
10
mA
Holding Current (Continuous dc)
(VD = 12 Vdc, Gate Open, Initiating Current = "20 mA)
IH
−
−
5.0
mA
VGT
−
−
2.0
V
(dv/dt)c
1.5
−
−
V/ms
dv/dt
10
−
−
V/ms
Gate Trigger Voltage (Continuous dc) All Quadrants
(VD = 12 Vdc, RL = 100 W)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
(f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS
On−State Current Duration = 2.0 mS, VDRM = 200 V,
Gate Unenergized, TC = 110°C,
Gate Source Resistance = 150 W, See Figure 10)
Critical Rate−of−Rise of Off State Voltage
(Vpk = Rated VDRM, TC= 110°C, Gate Open, Exponential Method)
2. Pulse Test: Pulse Width ≤ 300 msec, Duty Cycle ≤2%.
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Symbol
Parameter
VTM
VDRM
Peak Repetitive Forward Off State Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Reverse Off State Voltage
IRRM
Peak Reverse Blocking Current
VTM
Maximum On State Voltage
IH
Holding Current
Quadrant 1
MainTerminal 2 +
on state
IH
IRRM at VRRM
off state
IH
Quadrant 3
MainTerminal 2 −
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2
VTM
+ Voltage
IDRM at VDRM
MAC08BT1, MAC08MT1
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
Quadrant II
(+) MT2
(−) IGT
GATE
Quadrant I
(+) IGT
GATE
MT1
MT1
REF
REF
IGT −
+ IGT
(−) MT2
Quadrant III
(−) MT2
Quadrant IV
(+) IGT
GATE
(−) IGT
GATE
MT1
MT1
REF
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
0.15
3.8
0.079
2.0
0.091
2.3
0.091
2.3
0.244
6.2
0.079
2.0
0.984
25.0
0.059
1.5
0.096
2.44
0.059
1.5
0.059
1.5
0.096
2.44
0.059
1.5
inches
mm
BOARD MOUNTED VERTICALLY IN CINCH 8840 EDGE CONNECTOR.
BOARD THICKNESS = 65 MIL., FOIL THICKNESS = 2.5 MIL.
MATERIAL: G10 FIBERGLASS BASE EPOXY
0.096
2.44
0.059
1.5
0.472
12.0
Figure 1. PCB for Thermal Impedance and Power Testing of SOT-223
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3
10
1.0
0.1
TYPICAL AT TJ = 110°C
MAX AT TJ = 110°C
MAX AT TJ = 25°C
0.01
0
1.0
2.0
3.0
4.0
vT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Rθ JA , JUNCTION TO AMBIENT THERMAL
RESISTANCE, ° C/W
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
MAC08BT1, MAC08MT1
5.0
160
150
140
130
120
110
100
90
80
70
60
50
40
30
DEVICE MOUNTED ON
FIGURE 1 AREA = L2
AS SHOWN
1 2 3
MINIMUM
FOOTPRINT = 0.076 cm2
0
2.0
T A , MAXIMUM ALLOWABLEAMBIENT TEMPERATURE (° C)
4.0
6.0
FOIL AREA (cm2)
8.0
10
Figure 3. Junction to Ambient Thermal
Resistance versus Copper Tab Area
110
110
α
30°
90
90°
80
100
α
60°
T A , MAXIMUM ALLOWABLE
AMBIENT TEMPERATURE (° C)
100
α = CONDUCTION
ANGLE
dc
70
α = 180°
60
120°
50
MINIMUM FOOTPRINT
50 OR 60 Hz
40
α = 180°
60
120°
1.0 cm2
50
FOIL AREA
50 OR 60 Hz
40
30
20
0.5
dc
70
20
0.4
0.1
0.2
0.3
IT(RMS), RMS ON-STATE CURRENT (AMPS)
60°
90°
80
30
0
30°
90
α
α
α = CONDUCTION
ANGLE
0
0.1
Figure 4. Current Derating, Minimum Pad Size
Reference: Ambient Temperature
T A , MAXIMUM ALLOWABLEAMBIENT TEMPERATURE (° C)
L
4
PCB WITH TAB AREA
Figure 2. On-State Characteristics
0.2
0.3
0.4
0.5
0.6
IT(RMS), RMS ON-STATE CURRENT (AMPS)
0.7
Figure 5. Current Derating, 1.0 cm Square Pad
Reference: Ambient Temperature
110
110
α
30°
60°
90
dc
30°
α
105
α = CONDUCTION
90°
70
4.0 cm2 FOIL AREA
60
0
0.1
0.2
0.3
0.4
0.5
0.6
IT(RMS), RMS ON-STATE CURRENT (AMPS)
0.7
60°
dc
100
ANGLE
α = 180°
120°
80
T(tab) , MAXIMUM ALLOWABLE
TAB TEMPERATURE (° C)
100
50
L
TYPICAL
MAXIMUM
α = 180°
95
90
REFERENCE:
FIGURE 1
85
80
0.8
90°
120°
α
α
α = CONDUCTION
ANGLE
0
Figure 6. Current Derating, 2.0 cm Square Pad
Reference: Ambient Temperature
0.1
0.2
0.3
0.4
0.5
0.6
IT(RMS), ON-STATE CURRENT (AMPS)
Figure 7. Current Derating
Reference: MT2 Tab
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4
0.7
0.8
MAC08BT1, MAC08MT1
1.0
α
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
P(AV), MAXIMUM AVERAGE
POWER DISSIPATION (WATTS)
1.0
α
0.9
0.8
α = CONDUCTION
0.7
ANGLE
0.6
120°
0.5
0.4
30°
α = 180°
0.3
60°
dc
0.2
90°
0.1
0.1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
IT(RMS), RMS ON-STATE CURRENT (AMPS)
0.7
0.01
0.0001
0.8
0.001
Figure 8. Power Dissipation
0.01
0.1
1.0
t, TIME (SECONDS)
LL
1N4007
TRIGGER CONTROL
MEASURE
I
CHARGE
100
Figure 9. Thermal Response, Device
Mounted on Figure 1 Printed Circuit Board
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
TRIGGER
10
CHARGE
CONTROL
NON-POLAR
CL
RS
−
ADJUST FOR +
dv/dt(c)
CS
MT2
1N914 51 W
G
200 V
MT1
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 10. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage (dv/dt)c
10
10
60 Hz
60°
80°
180 Hz
COMMUTATING dv/dt
dv/dt c , (V/ μ S)
COMMUTATING dv/dt
dv/dt c , (V/ μ S)
400 Hz
110°
ITM
100°
tw
f=
1.0
1.0
VDRM
1
2 tw
6fI TM
(dińdt) c + 1000
1.0
60
10
di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
300 Hz
VDRM = 200 V
70
80
90
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Typical Commutating dv/dt versus
Current Crossing Rate and Junction Temperature
Figure 12. Typical Commutating dv/dt versus
Junction Temperature at 0.8 Amps RMS
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5
110
MAC08BT1, MAC08MT1
60
MAIN TERMINAL #2
POSITIVE
40
MAIN TERMINAL #1
POSITIVE
10
100
1000
RG, GATE − MAIN TERMINAL 1 RESISTANCE (OHMS)
IGT4
IGT1
0.1
−40
10,000
Figure 13. Exponential Static dv/dt versus
Gate − Main Terminal 1 Resistance
0
20
40
60
80
TJ, JUNCTION TEMPERATURE (°C)
100
VGT , GATE TRIGGER VOLTAGE (VOLTS)
1.1
5.0
4.0
MAIN TERMINAL #2
POSITIVE
3.0
2.0
MAIN TERMINAL #1
POSITIVE
1.0
0
−40
−20
Figure 14. Typical Gate Trigger Current Variation
6.0
IH , HOLDING CURRENT (mA)
IGT2
1.0
30
20
IGT3
I GT , GATE TRIGGER CURRENT (mA)
50
STATIC dv/dt (V/ μ s)
10
600 Vpk
TJ = 110°C
−20
0
20
40
60
80
0.3
−40
100
TJ, JUNCTION TEMPERATURE (°C)
VGT3
VGT4
VGT2
VGT1
−20
0
20
40
60
80
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. Typical Holding Current Variation
Figure 16. Gate Trigger Voltage Variation
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6
100
MAC08BT1, MAC08MT1
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
D
b1
DIM
A
A1
b
b1
c
D
E
e
e1
L1
HE
4
HE
1
2
3
E
b
e1
e
0.08 (0003)
q
C
q
A
A1
L1
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
1.50
6.70
0°
MILLIMETERS
NOM
MAX
1.63
1.75
0.06
0.10
0.75
0.89
3.06
3.20
0.29
0.35
6.50
6.70
3.50
3.70
2.30
2.40
0.94
1.05
1.75
2.00
7.00
7.30
10°
−
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
0.069
0.276
−
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
0.078
0.287
10°
STYLE 11:
PIN 1. MT 1
2. MT 2
3. GATE
4. MT 2
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MAC08BT1/D