MMSZ4678T1 D

MMSZ4xxxT1G Series,
SZMMSZ4xxxT1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
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Features
•
•
•
•
•
•
•
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range − 1.8 V to 43 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
SOD−123
CASE 425
STYLE 1
1
Cathode
MARKING DIAGRAM
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic case
FINISH: Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
1
260°C for 10 Seconds
POLARITY: Cathode indicated by polarity band
FLAMMABILITY RATING: UL 94 V−0
xx
M
G
MAXIMUM RATINGS
Rating
Total Power Dissipation on FR−5 Board,
(Note 1) @ TL = 75°C
Derated above 75°C
xx M G
G
= Device Code (Refer to page 3)
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
Symbol
PD
Thermal Resistance, (Note 2)
Junction−to−Ambient
RqJA
Thermal Resistance, (Note 2)
Junction−to−Lead
RqJL
Junction and Storage Temperature Range
2
Anode
TJ, Tstg
Max
Units
500
6.7
mW
mW/°C
340
150
−55 to
+150
ORDERING INFORMATION
Device
Package
Shipping†
°C/W
MMSZ4xxxT1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
°C/W
SZMMSZ4xxxT1G
SOD−123
(Pb−Free)
3,000 /
Tape & Reel
MMSZ4xxxT3G
SOD−123
(Pb−Free)
10,000 /
Tape & Reel
SZMMSZ4xxxT3G
SOD−123
(Pb−Free)
10,000 /
Tape & Reel
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 3.5 X 1.5 inches, using the minimum recommended footprint.
2. Thermal Resistance measurement obtained via infrared Scan Method.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 10
1
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
Publication Order Number:
MMSZ4678T1/D
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
I
otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Symbol
IF
Parameter
VZ
Reverse Zener Voltage @ IZT
IZT
Reverse Current
IR
Reverse Leakage Current @ VR
VR
Reverse Voltage
IF
Forward Current
VF
Forward Voltage @ IF
VZ VR
Product parametric performance is indicated in the Electrical
Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical
Characteristics if operated under different conditions.
IR VF
IZT
Zener Voltage Regulator
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2
V
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 0.9 V Max. @ IF = 10 mA)
Zener Voltage (Note 3)
VZ (Volts)
Leakage Current
@ IZT
IR @ VR
Device
Marking
Min
Nom
Max
mA
mA
Volts
MMSZ4678T1G
CC
1.71
1.8
1.89
50
7.5
1
MMSZ4679T1G
CD
1.90
2.0
2.10
50
5
1
MMSZ4680T1G
CE
2.09
2.2
2.31
50
4
1
Device*
MMSZ4681T1G
CF
2.28
2.4
2.52
50
2
1
MMSZ4682T1G
CH
2.565
2.7
2.835
50
1
1
MMSZ4683T1G
CJ
2.85
3.0
3.15
50
0.8
1
MMSZ4684T1G
CK
3.13
3.3
3.47
50
7.5
1.5
MMSZ4685T1G
CM
3.42
3.6
3.78
50
7.5
2
MMSZ4686T1G
CN
3.70
3.9
4.10
50
5
2
MMSZ4687T1G
CP
4.09
4.3
4.52
50
4
2
MMSZ4688T1G
CT
4.47
4.7
4.94
50
10
3
MMSZ4689T1G
CU
4.85
5.1
5.36
50
10
3
MMSZ4690T1G/T3G
CV
5.32
5.6
5.88
50
10
4
MMSZ4691T1G
CA
5.89
6.2
6.51
50
10
5
MMSZ4692T1G
CX
6.46
6.8
7.14
50
10
5.1
MMSZ4693T1G
CY
7.13
7.5
7.88
50
10
5.7
MMSZ4694T1G
CZ
7.79
8.2
8.61
50
1
6.2
MMSZ4695T1G
DC
8.27
8.7
9.14
50
1
6.6
MMSZ4696T1G
DD
8.65
9.1
9.56
50
1
6.9
MMSZ4697T1G
DE
9.50
10
10.50
50
1
7.6
MMSZ4698T1G
DF
10.45
11
11.55
50
0.05
8.4
MMSZ4699T1G
DH
11.40
12
12.60
50
0.05
9.1
MMSZ4700T1G
DJ
12.35
13
13.65
50
0.05
9.8
MMSZ4701T1G
DK
13.30
14
14.70
50
0.05
10.6
MMSZ4702T1G
DM
14.25
15
15.75
50
0.05
11.4
DN
15.20
16
16.80
50
0.05
12.1
DP
16.15
17
17.85
50
0.05
12.9
MMSZ4705T1G
DT
17.10
18
18.90
50
0.05
13.6
MMSZ4706T1G
DU
18.05
19
19.95
50
0.05
14.4
MMSZ4707T1G
DV
19.00
20
21.00
50
0.01
15.2
MMSZ4708T1G
DA
20.90
22
23.10
50
0.01
16.7
MMSZ4709T1G
DX
22.80
24
25.20
50
0.01
18.2
MMSZ4710T1G
DY
23.75
25
26.25
50
0.01
19.0
MMSZ4703T1G
†
MMSZ4704T1G
MMSZ4711T1G
†
EA
25.65
27
28.35
50
0.01
20.4
MMSZ4712T1G
EC
26.60
28
29.40
50
0.01
21.2
MMSZ4713T1G
ED
28.50
30
31.50
50
0.01
22.8
MMSZ4714T1G
EE
31.35
33
34.65
50
0.01
25.0
MMSZ4715T1G
EF
34.20
36
37.80
50
0.01
27.3
MMSZ4716T1G
EH
37.05
39
40.95
50
0.01
29.6
MMSZ4717T1G
EJ
40.85
43
45.15
50
0.01
32.6
3. Nominal Zener voltage is measured with the device junction in thermal equilibrium at TL = 30°C ±1°C.
*Include SZ-prefix devices where applicable.
†MMSZ4703 and MMSZ4711 Not Available in 10,000/Tape & Reel
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3
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
8
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
θ VZ, TEMPERATURE COEFFICIENT (mV/°C)
TYPICAL CHARACTERISTICS
7
6
TYPICAL TC VALUES
5
4
VZ @ IZT
3
2
1
0
-1
-2
-3
2
3
4
5
6
7
8
9
10
VZ, NOMINAL ZENER VOLTAGE (V)
11
100
TYPICAL TC VALUES
VZ @ IZT
10
1
12
10
100
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
1000
Ppk , PEAK SURGE POWER (WATTS)
PD, POWER DISSIPATION (WATTS)
1.2
1.0
PD versus TL
0.8
0.6
PD versus TA
0.4
0.2
0
0
25
50
75
100
T, TEMPERATURE (5C)
125
RECTANGULAR
WAVEFORM, TA = 25°C
100
10
1
0.1
150
Figure 3. Steady State Power Derating
10
PW, PULSE WIDTH (ms)
100
1000
Figure 4. Maximum Nonrepetitive Surge Power
1000
1000
IZ = 1 mA
TJ = 25°C
IZ(AC) = 0.1 IZ(DC)
f = 1 kHz
IF, FORWARD CURRENT (mA)
Z ZT, DYNAMIC IMPEDANCE ( Ω )
1
100
5 mA
20 mA
10
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
100
10
150°C
1
1
10
VZ, NOMINAL ZENER VOLTAGE
100
1
0.4
Figure 5. Effect of Zener Voltage on
Zener Impedance
0.5
75°C 25°C
0.6
0°C
0.7
0.8
0.9
1.0
VF, FORWARD VOLTAGE (V)
Figure 6. Typical Forward Voltage
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4
1.1
1.2
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
TYPICAL CHARACTERISTICS
1000
TA = 25°C
0 V BIAS
1 V BIAS
C, CAPACITANCE (pF)
I R , LEAKAGE CURRENT ( μA)
1000
100
BIAS AT
50% OF VZ NOM
10
1
1
10
VZ, NOMINAL ZENER VOLTAGE (V)
100
100
10
1
+150°C
0.1
0.01
0.001
+25°C
0.0001
-55°C
0.00001
0
10
Figure 7. Typical Capacitance
20
30
40
50
60
70
VZ, NOMINAL ZENER VOLTAGE (V)
Figure 8. Typical Leakage Current
100
100
TA = 25°C
I Z , ZENER CURRENT (mA)
I Z , ZENER CURRENT (mA)
TA = 25°C
10
1
0.1
0.01
80
0
2
4
6
8
VZ, ZENER VOLTAGE (V)
1
0.1
0.01
12
10
10
10
30
50
70
VZ, ZENER VOLTAGE (V)
90
Figure 10. Zener Voltage versus Zener Current
(12 V to 91 V)
Figure 9. Zener Voltage versus Zener Current
(VZ Up to 12 V)
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5
90
MMSZ4xxxT1G Series, SZMMSZ4xxxT1G Series
PACKAGE DIMENSIONS
SOD−123
CASE 425−04
ISSUE G
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A1
ÂÂÂÂ
ÂÂÂÂ
1
HE
DIM
A
A1
b
c
D
E
HE
L
q
E
2
MIN
0.037
0.000
0.020
--0.055
0.100
0.140
0.010
0°
INCHES
NOM
0.046
0.002
0.024
--0.063
0.106
0.145
-----
MAX
0.053
0.004
0.028
0.006
0.071
0.112
0.152
--10 °
STYLE 1:
PIN 1. CATHODE
2. ANODE
q
L
b
MILLIMETERS
MIN
NOM
MAX
0.94
1.17
1.35
0.00
0.05
0.10
0.51
0.61
0.71
----0.15
1.40
1.60
1.80
2.54
2.69
2.84
3.56
3.68
3.86
----0.25
--10 °
0°
C
SOLDERING FOOTPRINT*
ÉÉ
ÉÉ
ÉÉ
0.91
0.036
2.36
0.093
4.19
0.165
ÉÉ
ÉÉ
ÉÉ
SCALE 10:1
1.22
0.048
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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6
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MMSZ4678T1/D