NUF6410MN 6-Channel EMI Filter with Integrated ESD Protection The NUF6410MN is a six−channel (C−R−C) Pi−style EMI filter array with integrated ESD protection. Its typical component values of R = 100 and C = 7 pF deliver a cutoff frequency of 250 MHz and stop band attenuation greater than −20 dB from 800 MHz to 3.0 GHz. This performance makes the part ideal for parallel interfaces with data rates up to 167 Mbps in applications where wireless interference must be minimized. The specified attenuation range is very effective in minimizing interference from 2G/3G, GPS, Bluetooth® and WLAN signals. The NUF6010MU is available in the low−profile 12−lead 1.35 mm x 3.0 mm DFN12 surface mount package. http://onsemi.com MARKING DIAGRAM 1 12 1 Features/Benefits • ±8.0 kV ESD Protection on each channel (IEC61000−4−2 Level 4, Contact Discharge) • R/C Values of 100 and 7 pF deliver Exceptional S21 Performance • • 64 10 MG G DFN12 CASE 506AD Characteristics of 250 MHz f3dB and −20 dB Stop Band Attenuation from 800 MHz to 3.0 GHz Integrated EMI/ESD System Solution in DFN Package Offers Exceptional Cost, System Reliability and Space Savings This is a Pb−Free Device Applications 6410 = Specific Device Code = Date and Assembly Location M G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NUF6410MNT1G DFN12 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. • EMI Filtering for LCD and Camera Data Lines • EMI Filtering and Protection for I/O Ports and Keypads 0 −5 −10 Cd = 7 pF Cd = 7 pF Filter + ESDn S21 (dB) −15 R = 100 Filter + ESDn −20 −25 −30 −35 See Table 1 for pin description −40 −45 1.0E+6 10.0E+6 100.0E+6 1.0E+9 10.0E+9 FREQUENCY (Hz) Figure 1. Electrical Schematic © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 5 Figure 2. Typical Insertion Loss Characteristic 1 Publication Order Number: NUF6410MN/D NUF6410MN 1 2 3 4 5 6 10 9 8 (Bottom View) 7 GND 12 11 Figure 3. Pin Diagram Table 1. FUNCTIONAL PIN DESCRIPTION Filter Device Pins Filter 1 1 & 12 Filter + ESD Channel 1 Description Filter 2 2 & 11 Filter + ESD Channel 2 Filter 3 3 & 10 Filter + ESD Channel 3 Filter 4 4&9 Filter + ESD Channel 4 Filter 5 5&8 Filter + ESD Channel 5 Filter 6 6&7 Filter + ESD Channel 6 Ground Pad GND Ground MAXIMUM RATINGS Parameter ESD Discharge IEC61000−4−2 Symbol Contact Discharge Value Unit VPP 8.0 kV DC Power per Resistor PR 100 mW DC Power per Package PT 600 mW Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C TL 260 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Maximum Reverse Working Voltage Breakdown Voltage Symbol Test Conditions Min Typ Max Unit 5.0 V 10 100 nA 100 115 VRWM VBR IR = 1.0 mA Leakage Current IR VRWM = 3.3 V Resistance RA IR = 20 mA Diode Capacitance Cd VR = 2.5 V, f = 1.0 MHz 7.0 9.0 pF Line Capacitance CL VR = 2.5 V, f = 1.0 MHz 14 18 pF 3 dB Cut−Off Frequency (Note 1) f3dB Above this frequency, appreciable attenuation occurs 250 MHz 6 dB Cut−Off Frequency (Note 1) f6dB Above this frequency, appreciable attenuation occurs 400 MHz 1. 50 source and 50 load termination. http://onsemi.com 2 6.0 85 7.0 V NUF6410MN TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified) 0 0 −5 −10 −10 −20 S41 (dB) S21 (dB) −15 −20 −25 −30 −30 −40 −50 −60 −35 −70 −40 −45 1.0E+6 10.0E+6 100.0E+6 1.0E+9 10.0E+9 −80 1.E+06 1.E+07 1.E+09 1.E FREQUENCY (Hz) FREQUENCY (Hz) Figure 4. Typical Insertion Loss Characteristic Figure 5. Typical Analog Crosstalk 2 110 108 106 1.5 RESISTANCE () NORMALIZED CAPACITANCE 1.E+08 1 0.5 104 102 100 98 96 94 92 0 0 1 2 3 4 90 −40 5 REVERSE VOLTAGE (V) −20 0 20 40 TEMPERATURE (°C) 60 80 Figure 7. Typical Resistance over Temperature Figure 6. Typical Capacitance vs. Reverse Biased Voltage (Normalized Capacitance, Cd @ 2.5 V) http://onsemi.com 3 NUF6410MN Theory of Operation approximation of a square wave, shown below in Equations 1 and 2 in the Fourier series approximation. From this it can be seen that a square wave consists of odd order harmonics and to fully construct a square wave n must go to infinity. However, to retain an acceptable portion of the waveform, the first two terms are generally sufficient. These two terms contain about 85% of the signal amplitude and allow a reasonable square wave to be reconstructed. Therefore, to reasonably pass a square wave of frequency x the minimum filter bandwidth necessary is 3x. All ON Semiconductor EMI filters are rated according to this principle. Attempting to violate this principle will result in significant rounding of the waveform and cause problems in transmitting the correct data. For example, take the filter with the response shown in Figure 8 and apply three different data waveforms. To calculate these three different frequencies, the 3 dB, 6 dB, and 9 dB bandwidths will be used. The NUF6410MN combines ESD protection and EMI filtering conveniently into a small package for today’s size constrained applications. The capacitance inherent to a typical protection diode is utilized to provide the capacitance value necessary to create the desired frequency response based upon the series resistance in the filter. By combining this functionality into one device, a large number of discrete components are integrated into one small package saving valuable board space and reducing BOM count and cost in the application. Application Example The accepted practice for specifying bandwidth in a filter is to use the 3 dB cutoff frequency. Utilizing points such as the 6 dB or 9 dB cutoff frequencies results in signal degradation in an application. This can be illustrated in an application example. A typical application would include EMI filtering of data lines in a camera or display interface. In such an example it is important to first understand the signal and its spectral content. By understanding these things, an appropriate filter can be selected for the desired application. A typical data signal is pattern of 1’s and 0’s transmitted over a line in a form similar to a square wave. The maximum frequency of such a signal would be the pattern 1-0-1-0 such that for a signal with a data rate of 100 Mbps, the maximum frequency component would be 50 MHz. The next item to consider is the spectral content of the signal, which can be understood with the Fourier series Equation 1: a 1 sin((2n * 1) t) x(t) + 1 ) 2 0 2 n + 1 2n * 1 ƪ ƫ (eq. 1) Equation 2 (simplified form of Equation 1): ƪ ƫ sin( 0t) sin(3 0t) sin(5 0t) ) ) ) AAA (eq. 2) x(t) + 1 ) 2 1 3 5 2 −3 dB −6 dB Magnitude (dB) −9 dB f1 f2 100k 1M f3 100M 10M 1G 10G Frequency (Hz) Figure 8. Filter Bandwidth multiply the result by two). The following table gives the bandwidth values and the corresponding maximum supported frequencies and the third harmonic frequencies. From the above paragraphs it is shown that the maximum supported frequency of a waveform that can be passed through the filter can be found by dividing the bandwidth by a factor of three (to obtain the corresponding data rate http://onsemi.com 4 NUF6410MN with a frequency of 66.67 MHz is input to this same filter, the third harmonic term is significantly attenuated. This serves to round the signal edges and skew the waveform, as is shown in Figure 9b. In the case that a 100 MHz signal is input to this filter, the third harmonic term is attenuated even further and results in even more rounding of the signal edges as is shown in Figure 9c. The result is the degradation of the data being transmitted making the digital data (1’s and 0’s) more difficult to discern. This does not include effects of other components such as interconnect and other path losses which could further serve to degrade the signal integrity. While some filter products may specify the 6 dB or 9 dB bandwidths, actually using these to calculate supported frequencies (and corresponding data rates) results in significant signal degradation. To ensure the best signal integrity possible, it is best to use the 3 dB bandwidth to calculate the achievable data rate. Table 2. Frequency Chart Bandwidth Maximum Supported Frequency Third Harmonic Frequency 3 dB – 100 MHz 33.33 MHz (f1) 100 MHz 6 dB – 200 MHz 66.67 MHz (f2) 200 MHz 9 dB – 300 MHz 100 MHz (f3) 300 MHz Considering that 85% of the amplitude of the square is in the first two terms of the Fourier series approximation most of the signal content is at the fundamental (maximum supported) frequency and the third harmonic frequency. If a signal with a frequency of 33.33 MHz is input to this filter, the first two terms are sufficiently passed such that the signal is only mildly affected, as is shown in Figure 9a. If a signal Input Waveform Output Waveform a) Frequency = f1 Input Waveform Output Waveform b) Frequency = f2 Input Waveform c) Frequency = f3 Output Waveform Figure 9. Input and Output Waveforms of Filter http://onsemi.com 5 NUF6410MN PACKAGE DIMENSIONS DFN12 3.0x1.35, 0.5P CASE 506AD−01 ISSUE J 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. EXPOSED PADS CONNECTED TO DIE FLAG. USED AS TEST CONTACTS. 0.15 C A D B (A3) E 2X 0.15 C EXPOSED Cu TOP VIEW PIN ONE REFERENCE (A3) 0.10 C 12 X A 0.08 C SIDE VIEW A1 L 1 L C L1 D2 DETAIL A 12X EDGE OF PACKAGE SEATING PLANE e 2X 0.2 X 0.25 MM NOTE 5 12X K 12 7 12X 0.479 0.019 OPTIONAL CONSTRUCTION E2 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.18 0.30 3.00 BSC 2.10 2.30 1.35 BSC 0.20 0.40 0.50 BSC 0.20 −−− 0.20 0.40 0.00 0.15 SOLDERING FOOTPRINT* DETAIL A EXPOSED PAD 6 DIM A A1 A3 b D D2 E E2 e K L L1 0.265 0.010 b 0.10 C A B BOTTOM VIEW 0.05 C NOTE 3 2.352 0.093 0.500 0.020 Pitch 0.199 0.008 0.351 0.014 SCALE 16:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Bluetooth is a registered trademark of Bluetooth SIG. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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