74LVC244A Low-Voltage CMOS Octal Buffer With 5 V−Tolerant Inputs and Outputs (3−State, Non−Inverting) www.onsemi.com The 74LVC244A is a high performance, non−inverting octal buffer operating from a 1.2 to 3.6 V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers while TTL compatible outputs offer improved switching noise performance. A VI specification of 5.5 V allows 74LVC244A inputs to be safely driven from 5 V devices. The 74LVC244A is suitable for memory address driving and all TTL level bus oriented transceiver applications. Current drive capability is 24 mA at the outputs. The Output Enable (OE) input, when HIGH, disables the output by placing them in a HIGH Z condition. TSSOP−20 DT SUFFIX CASE 948E • • Designed for 1.2 V to 3.6 V VCC Operation 5 V Tolerant − Interface Capability With 5 V TTL Logic Supports Live Insertion and Withdrawal IOFF Specification Guarantees High Impedance When VCC = 0 V 24 mA Output Sink and Source Capability Near Zero Static Supply Current in All Three Logic States (10 mA) Substantially Reduces System Power Requirements ESD Performance: ♦ Human Body Model >2000 V ♦ Machine Model >200 V These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant QFN20 MN SUFFIX CASE 485CB MARKING DIAGRAMS Features • • • • • • QFN20 MN SUFFIX CASE 485AA 20 LVC 244A ALYW G G 1 1 1 LVC 244A ALYWG G 244A ALYWG G QFN20 − 485AA QFN20 − 485CB A L Y W G = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 7 of this data sheet. This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2016 February, 2016 − Rev. 1 1 Publication Order Number: 74LVC244A/D 74LVC244A VCC 2OE 1O0 2D0 1O1 2D1 1O2 2D2 1O3 2D3 20 19 18 17 16 15 14 13 12 11 1OE 1D0 1D1 1 2 3 4 5 6 7 8 9 10 1OE 1D0 2O0 1D1 2O1 1D2 2O2 1D3 2O3 GND 1D2 1D3 19 2 18 4 16 6 14 8 12 1O0 1O1 1O2 1O3 12 11 20 QFN PIN #1 2OE 10 2D0 2 19 17 3 15 5 13 7 11 9 2O0 9 Figure 1. Pinout: 20−Lead (Top View) 2D1 PIN NAMES 2D2 PINS FUNCTION nOE Output Enable Inputs 1Dn, 2Dn Data Inputs 1On, 2On 3−State Outputs 2D3 INPUTS OUTPUTS 1Dn 2Dn 1On, 2On L L L L H H H X Z 2O1 2O2 2O3 Figure 2. Logic Diagram TRUTH TABLE 1OE 2OE 1 H = High Voltage Level L = Low Voltage Level Z = High Impedance State X = High or Low Voltage Level and Transitions are Acceptable For ICC reasons, DO NOT FLOAT Inputs www.onsemi.com 2 74LVC244A MAXIMUM RATINGS Symbol VCC Parameter Condition Value Unit −0.5 to +6.5 V −0.5 ≤ VI ≤ +6.5 V Output in 3−State −0.5 ≤ VO ≤ +6.5 V Output in HIGH or LOW State (Note 1) −0.5 ≤ VO ≤ VCC + 0.5 V DC Supply Voltage VI DC Input Voltage VO DC Output Voltage IIK DC Input Diode Current VI < GND −50 mA IOK DC Output Diode Current VO < GND −50 mA VO > VCC +50 mA IO DC Output Source/Sink Current ±50 mA ICC DC Supply Current Per Supply Pin ±100 mA IGND DC Ground Current Per Ground Pin ±100 mA TSTG Storage Temperature Range −65 to +150 °C TL Lead Temperature, 1 mm from Case for 10 Seconds TL = 260 °C TJ Junction Temperature Under Bias TJ = 135 °C qJA Thermal Resistance (Note 2) 110.7 °C/W MSL Moisture Sensitivity Level 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. IO absolute maximum rating must be observed. 2. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow. RECOMMENDED OPERATING CONDITIONS Symbol VCC Parameter Min Supply Voltage Operating Functional Typ Max V 1.65 1.2 3.6 3.6 VI Input Voltage 0 5.5 VO Output Voltage HIGH or LOW State 3−State 0 0 VCC 5.5 IOH IOL Units V V HIGH Level Output Current VCC = 3.0 V − 3.6 V VCC = 2.7 V − 3.0 V −24 −12 mA LOW Level Output Current VCC = 3.0 V − 3.6 V VCC = 2.7 V − 3.0 V 24 12 mA TA Operating Free−Air Temperature −40 +125 Dt/DV Input Transition Rise or Fall Rate VCC = 1.65 V to 2.7 V VCC = 2.7 V to 3.6 V 0 0 20 10 °C ns/V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 3 74LVC244A DC ELECTRICAL CHARACTERISTICS −405C to +855C Symbol VIH VIL VOH VOL II −405C to +1255C Parameter Conditions Min Typ (Note 3) HIGH−level input voltage VCC = 1.2 V 1.08 − − 1.08 − − VCC = 1.65 V to 1.95 V 0.65 x VCC − − 0.65 x VCC − − VCC = 2.3 V to 2.7 V 1.7 − − 1.7 − − VCC = 2.7 V to 3.6 V 2.0 − − 2.0 − − LOW−level input voltage HIGH−level output voltage LOW−level output voltage Input leakage current Max Min Typ (Note 3) Max Unit V VCC = 1.2 V − − 0.12 − − 0.12 VCC = 1.65 V to 1.95 V − − 0.35 x VCC − − 0.35 x VCC VCC = 2.3 V to 2.7 V − − 0.7 − − 0.7 VCC = 2.7 V to 3.6 V − − 0.8 − − 0.8 V V VI = VIH or VIL IO = −100 mA; VCC = 1.65 V to 3.6 V VCC − 0.2 − − VCC − 0.3 − − IO = −4 mA; VCC = 1.65 V 1.2 − − 1.05 − − IO = −8 mA; VCC = 2.3 V 1.8 − − 1.65 − − IO = −12 mA; VCC = 2.7 V 2.2 − − 2.05 − − IO = −18 mA; VCC = 3.0 V 2.4 − − 2.25 − − IO = −24 mA; VCC = 3.0 V 2.2 − − 2.0 − − IO = 100 mA; VCC = 1.65 V to 3.6 V − − 0.2 − − 0.3 IO = 4 mA; VCC = 1.65 V − − 0.45 − − 0.65 V VI = VIH or VIL IO = 8 mA; VCC = 2.3 V − − 0.6 − − 0.8 IO = 12 mA; VCC = 2.7 V − − 0.4 − − 0.6 IO = 24 mA; VCC = 3.0 V − − 0.55 − − 0.8 VI = 5.5V or GND VCC = 3.6 V − ±0.1 ±5 − ±0.1 ±20 mA IOZ OFF−state output current VI = VIH or VIL; VO = 5.5 V or GND; VCC = 3.6 V − ±0.1 ±5 − ±0.1 ±20 mA IOFF Power−off leakage current VI or VO = 5.5 V; VCC = 0.0 V − ±0.1 ±10 − ±0.1 ±20 mA ICC Supply current VI = VCC or GND; IO = 0 A; VCC = 3.6 V − 0.1 10 − 0.1 40 mA Additional supply current per input pin; VI = VCC − 0.6 V; IO = 0 A; VCC = 2.7 V to 3.6 V − 5 500 − 5 5000 mA DICC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. All typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise. www.onsemi.com 4 74LVC244A AC ELECTRICAL CHARACTERISTICS (tR = tF = 2.5 ns) −405C to +855C Symbol tpd ten tdis tsk(0) Parameter Propagation Delay (Note 5) nDn to nOn Enable Time (Note 6) nOE to nOn Disable Time (Note 7) nOE to nOn −405C to +1255C Conditions Min Typ1 Max Min Typ1 Max Unit VCC = 1.2 V − 17.0 − − − − ns VCC = 1.65 V to 1.95 V 1.5 6.4 13.7 1.5 − 15.8 VCC = 2.3 V to 2.7 V 1.0 3.4 7.1 1.0 − 8.2 VCC = 2.7 V 1.5 3.4 6.9 1.5 − 9.0 VCC = 3.0 V to 3.6 V 1.5 2.9 5.9 1.5 − 7.5 VCC = 1.2 V − 24.0 − − − − VCC = 1.65 V to 1.95 V 1.5 7.0 17.3 1.5 − 20.0 VCC = 2.3 V to 2.7 V 1.5 3.9 9.5 1.5 − 11.0 VCC = 2.7 V 1.5 4.1 8.6 1.5 − 11.0 VCC = 3.0 V to 3.6 V 1.0 3.2 7.6 1.0 − 9.5 VCC = 1.2 V − 9.0 − − − − VCC = 1.65 V to 1.95 V 2.2 4.5 9.8 2.2 − 11.3 VCC = 2.3 V to 2.7 V 0.5 3.6 5.5 0.5 − 6.4 VCC = 2.7 V 1.5 3.3 6.8 1.5 − 8.5 VCC = 3.0 V to 3.6 V 1.5 3.1 5.8 1.5 − 7.5 − − 1 − − 1.5 Output Skew Time (Note 8) ns ns ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Typical values are measured at TA = 25°C and VCC = 3.3 V, unless stated otherwise. 5. tpd is the same as tPLH and tPHL. 6. ten is the same as tPZL and tPZH. 7. tdis is the same as tPLZ and tPHZ. 8. Skew between any two outputs of the same package switching in the same direction. This parameter is guaranteed by design. DYNAMIC SWITCHING CHARACTERISTICS TA = +25°C Symbol Characteristic Condition Min Typ Max Unit VOLP Dynamic LOW Peak Voltage (Note 9) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V 0.8 0.6 V VOLV Dynamic LOW Valley Voltage (Note 9) VCC = 3.3 V, CL = 50 pF, VIH = 3.3 V, VIL = 0 V VCC = 2.5 V, CL = 30 pF, VIH = 2.5 V, VIL = 0 V −0.8 −0.6 V 9. Number of outputs defined as “n”. Measured with “n−1” outputs switching from HIGH−to−LOW or LOW−to−HIGH. The remaining output is measured in the LOW state. CAPACITIVE CHARACTERISTICS Symbol CIN COUT CPD Condition Typical Unit Input Capacitance Parameter VCC = 3.3 V, VI = 0 V or VCC 4 pF Output Capacitance VCC = 3.3 V, VI = 0 V or VCC 5 pF Power Dissipation Capacitance (Note 10) pF Per input; VI = GND or VCC VCC = 1.65 V to 1.95 V 6.4 VCC = 2.3 V to 2.7 V 9.6 VCC = 3.0 V to 3.6 V 12.5 10. CPD is used to determine the dynamic power dissipation (PD in mW). PD = CPD x VCC2 x fi x N + S (CL x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz CL = output load capacitance in pF VCC = supply voltage in Volts N = number of outputs switching S(CL x VCC2 x fo) = sum of the outputs. www.onsemi.com 5 74LVC244A VCC Vmi 1Dn, 2Dn Vmi 0V tPLH tPHL VOH Vmo 1On, 2On Vmo VOL WAVEFORM 1 − PROPAGATION DELAYS tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns VCC Vmi 1OE, 2OE Vmi 0V tPZH tPHZ VCC VOH - 0.3 V Vmo 1On, 2On ≈0V tPZL tPLZ ≈ 3.0 V Vmo 1On, 2On VOL + 0.3 V GND WAVEFORM 2 − OUTPUT ENABLE AND DISABLE TIMES tR = tF = 2.5 ns, 10% to 90%; f = 1 MHz; tW = 500 ns Figure 3. AC Waveforms VCC Symbol 3.3 V ± 0.3 V 2.7 V Vmi 1.5 V 1.5 V VCC/2 Vmo 1.5 V 1.5 V VCC/2 VCC < 2.7 V VHZ VOL + 0.3 V VOL + 0.3 V VOL + 0.15 V VLZ VOH − 0.3 V VOH − 0.3 V VOH − 015 V www.onsemi.com 6 74LVC244A VCC VI VO PULSE GENERATOR R1 DUT RT CL VEXT OPEN GND RL CL includes jig and probe capacitance RT = ZOUT of pulse generator (typically 50 W) R1 = RL Supply Voltage Input Load VEXT VCC (V) VI tr, tf CL RL tPLH, tPHL tPLZ, tPZL tPHZ, tPZH 1.2 VCC ≤ 2 ns 30 pF 1 kW Open 2 x VCC GND 1.65 − 1.95 VCC ≤ 2 ns 30 pF 1 kW Open 2 x VCC GND 2.3 − 2.7 VCC ≤ 2 ns 30 pF 500 W Open 2 x VCC GND 2.7 2.7 V ≤ 2.5 ns 50 pF 500 W Open 2 x VCC GND 3 − 3.6 2.7 V ≤ 2.5 ns 50 pF 500 W Open 2 x VCC GND Figure 4. Test Circuit ORDERING INFORMATION Package Shipping† TSSOP−20 (Pb−Free) 2500 / Tape & Reel 74LVC244AMN2TWG (In Development) QFN20, 2.5x3.5 (Pb−Free) 3000 / Tape & Reel 74LVC244AMNTWG (In Development) QFN20, 2.5x4.5 (Pb−Free) 3000 / Tape & Reel Device 74LVC244ADTR2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 7 74LVC244A PACKAGE DIMENSIONS TSSOP−20 CASE 948E−02 ISSUE C 20X 0.15 (0.006) T U 2X K REF 0.10 (0.004) S L/2 20 M T U S V K K1 ÍÍÍÍ ÍÍÍÍ ÍÍÍÍ S J J1 11 B L SECTION N−N −U− PIN 1 IDENT 0.25 (0.010) N 1 10 M 0.15 (0.006) T U S A −V− N F DETAIL E C G D H DETAIL E 0.100 (0.004) −T− SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. DIMENSION K DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN EXCESS OF THE K DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. TERMINAL NUMBERS ARE SHOWN FOR REFERENCE ONLY. 7. DIMENSION A AND B ARE TO BE DETERMINED AT DATUM PLANE −W−. MILLIMETERS INCHES DIM MIN MAX MIN MAX A 6.40 6.60 0.252 0.260 B 4.30 4.50 0.169 0.177 C --1.20 --0.047 D 0.05 0.15 0.002 0.006 F 0.50 0.75 0.020 0.030 G 0.65 BSC 0.026 BSC −W− H 0.27 0.37 0.011 0.015 J 0.09 0.20 0.004 0.008 J1 0.09 0.16 0.004 0.006 K 0.19 0.30 0.007 0.012 K1 0.19 0.25 0.007 0.010 L 6.40 BSC 0.252 BSC M 0_ 8_ 0_ 8_ SOLDERING FOOTPRINT* 7.06 1 0.65 PITCH 16X 0.36 16X 1.26 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 8 74LVC244A PACKAGE DIMENSIONS QFN20, 2.5x4.5 MM CASE 485AA ISSUE B D A ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ PIN ONE REFERENCE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. B DIM A A1 A3 b D D2 E E2 e K L E 2X 0.15 C 2X 0.15 C TOP VIEW 0.10 C A 20X 0.08 C (A3) A1 SIDE VIEW C SEATING PLANE D2 e 11 20X L 9 12 e E2 20X b 0.10 C A B 0.05 C NOTE 3 19 2 1 20 20X K BOTTOM VIEW www.onsemi.com 9 MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.20 0.30 2.50 BSC 0.85 1.15 4.50 BSC 2.85 3.15 0.50 BSC 0.20 --0.35 0.45 74LVC244A PACKAGE DIMENSIONS QFN20, 2.5x3.5, 0.4P CASE 485CB ISSUE O PIN ONE REFERENCE L B ÉÉÉ ÉÉÉ ÉÉÉ 2X DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS E DIM A A1 A3 b D D2 E E2 e L L1 ÇÇÇ ÉÉÉ ÉÉÉ EXPOSED Cu 0.15 C L L1 0.15 C 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. A D TOP VIEW MOLD CMPD DETAIL B ALTERNATE CONSTRUCTIONS A DETAIL B MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.15 0.25 2.50 BSC 0.90 1.10 3.50 BSC 2.00 2.20 0.40 BSC 0.35 0.45 --0.15 (A3) 0.10 C A1 0.08 C NOTE 4 C SIDE VIEW SEATING PLANE SOLDERING FOOTPRINT* 3.80 0.10 C A B 2.24 D2 20X PACKAGE OUTLINE L 9 12 0.10 C A B DETAIL A 20X 2.80 1.14 E2 1 20X 2 19 1 0.63 b 0.10 C A B 0.05 C 0.40 PITCH NOTE 3 20X 0.25 DIMENSIONS: MILLIMETERS e *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. e/2 BOTTOM VIEW ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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