NLAS3699B

NLAS3699B
Dual DPDT Ultra−Low RON
Switch
The NLAS3699B is a dual independent ultra−low RON DPDT
analog switch. This device is designed for low operating voltage, high
current switching of speaker output for cell phone applications. It can
switch a balanced stereo output. The NLAS3699B can handle a
balanced microphone/speaker/ring−tone generator in a monophone
mode. The device contains a break−before−make feature.
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MARKING
DIAGRAMS
Features
•
•
•
•
QFN−16
CASE 485AE
1.65 to 4.5 V VCC
Function Directly from LiON Battery
Maximum Breakdown Voltage: 5.5 V
Tiny 3 x 3 mm QFN Pb−Free Package
Meet JEDEC MO−220 Specifications
Low Static Power
This is a Pb−Free Device*
1
Cell Phone Speaker/Microphone Switching
Ringtone−Chip/Amplifier Switching
Four Unbalanced (Single−Ended) Switches
Stereo Balanced (Push−Pull) Switching
D1
16
Important Information
• ESD Protection:
•
•
•
1
NLAB
3699
ALYWG
G
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
Typical Applications
•
•
•
•
ÇÇ
ÇÇ
16
• Single Supply Operation
HBM (Human Body Model) > 8000 V
MM (Machine Model) > 400 V
Continuous Current Rating Through each Switch ±300 mA
Conforms to: JEDEC MO−220, Issue H, Variation VEED−6
Pin for Pin Compatible with STG3699
1S1 Vcc 4S2
15
14
13
1S2
1
12
D4
1−2IN
2
11
4S1
2S1
3
10
3−4IN
D2
4
9
3S2
5
6
7
2S2 GND 3S1
8
D3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 0
1
Publication Order Number:
NLAS3699B/D
NLAS3699B
D
S2
S1
IN
Figure 1. Input Equivalent Circuit
PIN DESCRIPTION
QFN PIN #
Symbol
Name and Function
1, 3, 5, 7, 9, 11, 13, 15
1S1 to 4S1, 1S2 to 4S2
2, 10
1−2IN, 3−4IN
4, 8, 12, 16
D1 to D4
6
GND
Ground (V)
14
VCC
Positive Supply Voltage
Independent Channels
Controls
Common Channels
TRUTH TABLE
IN
S1
S2
H
ON
OFF(*)
L
OFF(*)
ON
*High impedance.
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2
NLAS3699B
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
*0.5 to )5.5
V
VCC
Positive DC Supply Voltage
VIS
Analog Input Voltage (VNO, VNC, or VCOM)
*0.5 v VIS v VCC
V
VIN
Digital Select Input Voltage
*0.5 v VI v)5.5
V
Ianl1
Continuous DC Current from COM to NC/NO
$300
mA
Ianl−pk 1
Peak Current from COM to NC/NO, 10 duty cycle (Note 1)
$500
mA
Iclmp
Continuous DC Current into COM/NO/NC with respect to VCC or GND
$100
mA
tr, tf
Input Rise or Fall Time, SELECT
VCC = 1.6 V − 2.7 V
VCC = 3.0 V − 4.5 V
0
0
20
10
ns/V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Defined as 10% ON, 90% off duty cycle.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage
1.65
4.5
V
VIN
Digital Select Input Voltage
GND
VCC
V
VIS
Analog Input Voltage (NC, NO, COM)
GND
VCC
V
TA
Operating Temperature Range
*40
)85
°C
tr, tf
Input Rise or Fall Time, SELECT
0
0
20
10
ns/V
VCC = 1.6 V − 2.7 V
VCC = 3.0 V − 4.5 V
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3
NLAS3699B
DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND)
Guaranteed Limit
Symbol
Parameter
Condition
VCC
*405C to 255C
t855C
Unit
VIH
Minimum High−Level Input
Voltage, Select Inputs
1.8
2.5
3.6
4.3
1.2
1.7
2.2
2.6
1.2
1.7
2.2
2.6
V
VIL
Maximum Low−Level Input
Voltage, Select Inputs
1.8
2.5
3.6
4.3
0.4
0.5
0.7
0.9
0.4
0.5
0.7
0.9
V
IIN
Maximum Input Leakage
Current, Select Inputs
VIN = VCC or GND
4.3
$0.1
$1.0
A
IOFF
Power Off Leakage Current
VIN = VCC or GND
0
$0.5
$2.0
A
ICC
Maximum Quiescent Supply
Current (Note 2)
Select and VIS = VCC or GND
1.65 to 4.5
$1.0
$2.0
A
DC ELECTRICAL CHARACTERISTICS − Analog Section
Guaranteed Maximum Limit
−405C to 255C
Symbol
Parameter
Condition
VCC
Min
Max
t855C
Min
Max
Unit
RON
NC/NO On−Resistance
(Note 2)
VIN v VIL or VIN w VIH
VIS = GND to VCC
IINI v 100 mA
2.5
3.0
4.3
0.65
0.6
0.55
0.75
0.75
0.70
RFLAT
NC/NO On−Resistance Flatness
(Notes 2, 4)
ICOM = 100 mA
VIS = 0 to VCC
2.5
3.0
4.3
0.15
0.15
0.15
0.15
0.15
0.15
RON
On−Resistance Match Between Channels
(Notes 2 and 3)
VIS = 1.3 V;
ICOM = 100 mA
VIS = 1.5 V;
ICOM = 100 mA
VIS = 2.2 V;
ICOM = 100 mA
2.5
0.06
0.06
3.0
0.05
0.05
4.3
0.05
0.05
INC(OFF)
INO(OFF)
NC or NO Off Leakage Current (Note 2)
VIN = VIL or VIH
VNO or VNC = 0.3 V
VCOM = 4.0 V
4.3
−10
10
−100
100
nA
ICOM(ON)
COM ON
Leakage Current
(Note 2)
VIN = VIL or VIH
VNO 0.3 V or 4.0 V with
VNC floating or
VNC 0.3 V or 4.0 V with
VNO floating
VCOM = 0.3 V or 4.0 V
4.3
−10
10
−100
100
nA
2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.
3. RON = RON(MAX) − RON(MIN) between nS1 or nS2.
4. Flatness is defined as the difference between the maximum and minimum value of on−resistance as measured over the specified analog
signal ranges.
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4
NLAS3699B
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Guaranteed Maximum Limit
Symbol
Parameter
Test Conditions
VCC
(V)
VIS
(V)
*405C to 255C
Min
Typ*
Max
t855C
Min
Max
Unit
tON
Turn−On Time
RL = 50 CL = 35 pF
(Figures 3 and 4)
2.3 − 4.5
1.5
50
60
ns
tOFF
Turn−Off Time
RL = 50 CL = 35 pF
(Figures 3 and 4)
2.3 − 4.5
1.5
30
40
ns
tBBM
Minimum Break−Before−Make Time
VIS = 3.0
RL = 50 CL = 35 pF
(Figure 2)
3.0
1.5
ns
2
15
Typical @ 25, VCC = 4.5 V
CIN
Control Pin Input Capacitance
7.0
pF
CSN
SN Port Capacitance
72
pF
CD
D Port Capacitance When Switch is Enabled
230
pF
*Typical Characteristics are at 25°C.
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
Symbol
Parameter
Condition
255C
VCC
(V)
Typical
Unit
BW
Maximum On−Channel −3dB
Bandwidth or Minimum Frequency
Response (Figure 12)
VIN centered between VCC and GND
(Figure 5)
1.65 − 4.5
20
MHz
VONL
Maximum Feed−through On Loss
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND (Figure 5)
1.65 − 4.5
−0.06
dB
VISO
Off−Channel Isolation (Figure 13)
f = 100 kHz; VIS = 1 V RMS; CL = 5 pF
VIN centered between VCC and GND(Figure 5)
1.65 − 4.5
−62
dB
Q
Charge Injection Select Input to
Common I/O (Figure 8)
VIN = VCC to GND, RIS = 0 , CL = 1 nF
Q = CL x VOUT (Figure 6)
1.65 − 4.5
50
pC
THD
Total Harmonic Distortion THD +
Noise (Figure 7)
FIS = 20 Hz to 20 kHz, RL = Rgen = 600 , CL = 50 pF
VIS = 2 VPP
4.5
0.01
%
VCT
Channel−to−Channel Crosstalk
f = 100 kHz; VIS = 1 V RMS, CL = 5 pF, RL = 50 VIN centered between VCC and GND (Figure 5)
1.65 − 4.5
−62
dB
5. Off−Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch.
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5
NLAS3699B
VCC
DUT
VCC
Input
Output
GND
VOUT
0.1 F
50 tBMM
35 pF
90%
90% of VOH
Output
Switch Select Pin
GND
Figure 2. tBBM (Time Break−Before−Make)
VCC
Input
DUT
VCC
0.1 F
50%
Output
VOUT
Open
50%
0V
50 VOH
90%
35 pF
90%
Output
VOL
Input
tON
tOFF
Figure 3. tON/tOFF
VCC
VCC
Input
DUT
Output
50 50%
VOUT
Open
50%
0V
VOH
35 pF
Output
10%
VOL
Input
tOFF
Figure 4. tON/tOFF
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6
10%
tON
NLAS3699B
50 DUT
Reference
Transmitted
Input
Output
50 Generator
50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is
the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction.
ǒVVOUT
Ǔ for VIN at 100 kHz
IN
VOUT
Ǔ for VIN at 100 kHz to 50 MHz
VONL = On Channel Loss = 20 Log ǒ
VIN
VISO = Off Channel Isolation = 20 Log
Bandwidth (BW) = the frequency 3 dB below VONL
VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 Figure 5. Off Channel Isolation/On Channel Loss (BW)/Crosstalk
(On Channel to Off Channel)/VONL
DUT
VCC
VIN
Output
Open
GND
CL
Output
Off
Off
On
VIN
VOUT
Figure 6. Charge Injection: (Q)
1
CHARGE INJECTION “Q” (pC)
5
THD (%)
0.1
0.01
3.6 V
0.001
10
0
3.0 V
2.5 V
−5
1.65 V
−10
−15
−20
−25
−30
100
1000
10000
100000
0
FREQUENCY (Hz)
0.5
1
1.5
2
2.5
3
3.5
4
4.5
VIN (V)
Figure 7. Total Harmonic Distortion Plus Noise
Versus Frequency
Figure 8. Charge Injection versus Vis
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7
5
NLAS3699B
2
1.2
1.6
1.8 V
85°C
1.2
0.8
25°C
RON ()
RON ()
0.8
2.5 V
0.4
3.6 V
3.0 V
−40°C
0.4
0
0.0
0.5
1.5
1.0
2.0
2.5
3.0
3.5
4.0
4.5
0
0.0
5.0
1.0
1.5
2.0
2.5
VIN (V)
Figure 9. On−Resistance vs. COM Voltage
Figure 10. RON vs. VIN vs. Temperature
@ VCC = 3.0 V
3.0
0
0.8
−2
85°C
0.7
−4
25°C
0.6
−6
0.5
0.4
POUT (dB)
RON ()
0.5
VCOM (V)
−8
−10
−40°C
−12
0.3
−14
0.2
−16
0.1
−18
0.0
0.0
−20
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
1
VIN (V)
10
100
1000
FREQUENCY (MHz)
Figure 11. RON vs. VIN vs. Temperature
@ VCC = 3.6 V
Figure 12. Bandwidth vs. Frequency
@ VCC = 1.65 V to 3.6 V
40
0
30
−10
20
PHASE (deg)
POUT (dB)
−20
−30
−40
−50
10
0
−10
−20
−30
−60
−70
0.1
−40
1
10
100
−50
0.1
1000
1
10
100
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 13. Off−Isolation vs. Frequency
@ VCC = 1.65 V to 3.6 V
Figure 14. Phase Angle vs. Frequency
@ VCC = 1.65 V to 3.6 V
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8
1000
NLAS3699B
DEVICE ORDERING INFORMATION
Device Nomenclature
Device Order
Number
Circuit
Indicator
Technology
Device
Function
Package
Suffix
Tape & Reel
Suffix
NLAS3699BMN1R2G
NL
AS
3699B
MN1
R2G
Package Type
Tape & Reel Size†
QFN
(Pb−Free)
3000 Unit / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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9
NLAS3699B
PACKAGE DIMENSIONS
QFN−16 (3 x 3 x 0.85 mm)
CASE 485AE−01
ISSUE O
D
PIN 1
LOCATION
A
B
ÇÇ
ÇÇ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.25 AND 0.30 MM FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
5. OUTLINE MEETS JEDEC DIMENSIONS PER
MO−220, VARIATION VEED−6.
E
DIM
A
A1
A3
b
D
D2
E
E2
e
K
L
0.15 C
TOP VIEW
0.15 C
(A3)
0.10 C
A
16 X
0.08 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.800 0.900 1.000
0.000 0.025 0.050
0.200 REF
0.180 0.250 0.300
3.00 BSC
1.250
1.40 1.550
3.00 BSC
1.250
1.40 1.550
0.500 BSC
0.200
−−−
−−−
0.300 0.400 0.500
SEATING
PLANE
A1
C
D2
16X
e
L
5
NOTE 5
4
16X
EXPOSED PAD
8
9
E2
K
12
1
16
16X
0.10 C A B
0.05 C
13
b
BOTTOM VIEW
NOTE 3
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
Literature Distribution Center for ON Semiconductor
USA/Canada
P.O. Box 61312, Phoenix, Arizona 85082−1312 USA
Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051
Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada
Phone: 81−3−5773−3850
Email: [email protected]
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10
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Order Literature: http://www.onsemi.com/litorder
For additional information, please contact your
local Sales Representative.
NLAS3699B/D