NLAS3699B Dual DPDT Ultra−Low RON Switch The NLAS3699B is a dual independent ultra−low RON DPDT analog switch. This device is designed for low operating voltage, high current switching of speaker output for cell phone applications. It can switch a balanced stereo output. The NLAS3699B can handle a balanced microphone/speaker/ring−tone generator in a monophone mode. The device contains a break−before−make feature. http://onsemi.com MARKING DIAGRAMS Features • • • • QFN−16 CASE 485AE 1.65 to 4.5 V VCC Function Directly from LiON Battery Maximum Breakdown Voltage: 5.5 V Tiny 3 x 3 mm QFN Pb−Free Package Meet JEDEC MO−220 Specifications Low Static Power This is a Pb−Free Device* 1 Cell Phone Speaker/Microphone Switching Ringtone−Chip/Amplifier Switching Four Unbalanced (Single−Ended) Switches Stereo Balanced (Push−Pull) Switching D1 16 Important Information • ESD Protection: • • • 1 NLAB 3699 ALYWG G A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) Typical Applications • • • • ÇÇ ÇÇ 16 • Single Supply Operation HBM (Human Body Model) > 8000 V MM (Machine Model) > 400 V Continuous Current Rating Through each Switch ±300 mA Conforms to: JEDEC MO−220, Issue H, Variation VEED−6 Pin for Pin Compatible with STG3699 1S1 Vcc 4S2 15 14 13 1S2 1 12 D4 1−2IN 2 11 4S1 2S1 3 10 3−4IN D2 4 9 3S2 5 6 7 2S2 GND 3S1 8 D3 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 0 1 Publication Order Number: NLAS3699B/D NLAS3699B D S2 S1 IN Figure 1. Input Equivalent Circuit PIN DESCRIPTION QFN PIN # Symbol Name and Function 1, 3, 5, 7, 9, 11, 13, 15 1S1 to 4S1, 1S2 to 4S2 2, 10 1−2IN, 3−4IN 4, 8, 12, 16 D1 to D4 6 GND Ground (V) 14 VCC Positive Supply Voltage Independent Channels Controls Common Channels TRUTH TABLE IN S1 S2 H ON OFF(*) L OFF(*) ON *High impedance. http://onsemi.com 2 NLAS3699B MAXIMUM RATINGS Symbol Parameter Value Unit *0.5 to )5.5 V VCC Positive DC Supply Voltage VIS Analog Input Voltage (VNO, VNC, or VCOM) *0.5 v VIS v VCC V VIN Digital Select Input Voltage *0.5 v VI v)5.5 V Ianl1 Continuous DC Current from COM to NC/NO $300 mA Ianl−pk 1 Peak Current from COM to NC/NO, 10 duty cycle (Note 1) $500 mA Iclmp Continuous DC Current into COM/NO/NC with respect to VCC or GND $100 mA tr, tf Input Rise or Fall Time, SELECT VCC = 1.6 V − 2.7 V VCC = 3.0 V − 4.5 V 0 0 20 10 ns/V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Defined as 10% ON, 90% off duty cycle. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit VCC DC Supply Voltage 1.65 4.5 V VIN Digital Select Input Voltage GND VCC V VIS Analog Input Voltage (NC, NO, COM) GND VCC V TA Operating Temperature Range *40 )85 °C tr, tf Input Rise or Fall Time, SELECT 0 0 20 10 ns/V VCC = 1.6 V − 2.7 V VCC = 3.0 V − 4.5 V http://onsemi.com 3 NLAS3699B DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Condition VCC *405C to 255C t855C Unit VIH Minimum High−Level Input Voltage, Select Inputs 1.8 2.5 3.6 4.3 1.2 1.7 2.2 2.6 1.2 1.7 2.2 2.6 V VIL Maximum Low−Level Input Voltage, Select Inputs 1.8 2.5 3.6 4.3 0.4 0.5 0.7 0.9 0.4 0.5 0.7 0.9 V IIN Maximum Input Leakage Current, Select Inputs VIN = VCC or GND 4.3 $0.1 $1.0 A IOFF Power Off Leakage Current VIN = VCC or GND 0 $0.5 $2.0 A ICC Maximum Quiescent Supply Current (Note 2) Select and VIS = VCC or GND 1.65 to 4.5 $1.0 $2.0 A DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Maximum Limit −405C to 255C Symbol Parameter Condition VCC Min Max t855C Min Max Unit RON NC/NO On−Resistance (Note 2) VIN v VIL or VIN w VIH VIS = GND to VCC IINI v 100 mA 2.5 3.0 4.3 0.65 0.6 0.55 0.75 0.75 0.70 RFLAT NC/NO On−Resistance Flatness (Notes 2, 4) ICOM = 100 mA VIS = 0 to VCC 2.5 3.0 4.3 0.15 0.15 0.15 0.15 0.15 0.15 RON On−Resistance Match Between Channels (Notes 2 and 3) VIS = 1.3 V; ICOM = 100 mA VIS = 1.5 V; ICOM = 100 mA VIS = 2.2 V; ICOM = 100 mA 2.5 0.06 0.06 3.0 0.05 0.05 4.3 0.05 0.05 INC(OFF) INO(OFF) NC or NO Off Leakage Current (Note 2) VIN = VIL or VIH VNO or VNC = 0.3 V VCOM = 4.0 V 4.3 −10 10 −100 100 nA ICOM(ON) COM ON Leakage Current (Note 2) VIN = VIL or VIH VNO 0.3 V or 4.0 V with VNC floating or VNC 0.3 V or 4.0 V with VNO floating VCOM = 0.3 V or 4.0 V 4.3 −10 10 −100 100 nA 2. Guaranteed by design. Resistance measurements do not include test circuit or package resistance. 3. RON = RON(MAX) − RON(MIN) between nS1 or nS2. 4. Flatness is defined as the difference between the maximum and minimum value of on−resistance as measured over the specified analog signal ranges. http://onsemi.com 4 NLAS3699B AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Maximum Limit Symbol Parameter Test Conditions VCC (V) VIS (V) *405C to 255C Min Typ* Max t855C Min Max Unit tON Turn−On Time RL = 50 CL = 35 pF (Figures 3 and 4) 2.3 − 4.5 1.5 50 60 ns tOFF Turn−Off Time RL = 50 CL = 35 pF (Figures 3 and 4) 2.3 − 4.5 1.5 30 40 ns tBBM Minimum Break−Before−Make Time VIS = 3.0 RL = 50 CL = 35 pF (Figure 2) 3.0 1.5 ns 2 15 Typical @ 25, VCC = 4.5 V CIN Control Pin Input Capacitance 7.0 pF CSN SN Port Capacitance 72 pF CD D Port Capacitance When Switch is Enabled 230 pF *Typical Characteristics are at 25°C. ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol Parameter Condition 255C VCC (V) Typical Unit BW Maximum On−Channel −3dB Bandwidth or Minimum Frequency Response (Figure 12) VIN centered between VCC and GND (Figure 5) 1.65 − 4.5 20 MHz VONL Maximum Feed−through On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 5) 1.65 − 4.5 −0.06 dB VISO Off−Channel Isolation (Figure 13) f = 100 kHz; VIS = 1 V RMS; CL = 5 pF VIN centered between VCC and GND(Figure 5) 1.65 − 4.5 −62 dB Q Charge Injection Select Input to Common I/O (Figure 8) VIN = VCC to GND, RIS = 0 , CL = 1 nF Q = CL x VOUT (Figure 6) 1.65 − 4.5 50 pC THD Total Harmonic Distortion THD + Noise (Figure 7) FIS = 20 Hz to 20 kHz, RL = Rgen = 600 , CL = 50 pF VIS = 2 VPP 4.5 0.01 % VCT Channel−to−Channel Crosstalk f = 100 kHz; VIS = 1 V RMS, CL = 5 pF, RL = 50 VIN centered between VCC and GND (Figure 5) 1.65 − 4.5 −62 dB 5. Off−Channel Isolation = 20log10 (Vcom/Vno), Vcom = output, Vno = input to off switch. http://onsemi.com 5 NLAS3699B VCC DUT VCC Input Output GND VOUT 0.1 F 50 tBMM 35 pF 90% 90% of VOH Output Switch Select Pin GND Figure 2. tBBM (Time Break−Before−Make) VCC Input DUT VCC 0.1 F 50% Output VOUT Open 50% 0V 50 VOH 90% 35 pF 90% Output VOL Input tON tOFF Figure 3. tON/tOFF VCC VCC Input DUT Output 50 50% VOUT Open 50% 0V VOH 35 pF Output 10% VOL Input tOFF Figure 4. tON/tOFF http://onsemi.com 6 10% tON NLAS3699B 50 DUT Reference Transmitted Input Output 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔ for VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log ǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 Figure 5. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off Off On VIN VOUT Figure 6. Charge Injection: (Q) 1 CHARGE INJECTION “Q” (pC) 5 THD (%) 0.1 0.01 3.6 V 0.001 10 0 3.0 V 2.5 V −5 1.65 V −10 −15 −20 −25 −30 100 1000 10000 100000 0 FREQUENCY (Hz) 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VIN (V) Figure 7. Total Harmonic Distortion Plus Noise Versus Frequency Figure 8. Charge Injection versus Vis http://onsemi.com 7 5 NLAS3699B 2 1.2 1.6 1.8 V 85°C 1.2 0.8 25°C RON () RON () 0.8 2.5 V 0.4 3.6 V 3.0 V −40°C 0.4 0 0.0 0.5 1.5 1.0 2.0 2.5 3.0 3.5 4.0 4.5 0 0.0 5.0 1.0 1.5 2.0 2.5 VIN (V) Figure 9. On−Resistance vs. COM Voltage Figure 10. RON vs. VIN vs. Temperature @ VCC = 3.0 V 3.0 0 0.8 −2 85°C 0.7 −4 25°C 0.6 −6 0.5 0.4 POUT (dB) RON () 0.5 VCOM (V) −8 −10 −40°C −12 0.3 −14 0.2 −16 0.1 −18 0.0 0.0 −20 0.1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1 VIN (V) 10 100 1000 FREQUENCY (MHz) Figure 11. RON vs. VIN vs. Temperature @ VCC = 3.6 V Figure 12. Bandwidth vs. Frequency @ VCC = 1.65 V to 3.6 V 40 0 30 −10 20 PHASE (deg) POUT (dB) −20 −30 −40 −50 10 0 −10 −20 −30 −60 −70 0.1 −40 1 10 100 −50 0.1 1000 1 10 100 FREQUENCY (MHz) FREQUENCY (MHz) Figure 13. Off−Isolation vs. Frequency @ VCC = 1.65 V to 3.6 V Figure 14. Phase Angle vs. Frequency @ VCC = 1.65 V to 3.6 V http://onsemi.com 8 1000 NLAS3699B DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number Circuit Indicator Technology Device Function Package Suffix Tape & Reel Suffix NLAS3699BMN1R2G NL AS 3699B MN1 R2G Package Type Tape & Reel Size† QFN (Pb−Free) 3000 Unit / Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 9 NLAS3699B PACKAGE DIMENSIONS QFN−16 (3 x 3 x 0.85 mm) CASE 485AE−01 ISSUE O D PIN 1 LOCATION A B ÇÇ ÇÇ NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. OUTLINE MEETS JEDEC DIMENSIONS PER MO−220, VARIATION VEED−6. E DIM A A1 A3 b D D2 E E2 e K L 0.15 C TOP VIEW 0.15 C (A3) 0.10 C A 16 X 0.08 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.800 0.900 1.000 0.000 0.025 0.050 0.200 REF 0.180 0.250 0.300 3.00 BSC 1.250 1.40 1.550 3.00 BSC 1.250 1.40 1.550 0.500 BSC 0.200 −−− −−− 0.300 0.400 0.500 SEATING PLANE A1 C D2 16X e L 5 NOTE 5 4 16X EXPOSED PAD 8 9 E2 K 12 1 16 16X 0.10 C A B 0.05 C 13 b BOTTOM VIEW NOTE 3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800−282−9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Phone: 81−3−5773−3850 Email: [email protected] http://onsemi.com 10 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NLAS3699B/D