NLAST9431 Low Voltage Single Supply Dual DPDT Analog Switch The NLAST9431 is an advanced CMOS dual−independent DPDT (double pole−double throw) analog switch, fabricated with silicon gate CMOS technology. It achieves high−speed propagation delays and low ON resistances while maintaining CMOS low−power dissipation. This DPDT controls analog and digital voltages that may vary across the full power−supply range (from VCC to GND). The device has been designed so the ON resistance (RON) is much lower and more linear over input voltage than RON of typical CMOS analog switches. The channel−select input structure provides protection when voltages between 0 V and 5.5 V are applied, regardless of the supply voltage. This input structure helps prevent device destruction caused by supply voltage − input/output voltage mismatch, battery backup, hot insertion, etc. The NLAST9431 can also be used as a quad 2−to−1 multiplexer− demultiplexer analog switch with two Select pins that each controls two multiplexer−demultiplexers. • • • • • • • • • • Select Pins Compatible with TTL Levels http://onsemi.com MARKING DIAGRAMS ÎÎ ÎÎ 16 1 WQFN16 CASE 488AP BB M G BB M G = Specific Device Code = Date Code & Assembly Location = Pb−Free Device Channel Select Input Overvoltage Tolerant to 5.5 V ORDERING INFORMATION Fast Switching and Propagation Speeds See detailed ordering and shipping information in the package dimensions section on page 10 of this data sheet. Break−Before−Make Circuitry Low Power Dissipation: ICC = 2 A (Max) at TA = 25°C Diode Protection Provided on Channel Select Input Improved Linearity and Lower ON Resistance over Input Voltage Latch−up Performance Exceeds 300 mA Chip Complexity: 158 FETs Pb−Free Packages are Available © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 2 1 Publication Order Number: NLAST9431/D NLAST9431 QFN−16 PACKAGE COM A NO A0 VCC NC D1 1 2 3 NC B1 GND NO C0 COM C 4 COM A 2 16 VCC COM B SELECT CD COM C 14 3 COM D 13 NO D0 5 12 SELECT CD COM B 6 11 NC C1 NC B1 7 10 COM C GND 8 9 NO C0 ELECT AB 4 NO B0 NC A1 2 NO B0 2/3 3 NC B1 X1 0 NO C0 1 NC C1 2 NO D0 3 NC D1 0/1 COM D U NC A1 1 0/1 NC D1 U 15 NO A0 U 1 0 U NO A0 U COM A U TSSOP−16 PACKAGE X1 U 5 6 7 8 SELECT AB U NC C1 NC to COM NO to COM U SCD L H U NO D0 ON Channel U See TSSOP−16 Switch Configuration COM D Select AB or CD U 13 9 COM B 14 10 NO B0 15 11 SAB 16 12 NC A1 FUNCTION TABLE 2/3 Figure 2. IEC Logic Symbol Figure 1. Logic Diagram http://onsemi.com 2 NLAST9431 MAXIMUM RATINGS Symbol Parameter VCC Positive DC Supply Voltage VIS Analog Input Voltage (VNO or VCOM) VIN Digital Select Input Voltage IIK DC Current, Into or Out of Any Pin PD Power Dissipation in Still Air TSTG Storage Temperature Range TL Value Unit *0.5 to )7.0 V *0.5 ≤ VIS ≤ VCC )0.5 V *0.5 ≤ VI ≤ )7.0 V $50 mA 800 450 mW *65 to )150 °C Lead Temperature, 1 mm from Case for 10 Seconds 260 °C TJ Junction Temperature Under Bias +150 °C MSL Moisture Sensitivity FR Flammability Rating ILATCH−UP Latch−Up Performance JA Thermal Resistance QFN−16 TSSOP−16 Level 1 Oxygen Index: 30% − 35% UL−94−VO (0.125 in) Above VCC and Below GND at 125°C (Note 1) QFN−16 TSSOP−16 $300 mA 80 164 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit 2.0 5.5 V VCC DC Supply Voltage VIN Digital Select Input Voltage GND 5.5 V VIS Analog Input Voltage (NC, NO, COM) GND VCC V TA Operating Temperature Range *55 )125 °C tr, tf Input Rise or Fall Time, SELECT 0 0 100 20 ns/V VCC = 3.3 V $ 0.3 V VCC = 5.0 V $ 0.5 V 90 419,300 47.9 100 178,700 20.4 110 79,600 9.4 120 37,000 4.2 130 17,800 2.0 140 8,900 1.0 TJ = 80°C 117.8 TJ = 90°C 1,032,200 TJ = 100°C 80 FAILURE RATE OF PLASTIC = CERAMIC UNTIL INTERMETALLICS OCCUR TJ = 110°C Time, Years TJ = 120°C Time, Hours TJ = 130°C Junction Temperature °C NORMALIZED FAILURE RATE DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES 1 1 10 100 1000 TIME, YEARS Figure 3. Failure Rate vs. Time Junction Temperature http://onsemi.com 3 NLAST9431 DC CHARACTERISTICS − Digital Section (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Condition VCC *555C to 255C t855C t1255C Unit VIH Minimum High−Level Input Voltage, Select Inputs 3.0 4.5 5.5 1.4 2.0 2.0 1.4 2.0 2.0 1.4 2.0 2.0 V VIL Maximum Low−Level Input Voltage, Select Inputs 3.0 4.5 5.5 0.5 0.8 0.8 0.5 0.8 0.8 0.5 0.8 0.8 V IIN Maximum Input Leakage Current VIN = 5.5 V or GND 5.5 $0.2 $2.0 $2.0 A IOFF Power Off Leakage Current, Select Inputs VIN = 5.5 V or GND 0 $10 $10 $10 A ICC Maximum Quiescent Supply Current Select and VIS = VCC or GND 5.5 4.0 4.0 8.0 A DC ELECTRICAL CHARACTERISTICS − Analog Section Guaranteed Limit Symbol Parameter Condition VCC *555C to 255C t855C t1255C Unit RON Maximum “ON” Resistance (Figures 17 − 23) VIN = VIL or VIH VIS = GND to VCC IINI v 10.0 mA 2.5 3.0 4.5 5.5 85 45 30 25 95 50 35 30 105 55 40 35 RFLAT (ON) ON Resistance Flatness (Figures 17 − 23) VIN = VIL or VIH IINI v10.0 mA VIS = 1 V, 2 V, 3.5 V 4.5 4 4 5 INC(OFF) INO(OFF) NO or NC Off Leakage Current (Figure 9) VIN = VIL or VIH VNO or VNC = 1.0 VCOM 4.5 V 5.5 1 10 100 nA ICOM(ON) COM ON Leakage Current (Figure 9) VIN = VIL or VIH VNO 1.0 V or 4.5 V with VNC floating or VNO 1.0 V or 4.5 V with VNO floating VCOM = 1.0 V or 4.5 V 5.5 1 10 100 nA http://onsemi.com 4 NLAST9431 AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns) Guaranteed Maximum Limit Symbol Parameter VCC VIS *555C to 255C t855C t1255C Test Conditions (V) (V) Min Typ* Max Min Max Min Max Unit tON Turn−On Time (Figures 12 and 13) RL = 300 CL = 35 pF (Figures 5 and 6) 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 5 5 2 2 23 16 11 9 35 24 16 14 5 5 2 2 38 27 19 17 5 5 2 2 41 30 22 20 ns tOFF Turn−Off Time (Figures 12 and 13) RL = 300 CL = 35 pF (Figures 5 and 6) 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 1 1 1 1 7 5 4 3 12 10 6 5 1 1 1 1 15 13 9 8 1 1 1 1 18 16 12 11 ns tBBM Minimum Break−Before−Make Time VIS = 3.0 V (Figure 4) RL = 300 CL = 35 pF 2.5 3.0 4.5 5.5 2.0 2.0 3.0 3.0 1 1 1 1 12 11 6 5 1 1 1 1 1 1 1 1 ns *Typical Characteristics are at 25°C. Typical @ 25, VCC = 5.0 V CIN CNO or CNC CCOM C(ON) Maximum Input Capacitance, Select Input Analog I/O (Switch Off) Common I/O (Switch Off) Feedthrough (Switch On) 8 10 10 20 pF ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted) Symbol Parameter Condition VCC Typical V 255C Unit BW Maximum On−Channel *3 dB Bandwidth or Minimum Frequency Response (Figure 11) VIN = 0 dBm VIN centered between VCC and GND (Figure 7) 3.0 4.5 5.5 145 170 175 MHz VONL Maximum Feedthrough On Loss VIN = 0 dBm @ 100 kHz to 50 MHz VIN centered between VCC and GND (Figure 7) 3.0 4.5 5.5 −3 −3 −3 dB VISO Off−Channel Isolation (Figure 10) f = 100 kHz; VIS = 1 V RMS VIN centered between VCC and GND (Figure 7) 3.0 4.5 5.5 −93 −93 −93 dB Q Charge Injection Select Input to Common I/O (Figure 15) VIN = VCC to GND, FIS = 20 kHz tr = tf = 3 ns RIS = 0 , CL = 1000 pF Q = CL * VOUT (Figure 8) 3.0 5.5 1.5 3.0 pC THD Total Harmonic Distortion THD ) Noise (Figure 14) FIS = 20 Hz to 100 kHz, RL = Rgen = 600 , CL = 50 pF VIS = 5.0 VPP sine wave 5.5 0.1 Channel to Channel Crosstalk f = 100 kHz; VIS = 1 V RMS VIN centered between VCC and GND (Figure 7) 5.5 3.0 −90 −90 VCT http://onsemi.com 5 % dB NLAST9431 VCC DUT VCC Input Output GND VOUT 0.1 F 300 tBMM 35 pF 90% 90% of VOH Output Switch Select Pin GND Figure 4. tBBM (Time Break−Before−Make) VCC DUT VCC 0.1 F Input Output 50% VOUT Open 50% 0V 300 VOH 35 pF 90% 90% Output VOL Input tON tOFF Figure 5. tON/tOFF VCC VCC Input DUT Output 50% VOUT Open 50% 0V 300 VOH 35 pF Output 10% VOL Input tOFF Figure 6. tON/tOFF http://onsemi.com 6 10% tON NLAST9431 50 DUT Reference Transmitted Input Output 50 Generator 50 Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss is the bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction. ǒVVOUT Ǔ for VIN at 100 kHz IN VOUT Ǔ for VIN at 100 kHz to 50 MHz VONL = On Channel Loss = 20 Log ǒ VIN VISO = Off Channel Isolation = 20 Log Bandwidth (BW) = the frequency 3 dB below VONL VCT = Use VISO setup and test to all other switch analog input/outputs terminated with 50 Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk (On Channel to Off Channel)/VONL DUT VCC VIN Output Open GND CL Output Off On VIN Figure 8. Charge Injection: (Q) 100 LEAKAGE (nA) 10 1 0.1 ICOM(ON) ICOM(OFF) 0.01 0.001 −55 VCC = 5.0 V INO(OFF) −20 25 70 85 TEMPERATURE (°C) Figure 9. Switch Leakage vs. Temperature http://onsemi.com 7 125 Off VOUT NLAST9431 +15 0 1.0 2.0 −20 +10 Bandwidth (ON−RESPONSE) +5 3.0 −40 4.0 (dB) (dB) Off Isolation −60 VCC = 5.0 V TA = 25°C −80 −100 0.01 0.1 −10 6.0 −15 7.0 −20 8.0 9.0 10.0 0.01 100 200 1 10 FREQUENCY (MHz) 25 20 20 TIME (ns) TIME (ns) 25 15 tON (ns) tOFF (ns) 0 2.5 3 3.5 4 −30 0.1 1 −35 100 300 10 Figure 11. Typical Bandwidth and Phase Shift 30 5 −25 VCC = 5.0 V TA = 25°C FREQUENCY (MHz) 30 10 −5 5.0 Figure 10. Off−Channel Isolation 4.5 VCC = 4.5 V 15 10 tON 5 tOFF 0 −55 5 −40 25 85 125 VCC (VOLTS) Temperature (°C) Figure 12. tON and tOFF vs. VCC at 255C Figure 13. tON and tOFF vs. Temp 1 3.0 VINpp = 3.0 V VCC = 3.6 V 2.5 2.0 Q (pC) THD + NOISE (%) 0 PHASE SHIFT PHASE (°) 0 0.1 VINpp = 5.0 V VCC = 5.5 V VCC = 5 V 1.5 1.0 0.5 VCC = 3 V 0 0.01 1 10 −0.5 0 100 1 2 3 4 FREQUENCY (kHz) VCOM (V) Figure 14. Total Harmonic Distortion Plus Noise vs. Frequency Figure 15. Charge Injection vs. COM Voltage http://onsemi.com 8 5 NLAST9431 100 100 VCC = 2.0 V 10 80 RON () 1 ICC (nA) 0.1 0.01 60 VCC = 2.5 V 40 VCC = 3.0 V 0.001 VCC = 3.0 V VCC = 4.0 V 20 0.0001 VCC = 5.0 V 0.00001 −40 −20 0 20 60 VCC = 5.5 V 80 100 0 0.0 120 80 70 70 60 60 RON () 90 50 40 125°C 30 10 85°C 0.5 40 25°C 20 −55°C 1.0 1.5 2.0 0 0.0 2.5 −55°C 85°C 125°C 0.5 1.0 1.5 VIS (VDC) 2.0 2.5 3.0 VIS (VDC) Figure 18. RON vs Temp, VCC = 2.0 V Figure 19. RON vs. Temp, VCC = 2.5 V 30 50 45 25 40 35 20 30 RON () RON () 6.0 50 30 25°C 20 25 20 125°C 15 15 10 85°C 10 0 0.0 5.0 Figure 17. RON vs. VCC, Temp = 255C 80 5 4.0 Figure 16. ICC vs. Temp, VCC = 3 V and 5 V 90 RON () 3.0 VIS (VDC) 100 0 0.0 2.0 Temperature (°C) 100 10 1.0 −55°C 0.5 5 25°C 1.0 1.5 2.0 2.5 3.0 3.5 0 0.0 25°C 85°C 125°C −55°C 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VIS (VDC) VIS (VDC) Figure 21. RON vs. Temp, VCC = 4.5 V Figure 20. RON vs. Temp, VCC = 3.0 V http://onsemi.com 9 4.5 NLAST9431 25 25 125°C 20 20 RON () RON () 125°C 15 25°C 10 −55°C 85°C 5 0 0.0 15 25°C 10 85°C −55°C 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.0 VIS (VDC) VIS (VDC) Figure 22. RON vs. Temp, VCC = 5.0 V Figure 23. RON vs. Temp, VCC = 5.5 V DEVICE ORDERING INFORMATION Device Nomenclature Device Order Number NLAST9431MTR2G Circuit Indicator Technology Device Function Package Suffix Tape and Reel Suffix NL AST 9431 MT R2G Package Type Shipping† WQFN−16 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *This package is inherently Pb−Free. http://onsemi.com 10 NLAST9431 PACKAGE DIMENSIONS WQFN16, 1.8x2.6, 0.4P CASE 488AP−01 ISSUE B D ÏÏ ÏÏ ÏÏ ÏÏ PIN 1 REFERENCE 2X 2X L A DETAIL A ALTERNATE TERMINAL CONSTRUCTIONS E ÏÏÏ ÎÎ ÏÏ ÏÏÏ ÎÎ EXPOSED Cu 0.15 C B DIM A A1 A3 b D E e L L1 L2 ALTERNATE CONSTRUCTIONS SEATING PLANE A1 A3 MILLIMETERS MIN MAX 0.70 0.80 0.00 0.050 0.20 REF 0.15 0.25 1.80 BSC 2.60 BSC 0.40 BSC 0.30 0.50 0.00 0.15 0.40 0.60 MOUNTING FOOTPRINT* C 0.562 0.0221 8 15 X L 4 A3 A1 0.08 C DETAIL A MOLD CMPD DETAIL B A DETAIL B 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.25 AND 0.30 MM FROM TERMINAL. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. EXPOSED PADS CONNECTED TO DIE FLAG. USED AS TEST CONTACTS. L1 0.15 C 0.10 C L 0.400 0.0157 9 0.225 0.0089 1 e 1 2.900 0.1142 12 16 L2 16 X b 0.463 0.0182 0.10 C A B 0.05 C 1.200 0.0472 NOTE 3 2.100 0.0827 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 11 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your loca Sales Representative NLAST9431/D