HCTS365MS Radiation Hardened Hex Buffer/Line Driver Non-Inverting September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 16 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T16, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) OE1 1 16 VCC A1 2 15 OE2 • Dose Rate Survivability: >1 x 1012 RAD (Si)/s Y1 3 14 A6 • Dose Rate Upset >1010 RAD (Si)/s 20ns Pulse A2 4 13 Y6 • Latch-Up Free Under Any Conditions • Fanout (Over Temperature Range) - Bus Driver Outputs: 15 LSTTL Loads • Military Temperature Range: -55oC to Y2 5 12 A5 A3 6 11 Y5 Y3 7 10 A4 GND 8 9 Y4 +125oC • Significant Power Reduction Compared to LSTTL ICs 16 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F16, LEAD FINISH C TOP VIEW • DC Operating Voltage Range: 4.5V to 5.5V • LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min • Input Current Levels Ii ≤ 5µA @ VOL, VOH OE1 1 16 VCC A1 2 15 OE2 Y1 3 14 A6 Description A2 4 13 Y6 The Intersil HCTS365MS is a Radiation Hardened noninverting hex buffer and line driver with Tri-state outputs. The output enables (OE1 and OE2) control the three-state outputs. If either OE1 or OE2 is high the outputs will be in a High impedance state. For Data, OE1 and OE2 must be Low. Y2 5 12 A5 A3 6 11 Y5 Y3 7 10 A4 GND 8 9 Y4 The HCTS365MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE HCTS365DMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead SBDIP HCTS365KMSR -55oC to +125oC Intersil Class S Equivalent 16 Lead Ceramic Flatpack HCTS365D/Sample +25oC Sample 16 Lead SBDIP HCTS365K/Sample +25oC Sample 16 Lead Ceramic Flatpack HCTS365HMSR +25oC Die Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 1 Spec Number File Number 518637 3070.1 HCTS365MS Functional Diagram XX ONE OF THE IDENTICAL CIRCUITS 2 1A 3 1Y GND 8 1 4 OE1 2A 15 2A 3 27 6 OE2 7 27 10 2A 9 12 2A 11 14 2A 13 27 27 27 TRUTH TABLE INPUTS OUTPUTS OE1 OE2 A Y L L L L L L H H X H X Z H X X Z Spec Number 2 518637 Specifications HCTS365MS Absolute Maximum Ratings Reliability Information Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance θJA θJC SBDIP Package. . . . . . . . . . . . . . . . . . . . 73oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 114oC/W 29oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.44W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.7mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.8mW/oC CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation. Operating Conditions Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5V (TR, TF) . . . . . . . . . . 500ns Max. Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Low Output Voltage High Input Leakage Current Three-State Output Leakage Current Noise Immunity Functional Test GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 40 µA 2, 3 +125oC, -55oC - 750 µA 1 +25oC 7.2 - mA 2, 3 +125oC, -55oC 6.0 - mA 1 +25oC -7.2 - mA 2, 3 +125oC, -55oC -6.0 - mA VCC = 4.5V, VIH = 2.25V, IOL = 50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 4.5V, VIH = 2.25V, IOH = -50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIH =2.75V, IOH = -50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND 1 +25oC - ±0.5 µA 2, 3 +125oC, -55oC - ±5.0 µA 1 +25oC - ±1 µA 2, 3 +125oC, -55oC - ±50 µA 7, 8A, 8B +25oC, +125oC, -55oC - - - (NOTE 1) CONDITIONS SYMBOL ICC IOL IOH VOL VOH IIN IOZ FN VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0 VCC = 4.5V, VIH = 4.5V, VOUT = VCC - 0.4V, VIL = 0V VCC = 5.5V, Applied Voltage = 0V or VCC VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2) LIMITS NOTES: 1. All voltages referenced to device GND. 2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. Spec Number 3 518637 Specifications HCTS365MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER (NOTES 1, 2) CONDITIONS SYMBOL Data to Output TPLH MIN MAX UNITS 9 +25oC 2 19 ns 10, 11 +125oC, -55oC 2 23 ns 9 +25oC 2 19 ns 10, 11 +125oC, -55oC 2 23 ns 9 +25oC 2 27 ns 10, 11 +125oC, -55oC 2 33 ns 9 +25oC 2 22 ns 10, 11 +125oC, -55oC 2 26 ns 9 +25oC 2 24 ns 10, 11 +125oC, -55oC 2 27 ns 9 +25oC 2 22 ns 10, 11 +125oC, -55oC 2 25 ns VCC = 4.5V TPZL VCC = 4.5V TPZH Disable to Output TEMPERATURE VCC = 4.5V TPHL Enable to Output GROUP A SUBGROUPS VCC = 4.5V TPLZ VCC = 4.5V TPHZ VCC = 4.5V LIMITS NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Capacitance Power Dissipation CPD CONDITIONS NOTES TEMPERATURE MIN MAX UNITS 1 +25oC - 41 pF - 53 pF - 10 pF - 10 pF 12 12 ns 18 18 ns VCC = 5.0V, f = 1MHz 1 Input Capacitance CIN VCC = 5.0V, f = 1MHz 1 1 Output Transition Time TTHL TTLH VCC = 4.5V 1 1 +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Quiescent Current SYMBOL ICC (NOTES 1, 2) CONDITIONS 200K LIMITS RAD TEMPERATURE MIN MAX UNITS VCC = 5.5V, VIN = VCC or GND +25oC - 0.75 mA 6.0 - mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25oC -6.0 - mA Output Voltage Low VOL VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOL = 50µA +25oC - 0.1 V Output Voltage High VOH VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOH = -50µA +25oC VCC -0.1 - V Spec Number 4 518637 Specifications HCTS365MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER (NOTES 1, 2) CONDITIONS SYMBOL Input Leakage Current IIN 200K LIMITS RAD TEMPERATURE MIN MAX UNITS VCC = 5.5V, VIN = VCC or GND +25oC - ±5 µA - ±50 µA Three-State Output Leakage Current IOZ VCC = 5.5V, Applied Voltage = 0V or VCC +25oC Noise Immunity Functional Test FN VCC = 4.5V, VIH = 2.25V, VIL = 0.8V, (Note 3) +25oC - - - Data to Output TPLH VCC = 4.5V +25oC 2 23 ns TPHL Enable to Output TPZL TPZH Disable to Output TPLZ TPHZ o VCC = 4.5V +25 C 2 23 ns VCC = 4.5V +25oC 2 33 ns VCC = 4.5V +25oC 2 26 ns o VCC = 4.5V +25 C 2 27 ns VCC = 4.5V +25oC 2 25 ns NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. 3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP DELTA LIMIT ICC 5 12µA IOL/IOH 5 -15% of 0 Hour IOZL/IOZH 5 ±200nA PARAMETER TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H PDA 100%/5004 1, 7, 9, Deltas Interim Test III (Postburn-In) 100%/5004 1, 7, 9 PDA 100%/5004 1, 7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample/5005 1, 7, 9 Sample/5005 1, 7, 9 Group A (Note 1) Group B Group D READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11, (Note 2) NOTES: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. 2. Table 5 parameters only. Spec Number 5 518637 Specifications HCTS365MS TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1) Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC BURN-IN AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V 50kHz 25kHz - 16 - - - 1, 2, 4, 6, 10, 12, 14, 15, 16 - - 3, 5, 7, 9, 11, 13 16 2, 4, 6, 10, 12, 14 - STATIC BURN-IN I TEST CONNECTIONS (Note 1) 3, 5, 7, 9, 11, 13 1, 2, 4, 6, 8, 10, 12, 14, 15 STATIC BURN-IN II TEST CONNECTIONS (Note 1) 3, 5, 7, 9, 11, 13 8 DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) - 1, 8, 15 NOTES: 1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in. TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V 3, 5, 7, 9, 11, 13 8 1, 2, 4, 6, 10, 12, 14 - 16 NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Spec Number 6 518637 HCTS365MS Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) 100% Interim Electrical Test 1 (T1) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Nondestructive Bond Pull, Method 2023 100% Interim Electrical Test 2 (T2) Sample - Wire Bond Pull Monitor, Method 2011 100% Delta Calculation (T0-T2) Sample - Die Shear Monitor, Method 2019 or 2027 100% PDA 1, Method 5004 (Notes 1and 2) 100% Internal Visual Inspection, Method 2010, Condition A 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Delta Calculation (T0-T1) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Interim Electrical Test 3 (T3) 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% PIND, Method 2020, Condition A 100% Final Electrical Test 100% External Visual 100% Fine/Gross Leak, Method 1014 100% Serialization 100% Radiographic, Method 2012 (Note 3) 100% Initial Electrical Test (T0) 100% External Visual, Method 2009 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. • X-Ray report and film. Includes penetrometer measurements. • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). • Lot Serial Number Sheet (Good units serial number and lot number). • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. Spec Number 7 518637 HCTS365MS AC Timing Diagrams AC Load Circuit VIH DUT TEST POINT INPUT VS VIL CL RL TPLH TPHL VOH VS OUTPUT CL = 50pF VOL RL = 500Ω TTLH VOH TTHL 80% 20% VOL 80% 20% OUTPUT AC VOLTAGE LEVELS PARAMETER HCTS UNITS VCC 4.50 V VIH 3.00 V VS 1.30 V VIL 0 V GND 0 V Three-State Low Timing Diagrams Three-State Low Load Circuit VIH VCC VS INPUT VIL RL TPZL TPLZ VOZ VT TEST POINT DUT VW OUTPUT VOL CL CL = 50pF RL = 500Ω THREE-STATE LOW VOLTAGE LEVELS PARAMETER HCTS UNITS VCC 4.50 V VIH 3.00 V VS 1.30 V VT 1.30 V VW 0.90 V 0 V GND Spec Number 8 518637 HCTS365MS Three-State High Timing Diagrams Three-State High Load Circuit VIH TEST POINT DUT VS INPUT VIL TPZH CL TPHZ RL CL = 50pF RL = 500Ω VOH VT VW OUTPUT VOZ THREE-STATE HIGH VOLTAGE LEVELS PARAMETER HCTS UNITS VCC 4.50 V VIH 3.00 V VS 1.30 V VT 1.30 V VW 3.60 V 0 V GND All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Spec Number 9 518637 HCTS365MS Die Characteristics DIE DIMENSIONS: 108 x 106 mils METALLIZATION: Type: AlSi Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.6kÅ WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 mils x 4 mils Metallization Mask Layout HCTS365MS Y1 (3) A1 (2) OE1 (1) OE2 (15) VCC (16) NC A2 (4) (14) A6 Y2 (5) (13) Y6 NC (12) A5 (11) Y5 A3 (6) NC (7) Y3 (8) GND NC (9) Y4 (10) A4 NOTE: The die diagram is a generic plot form a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCTS365 is TA14413A. Spec Number 10 518637