HCTS540MS Radiation Hardened Inverting Octal Buffer/Line Driver, Three-State September 1995 Features Pinouts • 3 Micron Radiation Hardened CMOS SOS 20 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835 CDIP2-T20, LEAD FINISH C TOP VIEW • Total Dose 200K RAD (Si) • SEP Effective LET No Upsets: >100 MEV-cm2/mg • Single Event Upset (SEU) Immunity < 2 x 10-9 Errors/ Bit-Day (Typ) OE1 1 A0 2 19 OE2 A1 3 18 Y0 A2 4 17 Y1 A3 5 16 Y2 • Latch-Up Free Under Any Conditions A4 6 15 Y3 • Fanout (Over Temperature Range) - Bus Driver Outputs 15 LSTTL Loads A5 7 14 Y4 A6 8 13 Y5 • Military Temperature Range: -55oC to +125oC A7 9 12 Y6 GND 10 11 Y7 • Dose Rate Survivability: >1 x 10 • Dose Rate Upset >10 1012 RAD (Si)/s RAD (Si)/s 20ns Pulse 20 VCC • Significant Power Reduction Compared to LSTTL ICs • DC Operating Voltage Range: 4.5V to 5.5V • LSTTL Input Compatibility - VIL = 0.8V Max - VIH = VCC/2 Min 20 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835 CDFP4-F20, LEAD FINISH C TOP VIEW • Input Current Levels Ii ≤ 5µA at VOL, VOH OE1 1 20 VCC A0 2 19 OE2 A1 3 18 Y0 The Intersil HCTS540MS is a Radiation Hardened inverting Octal Buffer/Line Driver, with two active-low output enables. The output enable pins (OE1 and OE2) control the threestate outputs. If either enable is high the outputs will be in the high impedance state. For data output both enables (OE1 and OE2) must be low. A2 4 17 Y1 A3 5 16 Y2 A4 6 15 Y3 A5 7 14 Y4 A6 8 13 Y5 A7 9 12 Y6 The HCTS540MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. GND 10 11 Y7 Description The HCTS540MS is supplied in a 20 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix). Ordering Information PART NUMBER TEMPERATURE RANGE SCREENING LEVEL PACKAGE HCTS540DMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead SBDIP HCTS540KMSR -55oC to +125oC Intersil Class S Equivalent 20 Lead Ceramic Flatpack HCTS540D/Sample +25oC Sample 20 Lead SBDIP HCTS540K/Sample +25oC Sample 20 Lead Ceramic Flatpack HCTS540HMSR +25oC Die Die CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999 1 Spec Number File Number 518631 2232.2 HCTS540MS Functional Diagram ONE OF 8 BUFFERS A0 2 A INPUTS (2 - 9) 18 Y0 Y OUTPUTS (18 - 11) OE TO OTHER 7 BUFFERS OE1 1 OE2 19 TRUTH TABLE H L X Z OE1 OE2 AN OUTPUT L L L H L L H L H X X Z X H X Z = High Level = Low Level = Don’t Care = High Impedance Spec Number 2 518631 Specifications HCTS540MS Absolute Maximum Ratings Reliability Information Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .±25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10sec) . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 Thermal Resistance θJA θJC SBDIP Package. . . . . . . . . . . . . . . . . . . . 72oC/W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 107oC/W 28oC/W Maximum Package Power Dissipation at +125oC Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W If device power exceeds package dissipation capability, provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/oC CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation. Operating Conditions Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . . 500ns Max. Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . 0.0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . . .VCC/2 to VCC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Low Output Voltage High Input Leakage Current Three-State Output Leakage Current Noise Immunity Functional Test GROUP A SUBGROUPS TEMPERATURE MIN MAX UNITS 1 +25oC - 40 µA 2, 3 +125oC, -55oC - 750 µA 1 +25oC 7.2 - mA 2, 3 +125oC, -55oC 6.0 - mA 1 +25oC -7.2 - mA 2, 3 +125oC, -55oC -6.0 - mA VCC = 4.5V, VIH = 2.25V, IOL = 50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 5.5V, VIH = 2.75V, IOL = 50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC - 0.1 V VCC = 4.5V, VIH = 2.25V, IOH = -50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIH = 2.75V, IOH = -50µA, VIL = 0.8V 1, 2, 3 +25oC, +125oC, -55oC VCC -0.1 - V VCC = 5.5V, VIN = VCC or GND 1 +25oC - ±0.5 µA 2, 3 +125oC, -55oC - ±5.0 µA 1 +25oC - ±1 µA 2, 3 +125oC, -55oC - ±50 µA 7, 8A, 8B +25oC, +125oC, -55oC - - - (NOTE 1) CONDITIONS SYMBOL ICC IOL IOH VOL VOH IIN IOZ FN VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VOUT = VCC - 0.4V, VIL = 0V VCC = 5.5V, Applied Voltage = 0V or VCC VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2) LIMITS NOTES: 1. All voltages referenced to device GND. 2. For functional tests, VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. Spec Number 3 518631 Specifications HCTS540MS TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Data to Output Enable to Output (NOTES 1, 2) CONDITIONS SYMBOL LIMITS TEMPERATURE MIN MAX UNITS TPHL VCC = 4.5V 9 +25oC 2 21 ns TPLH VCC = 4.5V 10, 11 +125oC, -55oC 2 25 ns TPZL VCC = 4.5V 9 +25oC 2 30 ns 10, 11 +125oC, -55oC 2 35 ns 9 +25oC 2 26 ns 10, 11 +125oC, -55oC 2 30 ns 9 +25oC 2 26 ns 10, 11 +125oC, -55oC 2 30 ns TPZH Disable to Output GROUP A SUBGROUPS VCC = 4.5V TPLZ, TPHZ VCC = 4.5V NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER SYMBOL Capacitance Power Dissipation CPD Input Capacitance Output Transition Time CIN TTHL, TTLH CONDITIONS NOTES TEMPERATURE MIN MAX UNITS 1 +25oC - 45 pF 1 +125oC, -55oC - 50 pF 1 +25oC - 10 pF 1 +125oC, -55oC - 10 pF 1 +25oC - 12 ns 1 +125oC, -55oC - 18 ns VCC = 5.0V, f = 1MHz VCC = 5.0V, f = 1MHz VCC = 4.5V NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS PARAMETER Quiescent Current SYMBOL ICC (NOTES 1, 2) CONDITIONS 200K RAD LIMITS TEMPERATURE MIN MAX UNITS VCC = 5.5V, VIN = VCC or GND +25oC - 0.75 mA 6.0 - mA Output Current (Sink) IOL VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V +25oC Output Current (Source) IOH VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V +25oC -6.0 - mA Output Voltage Low VOL VCC = 4.5V or 5.5V, VIH = VCC/2, VIL = 0.8V, IOL = 50µA +25oC - 0.1 V Spec Number 4 518631 Specifications HCTS540MS TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) PARAMETER (NOTES 1, 2) CONDITIONS SYMBOL Output Voltage High VOH 200K RAD LIMITS TEMPERATURE MIN MAX UNITS VCC = 4.5V or 5.5V, VIH = VCC/2, VIL = 0.8V, IOH = -50µA +25oC VCC -0.1 - V Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND +25oC - ±5 µA Three-State Ouptut Leakage Current IOZ VCC = 5.5V, Applied Voltage = 0V or VCC +25oC - ±50 µA Noise Immunity Functional Test FN VCC = 4.5V, VIH = 2.25V, VIL = 0.8V, (Note 3) +25oC - - - Data to Output TPLH, TPHL VCC = 4.5V +25oC 2 25 ns Enable to Output TPZL VCC = 4.5V +25oC 2 35 ns TPZH +25oC 2 30 ns TPLZ, TPHZ +25oC 2 30 ns Disable to Output VCC = 4.5V NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500Ω, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3V. 3. For functional tests VO ≥ 4.0V is recognized as a logic “1”, and VO ≤ 0.5V is recognized as a logic “0”. TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) GROUP B SUBGROUP DELTA LIMIT ICC 5 12µA IOL/IOH 5 -15% of 0 Hour IOZL/IOZH 5 ±200nA PARAMETER TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS METHOD GROUP A SUBGROUPS Initial Test (Preburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test I (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H Interim Test II (Postburn-In) 100%/5004 1, 7, 9 ICC, IOL/H PDA 100%/5004 1, 7, 9, Deltas Interim Test III (Postburn-In) 100%/5004 1, 7, 9 PDA 100%/5004 1, 7, 9, Deltas Final Test 100%/5004 2, 3, 8A, 8B, 10, 11 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11 Subgroup B-5 Sample/5005 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas Subgroup B-6 Sample/5005 1, 7, 9 Sample/5005 1, 7, 9 Group A (Note 1) Group B Group D READ AND RECORD Subgroups 1, 2, 3, 9, 10, 11, (Note 2) NOTES: 1. Alternate Group A testing in accordance with Method 5005 of MIL-STD-883 may be exercised. 2. Table 5 parameters only. Spec Number 5 518631 Specifications HCTS540MS TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUPS READ AND RECORD METHOD PRE RAD POST RAD PRE RAD POST RAD 5005 1, 7, 9 Table 4 1, 9 Table 4 (Note 1) Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. TABLE 8. STATIC BURN-IN AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V ± 0.5V VCC = 6V ± 0.5V 50kHz 25kHz - 20 - - - 1 - 9, 19, 20 - - 11 - 18 20 1, 19 2-9 STATIC BURN-IN I TEST CONNECTIONS (Note 1) 11 - 18 1 - 10, 19 STATIC BURN-IN II TEST CONNECTIONS (Note 1) 11 - 18 10 DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) - 10 NOTES: 1. Each pin except VCC and GND will have a resistor of 10KΩ ± 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 680Ω ± 5% for dynamic burn-in. TABLE 9. IRRADIATION TEST CONNECTIONS OPEN GROUND VCC = 5V ± 0.5V 11 - 18 10 1 - 9, 19, 20 NOTE: Each pin except VCC and GND will have a resistor of 47KΩ ± 5% for irradiation testing. Group E, Subgroup 2, sample size is 4 dice/wafer 0 failures. Spec Number 6 518631 HCTS540MS Intersil Space Level Product Flow - ‘MS’ Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) 100% Interim Electrical Test 1 (T1) GAMMA Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Static Burn-In 2, Condition A or B, 24 hrs. min., +125oC min., Method 1015 100% Nondestructive Bond Pull, Method 2023 100% Interim Electrical Test 2 (T2) Sample - Wire Bond Pull Monitor, Method 2011 100% Delta Calculation (T0-T2) Sample - Die Shear Monitor, Method 2019 or 2027 100% PDA 1, Method 5004 (Notes 1and 2) 100% Internal Visual Inspection, Method 2010, Condition A 100% Dynamic Burn-In, Condition D, 240 hrs., +125oC or Equivalent, Method 1015 100% Delta Calculation (T0-T1) 100% Temperature Cycle, Method 1010, Condition C, 10 Cycles 100% Interim Electrical Test 3 (T3) 100% Constant Acceleration, Method 2001, Condition per Method 5004 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (Note 2) 100% PIND, Method 2020, Condition A 100% Final Electrical Test 100% External Visual 100% Fine/Gross Leak, Method 1014 100% Serialization 100% Radiographic, Method 2012 (Note 3) 100% Initial Electrical Test (T0) 100% External Visual, Method 2009 100% Static Burn-In 1, Condition A or B, 24 hrs. min., +125oC min., Method 1015 Sample - Group A, Method 5005 (Note 4) 100% Data Package Generation (Note 5) NOTES: 1. Failures from Interim electrical test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroup 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A testing may be performed as allowed by MIL-STD-883, Method 5005. 5. Data Package Contents: • Cover Sheet (Intersil Name and/or Logo, P.O. Number, Customer Part Number, Lot Date Code, Intersil Part Number, Lot Number, Quantity). • Wafer Lot Acceptance Report (Method 5007). Includes reproductions of SEM photos with percent of step coverage. • GAMMA Radiation Report. Contains Cover page, disposition, Rad Dose, Lot Number, Test Package used, Specification Numbers, Test equipment, etc. Radiation Read and Record data on file at Intersil. • X-Ray report and film. Includes penetrometer measurements. • Screening, Electrical, and Group A attributes (Screening attributes begin after package seal). • Lot Serial Number Sheet (Good units serial number and lot number). • Variables Data (All Delta operations). Data is identified by serial number. Data header includes lot number and date of test. • The Certificate of Conformance is a part of the shipping invoice and is not part of the Data Book. The Certificate of Conformance is signed by an authorized Quality Representative. Spec Number 7 518631 HCTS540MS AC Timing Diagrams AC Load Circuit VIH DUT INPUT VS TEST POINT VIL CL TPLH RL TPHL VOH VS OUTPUT CL = 50pF VOL RL = 500Ω TTLH VOH TTHL 80% 20% VOL 80% 20% OUTPUT AC VOLTAGE LEVELS PARAMETER HCTS UNITS VCC 4.50 V VIH 3.00 V VS 1.30 V VIL 0 V GND 0 V Three-State Low Timing Diagrams Three-State Low Load Circuit VIH VS INPUT VCC VIL RL TPZL TPLZ VOZ TEST POINT DUT VT VW OUTPUT CL VOL CL = 50pF RL = 500Ω THREE-STATE LOW VOLTAGE LEVELS PARAMETER HCTS UNITS VCC 4.50 V VIH 3.00 V VS 1.30 V VT 1.30 V VW 0.90 V VIL 0 V GND 0 V Spec Number 8 518631 HCTS540MS Three-State High Timing Diagrams Three-State High Load Circuit DUT VIH VS TEST POINT INPUT CL VIL RL TPHZ TPZH VOH VW CL = 50pF VT OUTPUT RL = 500Ω VOZ THREE-STATE HIGH VOLTAGE LEVELS PARAMETER HCTS UNITS VCC 4.50 V VIH 3.00 V VS 1.30 V VT 1.30 V VW 3.60 V VIL 0 V GND 0 V All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Spec Number 9 518631 HCTS540MS Die Characteristics DIE DIMENSIONS: 101 x 85mils METALLIZATION: Type: SiAl Metal Thickness: 11kÅ ± 1kÅ GLASSIVATION: Type: SiO2 Thickness: 13kÅ ± 2.6kÅ WORST CASE CURRENT DENSITY: <2.0 x 105A/cm2 BOND PAD SIZE: 100µm x 100µm 4 mils x 4 mils Metallization Mask Layout HCTS540MS A0 (2) OE1 (1) VCC (20) OE2 (19) (18) Y0 A1 (3) (17) Y1 A2 (4) (16) Y2 A3 (5) (15) Y3 A4 (6) A5 (7) (14) Y4 A6 (8) (13) Y5 (9) A7 (10) GND (11) Y7 (12) Y6 NOTE: The die diagram is a generic plot form a similar HCS device. It is intended to indicate approximate die size and bond pad location. The mask series for the HCTS540 is TA14455A. Spec Number 10 518631