[AK8789] AK8789 Hall Effect Switch Features High sensitive omnipoler operation Dual output Operating supply voltage : 1.6V to 5.5V Micropower operation • Typ.6.5µA (average : VDD=1.85V) Ultra small SON package : 1.1×1.4× t0.37mm Halogen free Block Diagram & Circuit Configuration VDD OSC BIAS VSS Timing logic Output Polarity discriminator buffer OUT1 N Chopper SW CHOP_AMP (N-pole) COMP Hall sensor OUT2 S (S-pole) Figure1.Block diagram Table 1.Circuit configuration Block Hall sensor Chopper SW CHOP_AMP COMP Polarity discriminator Output buffer BIAS OSC Timing logic Function Hall element fabricated by CMOS process Performs chopping in order to cancel the offset voltage of Hall sensor Reduces offset voltage and amplifies Hall output voltage Hysteresis comparator Discriminate the result of south /north pole detection which is sent out from COMP consequently. CMOS output Generates bias current to other circuits Generates operating clock Generates timing signal required for Chopper SW, AMP and COMP MS1445-E-00 -1- July / 2012 [AK8789] Pin/Function No. 1 2 3 4 Pin name VDD VSS OUT2 OUT1 Table 2.Desctiption of pin name and function I/O Function Note − Power supply pin − Ground pin O S pole detection output pin CMOS Output* O N pole detection output pin CMOS Output* *) Unused output pin should be left open. Absolute Maximum Ratings Parameter Power supply voltage Output current Storage temperature Table 3.Absolute maximum ratings Symbol Min. VDD −0.3 IOUT −0.5 TSTG −55 Max. +6.5 +0.5 +125 Unit V mA °C Note: Stresses beyond these listed values may cause permanent damage to the device. Recommended Operating Conditions Parameter Power supply voltage Operating temperature Table 4.Recommended operating conditions Symbol Min. Typ. VDD 1.6 1.85 Ta −30 Max. 5.5 +85 Unit V °C MS1445-E-00 -2- July / 2012 [AK8789] Electrical Characteristics Table 5.Electrical characteristics(Ta=25°C，VDD=1.85V) Parameter Current consumption High level output voltage Low level output voltage Pulse drive period Pulse drive time Symbol IDD VOH VOL TPD1 TPD2 Min. Typ. 6.5 Max. 9 50 146 0.4 100 292 VDD−0.4 25 73 Unit Note µA V V ms µs Average, IOUT=0mA IOUT=−0.5mA IOUT=+0.5mA Magnetic Characteristics (1) Table 6.Magnetic characteristics(Ta=25°C，VDD=1.85V unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Note BopN 1.4 2.5 3.2 mT Operating points BopS −3.2 −2.5 −1.4 mT BrpN 1.2 2.0 3.0 mT Releasing points BrpS −3.0 −2.0 −1.2 mT Hysteresis BhN,BhS 0.1 0.5 mT The values in Table 6 are design specification. Magnetic Characteristics (2) Table 7.Magnetic characteristics (Ta=-30∼85°C，VDD=1.6～5.5V) Symbol Min. Typ. Max. Unit BopN 1.3* 2.5 3.9 mT Operating points BopS −3.9 −2.5 −1.3* mT BrpN 0.9 2.0 3.7* mT Releasing points BrpS −3.7* −2.0 −0.9 mT Hysteresis BhN,BhS 0.1* 0.5 mT Parameter Note The characteristics with * marks are guaranteed by design. MS1445-E-00 -3- July / 2012 [AK8789] Operational Characteristics S or N Package top Package bottom N or S Figure 2.Defintion of sensitivity direction Vout1 Vout2 BrpS BrpN BhN BhS BopN S BopS S N 0 0 N Magnetic flux density Magnetic flux density (b) OUT2 (a) OUT1 Figure 3.Output switching characteristics Note) Positive polarity magnetic flux is defined as the magnetic flux from north pole which is facing the marking face of the package. MS1445-E-00 -4- July / 2012 [AK8789] IDD Timing Chart IDD 50ms(Typ.) 146µs(Typ.) IDDON (Typ=1.8mA) IDD (Typ=6.5µA) IDDOFF (Typ=1.3µA) Time Figure 4.IDD Timing chart Functional Timing Chart IDD IDD t B t B Bop Brp Vout1, Vout2 t t Vout1, Vout2 48.8µs(Typ.) High High Low Low 48.8µs(Typ.) t t Releasing Point Timing Operating Point Timing Figure5. Functional timing chart Note: Hall IC’s output is held as internal data just before the internal circuit turns off. And after 48.8µs (Typ.) the output changes. MS1445-E-00 -5- July / 2012 [AK8789] Typical Characteristic Data (for reference) 6 4 Bop, Brp [mT] BopN 2 BrpN 0 BrpS -2 BopS -4 -6 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Ambient temperature Ta[°C] Bop,Brp vs. Ta (VDD=1.85V) Figure 6.Temperature dependence of sensitivity 18 16 14 VDD=5.5V IDD [µA] 12 10 VDD=3V 8 6 VDD=1.85V 4 2 0 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 Ambient temperature Ta[°C] IDD vs. Ta Ta DD vs. Figure 7.Temperature dependence of current consumption (average) MS1445-E-00 -6- July / 2012 [AK8789] Recommended External Circuit VDD=1.85V CMOS Output (N) VDD 100nF OUT1 AK8789 VSS OUT2 CMOS Output (S) GND Figure 8.Recommended external circuit MS1445-E-00 -7- July / 2012 [AK8789] Package Unit: mm Figure 9.Package dimensions Note 1) Sensitive area position referenced to the center of package within φ0.3mm circle. Note 2) Tolerances of dimension otherwise noted is ±0.05mm. Note 3) Hatched area is plated. Note 4) Center pad area (TAB) should be tied to the VSS or floating Material of terminals : Copper alloy Material of plating : Sn 100% Thickness of plating : 7µm(Typ.) Marking 1 4 Marking is performed by laser Product name : 789 Date code : YML Y : Last one digit of manufactured year（0∼9） M : Manufactured month（1∼9,X,Y,Z） L : Lot(1∼9,A∼Z) 789 YML 2 3 Figure 10.Marking MS1445-E-00 -8- July / 2012 [AK8789] IMPORTANT NOTICE 0. Asahi Kasei Microdevices Corporation (“AKM”) reserves the right to make changes to the information contained in this document without notice. When you consider any use or application of AKM product stipulated in this document (“Product”), please make inquiries the sales office of AKM or authorized distributors as to current status of the Products. 1. All information included in this document are provided only to illustrate the operation and application examples of AKM Products. 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