SHD126111 SHD126111P SHD126111N SHD126111D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4751, REV. B SILICON SCHOTTKY RECTIFIER Ultra Low Reverse Leakage 175C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Symbol VRWM IF(AV) Max. Average Forward Current IF(AV) Max. Peak One Cycle NonRepetitive Surge Current Maximun Thermal Resistence (Per leg) Max. Junction Temperature Max. Storage Temperature IFSM Condition Maximum DC Output Current O (@ TC=100 C) (Single, Doubler) Maximum DC Output Current O (@ TC=100 C) (Common Cathode, Common Anode) 8.3 ms, half Sine wave Max. 30 7.5 Units V A 15 A 75 A RJC - 5.37 C/W TJ Tstg - -65 to +175 -65 to +175 C C Max. 0.58 0.48 1 Units V V mA 50 mA 550 pF Electrical Characteristics Per Leg Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance CT Condition @ 7.5 A, Pulse, TJ = 25 C @ 7.5 A, Pulse, TJ = 125 C @VR = 30 V, Pulse, TJ = 25 C @VR = 30 V, Pulse, TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) 2006 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD126111 SHD126111P SHD126111N SHD126111D SENSITRON TECHNICAL DATA DATASHEET 4751, REV. B Mechanical Dimensions: In Inches / mm .150 (3.81 Dia. .140 3.56) .200 (5.08 .190 4.82) .420 (10.67 .410 10.41) .665 (16.89 .645 16.38) .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) 1 2 .045 (1.14 .035 0.89) .430 (10.92 .410 10.41) 3 .035 (0.89 .025 0.63) 3 Places .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 DEVICE TYPE SINGLE RECTIFIER COMMON CATHODE (P) COMMON ANODE (N) DOUBLER (D) PIN 1 CATHODE ANODE 1 CATHODE 1 ANODE PIN 2 ANODE COMMON CATHODE COMMON ANODE CATHODE / ANODE Typical Forward Characteristics PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE Typical Reverse Characteristics 102 150 °C Instantaneous Reverse Current - I R (mA) 101 100 125 °C 101 100 °C 100 75 °C 10-1 50 °C 25 °C 10-2 125 °C 0 10-1 0.0 0.1 0.2 0.3 0.4 0.5 Forw ard Voltage Drop - V F (V) 10 20 30 Reverse Voltage - V R (V) 40 Typical Junction Capacitance 25 °C 0.6 Junction Capacitance - CT (pF) Instantaneous Forward Current - I F (A) 150 °C 500 450 400 350 300 0 10 20 30 Reverse Voltage - V R (V) 40 2006 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD126111 SHD126111P SHD126111N SHD126111D SENSITRON TECHNICAL DATA DATASHEET 4751, REV. B Note: Vf characteristics are for unpackaged die only. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. 2006 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]