SHD126246 SHD126246D SHD126246N SHD126246P SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4782, REV. C SILICON SCHOTTKY RECTIFIER Low Reverse Leakage 175C Operating Temperature Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Max. Junction Temperature Max. Storage Temperature Thermal Resistance(per leg) Symbol VRWM IF(AV) IF(AV) IFSM TJ Tstg RJC Condition 50% duty cycle, rectangular wave form (Single/Doubler) 50% duty cycle, rectangular wave form (Common Cathode/Common Anode) 8.3 ms, half Sine wave - Max. 200 15 Units V A 15 A 75 A -65 to +175 -65 to +175 2.82 C C C/W Max. 1.01 0.9 0.35 Units V V mA 8.0 mA 300 pF Electrical Characteristics: Characteristics Max. Forward Voltage Drop Max. Reverse Current Symbol VF1 VF2 IR1 IR2 Max. Junction Capacitance CT Condition @ 15A, Pulse, TJ = 25 C @ 15A, Pulse, TJ = 125 C @VR = 200V, Pulse, TJ = 25 C @VR = 200V, Pulse, TJ = 125 C @VR = 5V, TC = 25 C fSIG = 1MHz, VSIG = 50mV (p-p) 2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD126246 SHD126246D SHD126246N SHD126246P TECHNICAL DATA DATA SHEET 4782, REV. C Mechanical Dimensions: In Inches / mm .150 (3.81 Dia. .140 3.56) .665 (16.89 .645 16.38) .537 (13.64 .527 13.39) 1.132 (28.75 1.032 26.21) .200 (5.08 .190 4.82) .420 (10.67 .410 10.41) 1 .035 (0.89 .025 0.63) 3 Places 2 .045 (1.14 .035 0.89) .430 (10.92 .410 10.41) 3 .100(2.54) BSC 2 Places .120(3.05) BSC TO-257 SINGLE 1 2 COMMON CATHODE 3 1 2 COMMON ANODE 1 DEVICE TYPE SINGLE RECTIFIER COMMON CATHODE (P) COMMON ANODE (N) DOUBLER (D) 2 3 PIN 1 3 DOUBLER 1 2 3 PIN 2 CATHODE ANODE 1 CATHODE 1 ANODE ANODE COMMON CATHODE COMMON ANODE CATHODE / ANODE PIN 3 ANODE ANODE 2 CATHODE 2 CATHODE 2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD126246 SHD126246D SHD126246N SHD126246P TECHNICAL DATA DATA SHEET 4782, REV. C Typical Rev erse Characteristics Typical Forw ard Characteristics R (mA) 10 1 Instantaneous Reverse Current - I 10 1 200 °C 10 0 10 175 °C 150 °C 10 -1 125 °C 10 -2 100 °C 75 °C 10 -3 50 °C 10 -4 25 °C 10 -5 125 °C 10 0 40 -1 80 120 160 Reverse Voltage - V R (V) 200 240 Typical Junction Capacitance (pF) Instantaneous Forward Current - I F (A) 175 °C 200 °C 0 Junction Capacitance - C T 25 °C 300 10 -2 0.0 0.2 0.4 0.6 Forward Voltage Drop - V 0.8 F (V) 1.0 240 180 120 60 0 0 40 80 120 160 Reverse Voltage - V R (V) 200 240 Note: The VF curves shown are for the SD125SC200 unpackaged die only. DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall Sensitron Semiconductor be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). Sensitron Semiconductor assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall Sensitron Semiconductor be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of Sensitron Semiconductor. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. 2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]