TEPT4400 Datasheet

TEPT4400
www.vishay.com
Vishay Semiconductors
Ambient Light Sensor
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• High photo sensitivity
• Adapted to human eye responsivity
• Angle of half sensitivity:  = ± 30°
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
20815
DESCRIPTION
APPLICATIONS
TEPT4400 ambient light sensor is a silicon NPN epitaxial
planar phototransistor in a T-1 package. It is sensitive to
visible light much like the human eye and has peak
sensitivity at 570 nm.
• Ambient light sensor for control of display backlight
dimming in LCD displays and keypad backlighting of
mobile devices and in industrial on / off-lighting operation
• Replacement of CdS photoresistors
PRODUCT SUMMARY
COMPONENT
IPCE (μA)
 (deg)
0.5 (nm)
200
± 30
440 to 800
TEPT4400
Note
• Test condition see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
TEPT4400
PACKAGING
REMARKS
PACKAGE FORM
Bulk
MOQ: 5000 pcs, 5000 pcs/bulk. Label with IPCE group
on each bulk. Specifications of group A/B/C see table
“Type Dedicated Characteristics” on page 2
T-1
Note
• MOQ: minimum order quantity
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
SYMBOL
VALUE
UNIT
Collector emitter voltage
TEST CONDITION
VCEO
6
V
Emitter collector voltage
VECO
1.5
V
IC
20
mA
PV
100
mW
°C
Collector current
Power dissipation
Tamb  55 °C
Junction temperature
Tj
100
Operating temperature range
Tamb
-40 to +85
°C
Storage temperature range
Tstg
-40 to +100
°C
t3s
Tsd
260
°C
J-STD-051, soldered on PCB
RthJA
300
K/W
Soldering temperature
Thermal resistance junction/ambient
Rev. 1.7, 04-Aug-14
Document Number: 81341
1
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEPT4400
www.vishay.com
Vishay Semiconductors
PV - Power Dissipation (mW)
120
100
80
60
RthJA = 300 K/W
40
20
0
0
21337
10
20 30 40
50 60 70 80
90 100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Collector emitter breakdown voltage
Collector dark current
Collector emitter capacitance
Collector light current
TEST CONDITION
SYMBOL
MIN.
IC = 0.1 mA
VCEO
6
VCE = 5 V, E = 0
MAX.
UNIT
ICEO
3
50
nA
16
V
VCE = 0 V, f = 1 MHz, E = 0
CCEO
Ev = 20 lx, CIE illuminant A,
VCE = 5 V
IPCE
Ev = 100 lx, CIE illuminant A,
VCE = 5 V
IPCE
200
μA

± 30
deg
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
TYP.
Ev = 20 lx, CIE illuminant A,
IPCE = 1.2 μA
15
pF
70
μA
p
570
nm
0.5
440 to 800
nm
VCEsat
0.1
V
TYPE DEDICATED CHARACTERISTICS
PARAMETER
Photo current
TEST CONDITION
BINNED GROUP
SYMBOL
MIN.
MAX.
UNIT
EV = 20 lx,
CIE illuminant A,
VCE = 5 V, Tamb = 25 °C
A
IPCE
15
28.4
μA
B
IPCE
23.5
44.6
μA
C
IPCE
36.9
70
μA
Note
• Each 5000 piece bag will contain a single group. The label on the bag will indicate which binned group is in the bag. A specific group cannot
be ordered. Production shipments containing multiple bags will likely include multiple groups. Please design accordingly.
Rev. 1.7, 04-Aug-14
Document Number: 81341
2
For technical questions, contact: dete[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEPT4400
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
VCE = 5 V
VCE = 5 V
10 -7
IPCE - Photo Current (µA)
ICEO - Collector Dark Current (A)
10 -6
10 -8
10 -9
10 -10
10 -11
1000
100
10 -12
10 -13
-40
19758
-20
0
20
40
60
80
Tamb - Ambient Temperature (°C)
10
10
100
20149
IPCE rel - Relative Photo Current
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
VCE = 5 V, white LED
-40
19759
-20
0
20 40 60 80
Tamb - Ambient Temperature (°C)
100
Fig. 3 - Relative Photo Current vs. Ambient Temperature
f = 1 MHz
20
15
10
5
0
0.1
1.0
10.0
VCE - Collector Emitter Voltage (V)
Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage
1.0
200 lx
350
300
250
200
100 lx
150
100
50 lx
50
20 lx
0
20210
2
1
3
4
5
VCE - Collector Emitter Voltage (V)
Fig. 4 - Photo Current vs. Collector Emitter Voltage
Rev. 1.7, 04-Aug-14
S(λ)rel - Relative Spectral Sensitivity
IPCE - Photo Current (µA)
25
19762
400
0
1000
Fig. 5 - Photo Current vs. Illuminance
CCE0 - Collector Emitter Capacitance (pF)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
100
E v - Illuminance (Ix)
20019
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
300 400 500 600 700 800 900 1000 1100
λ - Wavelength (nm)
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Document Number: 81341
3
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TEPT4400
www.vishay.com
0°
Vishay Semiconductors
10°
20°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
ϕ - Angular Displacement
Srel- Relative Sensitivity
30°
80°
20159
0.6
0.4
0.2
0
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
Ø 3.2 ± 0.15
PACKAGE DIMENSIONS in millimeters
E
C
(2.5)
3.4 ± 0.1
5
.4
< 0.6
R1
(p
34.4 ± 0.5
AREA NOT PLANE
+ 0.2
2.54 nom.
Drawing-No.: 6.544-5054.01-4
Issue: 5; 28.07.14
1.5 ± 0:5
1.05 ± 0.1
0.5 - 0.1
Rev. 1.7, 04-Aug-14
)
re
he
7 ± 0.3
4.4 ± 0.1
Ø 3 ± 0.1
0.4 ± 0.05
technical drawings
according to DIN
specifications
Document Number: 81341
4
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000