TEPT4400 www.vishay.com Vishay Semiconductors Ambient Light Sensor FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): Ø 3 • High photo sensitivity • Adapted to human eye responsivity • Angle of half sensitivity: = ± 30° • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 20815 DESCRIPTION APPLICATIONS TEPT4400 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1 package. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. • Ambient light sensor for control of display backlight dimming in LCD displays and keypad backlighting of mobile devices and in industrial on / off-lighting operation • Replacement of CdS photoresistors PRODUCT SUMMARY COMPONENT IPCE (μA) (deg) 0.5 (nm) 200 ± 30 440 to 800 TEPT4400 Note • Test condition see table “Basic Characteristics“ ORDERING INFORMATION ORDERING CODE TEPT4400 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 5000 pcs, 5000 pcs/bulk. Label with IPCE group on each bulk. Specifications of group A/B/C see table “Type Dedicated Characteristics” on page 2 T-1 Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER SYMBOL VALUE UNIT Collector emitter voltage TEST CONDITION VCEO 6 V Emitter collector voltage VECO 1.5 V IC 20 mA PV 100 mW °C Collector current Power dissipation Tamb 55 °C Junction temperature Tj 100 Operating temperature range Tamb -40 to +85 °C Storage temperature range Tstg -40 to +100 °C t3s Tsd 260 °C J-STD-051, soldered on PCB RthJA 300 K/W Soldering temperature Thermal resistance junction/ambient Rev. 1.7, 04-Aug-14 Document Number: 81341 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEPT4400 www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 120 100 80 60 RthJA = 300 K/W 40 20 0 0 21337 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter breakdown voltage Collector dark current Collector emitter capacitance Collector light current TEST CONDITION SYMBOL MIN. IC = 0.1 mA VCEO 6 VCE = 5 V, E = 0 MAX. UNIT ICEO 3 50 nA 16 V VCE = 0 V, f = 1 MHz, E = 0 CCEO Ev = 20 lx, CIE illuminant A, VCE = 5 V IPCE Ev = 100 lx, CIE illuminant A, VCE = 5 V IPCE 200 μA ± 30 deg Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage TYP. Ev = 20 lx, CIE illuminant A, IPCE = 1.2 μA 15 pF 70 μA p 570 nm 0.5 440 to 800 nm VCEsat 0.1 V TYPE DEDICATED CHARACTERISTICS PARAMETER Photo current TEST CONDITION BINNED GROUP SYMBOL MIN. MAX. UNIT EV = 20 lx, CIE illuminant A, VCE = 5 V, Tamb = 25 °C A IPCE 15 28.4 μA B IPCE 23.5 44.6 μA C IPCE 36.9 70 μA Note • Each 5000 piece bag will contain a single group. The label on the bag will indicate which binned group is in the bag. A specific group cannot be ordered. Production shipments containing multiple bags will likely include multiple groups. Please design accordingly. Rev. 1.7, 04-Aug-14 Document Number: 81341 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEPT4400 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 VCE = 5 V VCE = 5 V 10 -7 IPCE - Photo Current (µA) ICEO - Collector Dark Current (A) 10 -6 10 -8 10 -9 10 -10 10 -11 1000 100 10 -12 10 -13 -40 19758 -20 0 20 40 60 80 Tamb - Ambient Temperature (°C) 10 10 100 20149 IPCE rel - Relative Photo Current 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 VCE = 5 V, white LED -40 19759 -20 0 20 40 60 80 Tamb - Ambient Temperature (°C) 100 Fig. 3 - Relative Photo Current vs. Ambient Temperature f = 1 MHz 20 15 10 5 0 0.1 1.0 10.0 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage 1.0 200 lx 350 300 250 200 100 lx 150 100 50 lx 50 20 lx 0 20210 2 1 3 4 5 VCE - Collector Emitter Voltage (V) Fig. 4 - Photo Current vs. Collector Emitter Voltage Rev. 1.7, 04-Aug-14 S(λ)rel - Relative Spectral Sensitivity IPCE - Photo Current (µA) 25 19762 400 0 1000 Fig. 5 - Photo Current vs. Illuminance CCE0 - Collector Emitter Capacitance (pF) Fig. 2 - Collector Dark Current vs. Ambient Temperature 100 E v - Illuminance (Ix) 20019 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 300 400 500 600 700 800 900 1000 1100 λ - Wavelength (nm) Fig. 7 - Relative Spectral Sensitivity vs. Wavelength Document Number: 81341 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEPT4400 www.vishay.com 0° Vishay Semiconductors 10° 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Srel- Relative Sensitivity 30° 80° 20159 0.6 0.4 0.2 0 Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement Ø 3.2 ± 0.15 PACKAGE DIMENSIONS in millimeters E C (2.5) 3.4 ± 0.1 5 .4 < 0.6 R1 (p 34.4 ± 0.5 AREA NOT PLANE + 0.2 2.54 nom. Drawing-No.: 6.544-5054.01-4 Issue: 5; 28.07.14 1.5 ± 0:5 1.05 ± 0.1 0.5 - 0.1 Rev. 1.7, 04-Aug-14 ) re he 7 ± 0.3 4.4 ± 0.1 Ø 3 ± 0.1 0.4 ± 0.05 technical drawings according to DIN specifications Document Number: 81341 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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