TEPT5700 www.vishay.com Vishay Semiconductors Ambient Light Sensor FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • High photo sensitivity • Adapted to human eye responsivity • Angle of half sensitivity: ϕ = ± 50° • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 20118 APPLICATIONS DESCRIPTION • Ambient light sensor for control of display backlight dimming in LCD displays and keypad backlighting of mobile devices and in industrial on/off-lighting operation TEPT5700 ambient light sensor is a silicon NPN epitaxial planar phototransistor in a T-1¾ package. It is sensitive to visible light much like the human eye and has peak sensitivity at 570 nm. PRODUCT SUMMARY COMPONENT TEPT5700 IPCE (μA) ϕ (deg) λ0.5 (nm) 75 ± 50 440 to 800 Note • Test condition see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE TEPT5700 PACKAGING REMARKS PACKAGE FORM Bulk MOQ: 4000 pcs, 4000 pcs/bulk. Label with IPCE group on each bulk. Specifications of group A/B/C see table “Type Dedicated Characteristics” on page 2 T-1¾ Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Collector emitter voltage VCEO 6 V Emitter collector voltage VECO 1.5 V Collector current Power dissipation Tamb ≤ 55 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.7, 25-Jun-14 IC 20 mA PV 100 mW Tj 100 °C Tamb -40 to +85 °C Tstg -40 to +100 °C t ≤ 5 s, 2 mm distance to package Tsd 260 °C J-STD-051, soldered on PCB RthJA 230 K/W Document Number: 81321 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEPT5700 www.vishay.com Vishay Semiconductors PV - Power Dissipation (mW) 120 100 80 60 RthJA = 230 K/W 40 20 0 0 21333 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Collector emitter breakdown voltage Collector dark current Collector emitter capacitance Collector light current TEST CONDITION SYMBOL MIN. IC = 0.1 mA VCEO 6 VCE = 5 V, E = 0 ICEO MAX. UNIT 3 50 nA 24 μA V VCE = 0 V, f = 1 MHz, E = 0 CCEO Ev = 20 lx, CIE illuminant A, VCE = 5 V IPCE Ev = 100 lx, CIE illuminant A, VCE = 5 V IPCE 75 μA ϕ ± 50 deg Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage TYP. Ev = 20 lx, CIE illuminant A, IPCE = 1.2 μA 16 5.2 pF λp 570 nm λ0.5 440 to 800 nm VCEsat 0.1 V TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION BINNED GROUP SYMBOL MIN. EV = 20 lx, CIE illuminant A, VCE = 5 V, Tamb = 25 °C A IPCE 5.2 9.9 μA Photo current B IPCE 8.2 15.4 μA C IPCE 12.7 24 μA MAX. UNIT Note • Each 4000 piece bag will contain a single group. The label on the bag will indicate which binned group is in the bag. A specific group cannot be ordered. Production shipments containing multiple bags will likely include multiple groups. Please design accordingly. Rev. 1.7, 25-Jun-14 Document Number: 81321 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEPT5700 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 VCE = 5 V 10 -7 IPCE - Photo Current (µA) ICEO - Collector Dark Current (A) 10 -6 10 -8 10 -9 10 -10 10 -11 VCE = 5 V 100 10 10 -12 10 -13 -40 19758 -20 0 20 40 60 80 Tamb - Ambient Temperature (°C) 1 10 100 20148 Fig. 2 - Collector Dark Current vs. Ambient Temperature 1.4 1.2 1.0 0.8 0.6 VCE = 5 V, white LED -40 19759 -20 0 20 40 60 80 Tamb - Ambient Temperature (°C) 100 Fig. 3 - Relative Photo Current vs. Ambient Temperature 200 lx 120 100 80 100 lx 60 40 50 lx 20 0 25 f = 1 MHz 20 15 10 5 0 0.1 19762 1.0 10.0 VCE - Collector Emitter Voltage (V) Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage 1.0 140 IPCE - Photo Current (µA) CCE0 - Collector Emitter Capacitance (pF) 1.8 1.6 20 lx 0 20209 1 VCE 2 3 4 5 - Collector Emitter Voltage (V) Fig. 4 - Photo Current vs. Collector Emitter Voltage Rev. 1.7, 25-Jun-14 S(λ)rel - Relative Spectral Sensitivity IPCE rel - Relative Photo Current 2.0 0 1000 Fig. 5 - Photo Current vs. Illuminance 2.2 0.4 0.2 100 E v - Illuminance (Ix) 20019 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 300 400 500 600 700 800 900 1000 1100 λ - Wavelength (nm) Fig. 7 - Relative Spectral Sensitivity vs. Wavelength Document Number: 81321 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TEPT5700 www.vishay.com 0° Vishay Semiconductors 10° 20° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 ϕ - Angular Displacement Srel - Relative Sensitivity 30° 80° 0.6 0.4 0.2 0 20160 Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement PACKAGE DIMENSIONS in millimeters 20117 Rev. 1.7, 25-Jun-14 Document Number: 81321 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000