Application Non-planar chip technology Planar chip technology Active area Active area n n p p p and n zone within one planarity small active area (e. g. Melf ~ 0.36 mm2) ⇒ Advantages - High pulse capability - High power dissipation - high admissible zener current (Z-diodes) ⇒ Advantages - Low junction capacity - for Z-diodes with VZ < 6.8 V: Lower leakage current IR, more sharp characteristic Assembly: plastic package Assembly: glass package Type Typ n zone top, p zone bottom large active area (e. g. Melf ~ 1.69 mm2) Chip soldered to contacts, molded with duroplast (UL94V-0) = high reliability and good heat transfer Chip pressure contacted, within glass tube = simple assembly, but disadvantage in heat transfer Application high currents/power/voltages e. g. Application Small power/small signal diodes e. g. MiniMELF case ZMD1…100 (1 W Zener) GL1A…M (1 A, 50…1000 V) MiniMELF case ZMM1…75 (500 mW Zener) LL4148 (200 mA, 100 V) MELF case ZMY1…200 (1.3 W Zener) SMZ1..200 (2 W Zener) SZ3C1…200 (3 W Zener) SM513…2000 (1 A, 1.3…2 kV) MELF case ZMY3.9G…9.1G (1 W Zener) © Diotec Semiconductor AG www.diotec.com Version 2008-12-02