SiB411DK Datasheet

SiB411DK
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
- 20
RDS(on) (Ω)
ID (A)
0.066 at VGS = - 4.5 V
- 9a
0.094 at VGS = - 2.5 V
- 9a
0.130 at VGS = - 1.8 V
a
-9
• Halogen-free
• TrenchFET® Power MOSFET
• New Thermally Enhanced PowerPAK®
SC-75 Package
- Small Footprint Area
- Low On-Resistance
Qg (Typ.)
6 nC
RoHS
COMPLIANT
APPLICATIONS
• Load Switch, PA Switch and Battery Switch for Portable
Devices
PowerPAK SC-75-6L-Single
S
1
D
2
Marking Code
D
G
3
6
G
D
BBX
Part # code
5
S
D
1.60 mm
S
XXX
Lot Traceability
and Date code
1.60 mm
4
D
P-Channel MOSFET
Ordering Information: SiB411DK-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDS
VGS
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Drain Current (TJ = 150 °C)
TC = 25 °C
TA = 25 °C
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous Source-Drain Diode Current
Maximum Power Dissipation
ID
TJ, Tstg
Operating Junction and Storage Temperature Range
d, e
V
- 9a
- 2b, c
13
8.4
IS
PD
Unit
- 9a
- 8.9a
- 4.8b, c
- 3.8b, c
- 15
IDM
Pulsed Drain Current
Soldering Recommendations (Peak Temperature)
Limit
- 20
±8
2.4b, c
1.6b, c
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
t≤5s
Steady State
Symbol
RthJA
RthJC
Typical
41
7.5
Maximum
51
9.5
Unit
°C/W
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-75 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 105 °C/W.
Document Number: 74335
S-80515-Rev. C, 10-Mar-08
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1
SiB411DK
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
VDS
VGS = 0 V, ID = - 250 µA
- 20
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
ΔVDS/TJ
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVGS(th)/TJ
Gate-Source Threshold Voltage
ID = - 250 µA
VGS(th)
VDS = VGS, ID = - 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Drain-Source On-State Resistancea
Forward Transconductancea
gfs
mV/°C
2.2
- 0.4
-1
V
± 100
nA
VDS = - 20 V, VGS = 0 V
-1
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
VDS ≤ 5 V, VGS = - 4.5 V
RDS(on)
V
- 18
15
µA
A
VGS = - 4.5 V, ID = - 3.3 A
0.055
0.066
VGS = - 2.5 V, ID = - 2.8 A
0.077
0.094
VGS = - 1.8 V, ID = - 0.77 A
0.107
0.130
VDS = - 10 V, ID = - 3.3 A
9.5
Ω
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Gate Resistance
Rg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
470
VDS = - 10 V, VGS = 0 V, f = 1 MHz
pF
95
65
VDS = - 10 V, VGS = - 8 V, ID = - 4.5 A
10
15
6
9
VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A
0.9
f = 1 MHz
7.5
nC
1.4
td(on)
Ω
10
15
40
60
45
70
tf
75
115
td(on)
5
10
10
15
VDD = - 10 V, RL = 2.1 Ω
ID ≅ - 4.8 A, VGEN = - 4.5 V, Rg = 1 Ω
tr
td(off)
VDD = - 10 V, RL = 2.1 Ω
ID ≅ - 4.8 A, VGEN = - 8 V, Rg = 1 Ω
tr
td(off)
tf
25
40
10
15
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
TC = 25 °C
IS
Pulse Diode Forward Current
ISM
Body Diode Voltage
VSD
-9
15
IS = - 3.8 A, VGS = 0 V
- 0.85
- 1.2
A
V
Body Diode Reverse Recovery Time
trr
20
40
ns
Body Diode Reverse Recovery Charge
Qrr
10
20
nC
Reverse Recovery Fall Time
ta
Reverse Recovery Rise Time
tb
IF = - 3.8 A, di/dt = 100 A/µs, TJ = 25 °C
15
5
ns
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 74335
S-80515-Rev. C, 10-Mar-08
SiB411DK
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
15
2.0
2.5 V
VGS = 5 thru 3 V
1.6
ID - Drain Current (A)
I D - Drain Current (A)
12
9
2V
6
3
1.2
25 °C
0.8
0.4
1.5 V
TC = 125 °C
- 55 °C
0
0.0
0.5
1.0
1.5
0.0
0.0
2.0
0.3
VDS - Drain-to-Source Voltage (V)
0.9
1.2
1.5
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
800
0.20
700
VGS = 1.8 V
600
0.15
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.6
0.10
VGS = 2.5 V
Ciss
500
400
300
200
0.05
VGS = 4.5 V
Coss
100
Crss
0
0.00
0
3
6
9
12
0
15
8
12
16
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
8
20
1.6
ID = 4.8 A
ID = 3.3 A
1.4
6
4
VGS = 16 V
2
(Normalized)
VDS = 10 V
R DS(on) - On-Resistance
VGS - Gate-to-Source Voltage (V)
4
VGS = 4.5 V, 2.5 V, 1.8 V
1.2
1.0
0.8
0
0
2
4
6
8
Qg - Total Gate Charge (nC)
Gate Charge
Document Number: 74335
S-80515-Rev. C, 10-Mar-08
10
12
0.6
- 50
- 25
0
25
50
75
100
125
150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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SiB411DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.20
R DS(on) - Drain-to-Source On-Resistance (Ω)
I S - Source Cu rrent (A)
100
10
TJ = 150 °C
TJ = 25 °C
1
0.1
0
0.2
0.4
0.6
0.8
1
0.17
0.14
0.11
TJ = 125 °C
0.08
TJ = 25 °C
0.05
1.2
0
1
VSD - Source-to-Drain Voltage (V)
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Soure-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.9
20
ID = 250 µA
0.8
15
Power (W)
VGS(th) (V)
0.7
0.6
10
0.5
5
0.4
0.3
- 50
- 25
0
25
50
75
100
125
0
0.001
150
0.01
0.1
1
10
100
TJ - Temperature (°C)
Pulse (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
1000
100
Limited by RDS(on)*
I D - Drain Current (A)
10
100 µs
1 ms
1
10 ms
TA = 25 °C
Single Pulse
100 ms
1s
10 s
DC
0.1
BVDSS limited
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which R DS(on) is specified
Safe Operating Area, Junction-to-Case
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Document Number: 74335
S-80515-Rev. C, 10-Mar-08
SiB411DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
15
14
12
12
Power (W)
I D - Drain Current (A)
10
Package Limited
8
6
9
6
4
3
2
0
0
0
25
50
75
100
TC - Case Temperature (°C)
Current Derating*
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74335
S-80515-Rev. C, 10-Mar-08
www.vishay.com
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SiB411DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
Notes:
0.05
PDM
0.02
t1
t2
1. Duty Cycle, D =
Single Pulse
t1
t2
2. Per Unit Base = R thJA = 80 °C/W
3. T JM - TA = PDMZthJA(t)
4. Surface Mounted
0.01
10-4
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
1000
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
10-4
10-3
10-2
10-1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74335.
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Document Number: 74335
S-80515-Rev. C, 10-Mar-08
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Revision: 02-Oct-12
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Document Number: 91000