New Product SiA411DJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.041 at VGS = - 2.5 V - 12a 0.056 at VGS = - 1.8 V - 12 a 0.150 at VGS = - 1.5 V -2 • Halogen-free • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance Qg (Typ.) 15 nC RoHS COMPLIANT APPLICATIONS PowerPAK SC-70-6L-Single • Load Switch, PA Switch and Battery Switch for Portable Devices S 1 D Marking Code 2 D BEX 3 6 Part # code G D 5 2.05 mm Lot Traceability and Date code S D S G XXX 2.05 mm 4 D Ordering Information: SiA411DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e ID TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C IS PD TJ, Tstg Limit - 20 ±8 - 12a - 12a - 8.8b, c - 7b, c - 20 - 12a - 2.9b, c 19 12 3.5b, c 2.2b, c - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit RthJA t≤5s 28 36 Maximum Junction-to-Ambientb, f °C/W RthJC 5.3 6.5 Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 °C/W. Document Number: 74464 S-80435-Rev. C, 03-Mar-08 www.vishay.com 1 New Product SiA411DJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea RDS(on) Transconductancea gfs Forward V - 19.5 mV/°C 2.3 - 0.4 -1 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V - 20 µA A VGS = - 4.5 V, ID = - 5.9 A 0.025 0.030 VGS = - 2.5 V, ID = - 5.0 A 0.033 0.041 VGS = - 1.8 V, ID = - 1.8 A 0.045 0.056 VGS = - 1.5 V, ID = - 0.7 A 0.075 0.150 VDS = - 10 V, ID = - 5.9 A 21 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 1200 VDS = - 10 V, VGS = 0 V, f = 1 MHz VDS = - 10 V, VGS = - 8 V, ID = - 8.8 A VDS = - 10 V, VGS = - 4.5 V, ID = - 8.8 A td(off) 25 38 15 23 2.5 f = 1 MHz VDD = - 10 V, RL = 1.4 Ω ID ≅ - 7 A, VGEN = - 4.5 V, Rg = 1 Ω Ω 5 12 20 65 100 40 60 tf 100 150 td(on) 5 10 25 35 40 60 12 20 tr td(off) nC 4 td(on) tr pF 210 155 VDD = - 10 V, RL = 1.4 Ω ID ≅ - 7 A, VGEN = - 8 V, Rg = 1 Ω tf ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 12 20 IS = - 7 A, VGS = 0 V IF = - 7 A, di/dt = 100 A/µs, TJ = 25 °C A - 0.85 - 1.2 V 20 40 ns 10 20 nC 13 7 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74464 S-80435-Rev. C, 03-Mar-08 New Product SiA411DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 10 VGS = 2 thru 5 V 8 I D - Drain Current (A) I D - Drain Current (A) 16 12 1.5 V 8 4 6 TC = 125 °C 4 2 TC = 25 °C 1V TC = - 55 °C 0 0.0 0.5 1.0 1.5 0 0.0 2.0 0.3 0.6 0.9 1.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.12 1.5 2100 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1800 0.10 0.08 VGS = 1.8 V 0.06 VGS = 2.5 V 0.04 1500 Ciss 1200 900 600 Coss 300 VGS = 4.5 V Crss 0.02 0 0 4 8 12 16 20 0 4 8 16 20 Capacitance On-Resistance vs. Drain Current and Gate Voltage 8 1.6 ID = 8.8 A ID = 5.9 A VGS = 4.5 V, 2.5 V, 1.8 V VDS = 10 V 4 VDS = 16 V 2 (Normalized) 1.4 6 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 12 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 1.2 1.0 0.8 0 0 5 10 15 Qg - Total Gate Charge (nC) Gate Charge Document Number: 74464 S-80435-Rev. C, 03-Mar-08 20 25 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 New Product SiA411DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 100 RDS(on) - On-Resistance (Ω) I S - Source Current (A) ID = 5.9 A 10 TJ = 150 °C TJ = 25 °C 1 0.09 0.06 125 °C 25 °C 0.03 0.00 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 30 0.7 25 ID = 250 µA Power (W) VGS(th) (V) 15 0.4 10 0.3 5 0 25 50 5 20 0.5 - 25 4 On-Resistance vs. Gate-to-Source Voltage 0.8 0.2 - 50 3 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Soure-Drain Diode Forward Voltage 0.6 2 75 100 125 0 0.001 150 0.01 0.1 1 10 100 1000 Time (s) TJ - Temperature (°C) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on)* 100 µs I D - Drain Current (A) 10 1 ms 1 10 ms 100 ms 1s 10 s dc 0.1 TA = 25 °C Single Pulse 0.01 0.1 BVDSS Limited 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 74464 S-80435-Rev. C, 03-Mar-08 New Product SiA411DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 25 20 Power Dissipation (W) I D - Drain Current (A) 15 15 Package Limited 10 10 5 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74464 S-80435-Rev. C, 03-Mar-08 www.vishay.com 5 New Product SiA411DJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 0.05 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74464. www.vishay.com 6 Document Number: 74464 S-80435-Rev. C, 03-Mar-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000