AND8295/D A 36W Ballast Application with the NCP5106B Prepared by: Thierry Sutto http://onsemi.com This document describes how the NCP5106B driver can be implemented in a ballast application. The scope of this application note is to highlight the NCP5106B driver and not to explain or detailed how to build electronic ballast. The NCP5106B is a high voltage power MOSFET driver providing two outputs for direct drive of 2 N-channel power MOSFETs arranged in a half-bridge configuration with a cross conduction protection between the 2 channels. It uses the bootstrap technique to insure a proper drive of the High-side power switch. The driver works with 2 independent inputs to accommodate any topology (including half-bridge, asymmetrical half-bridge, active clamp and full-bridge). NCP5106B driver. The driver is supplied by the VCC rail, and the high side driver is supplied by the bootstrap diode: when the low side power MOSFET (Q2) is switched ON, the BRIDGE pin is pulled down to the ground, thus the capacitor connected between BRIDGE pin and VBOOT pin is refuelled via the diode D3 and the resistor R5 connected to VCC. When Q2 is switched OFF the bootstrap capacitor C6 supplies the high side driver with a voltage equal to VCC level minus the D3 forward voltage diode. Given the NCP5106B architecture, it is up to the designer to generate the right input signal polarity with the desired dead time. Nevertheless the NCP5106B provides a cross conduction protection with an internal fixed dead time. Thus in case of overlap on the inputs signal, the both outputs driver will be kept in low state, or a minimum of 100 ns dead time will be applied between the both drivers. The 555 timer generates only one signal for the driver, the second one, in opposite phase is built by inserting a NPN transistor (Q4) for inverting the signal. Afterwards the dead time is built with R2, D2 and C13 (typically 400 ns, see Figure 1). Demo Board Specification • Input range : 85 - 145 Vac or 184 - 265 Vac • Ballast Output power : 36 W (type PL-L 36W) ♦Pre-Heating current : 295 mA time : 1 second ♦Nominal current : 414 mA ♦Pre-heating BEFORE PLUGGING IN THE DEMO BOARD, MAKE SURE THE JUMPER IS ON THE CORRECT POSITION: IF J2 IS USED, THEN Vin MUST BE LOWER THAN 145 Vac. Detailed Operation The lamp ballast is powered via a half bridge configuration. The 2 power MOSFETs are driven with the Dead time 40 0 ns DRV_HI (5 V/div) DRV_LO (5 V/div) Time (400 ns/div) Figure 1. Dead Time Between the High and Low Side Driver © Semiconductor Components Industries, LLC, 2007 June, 2007 - Rev. 0 1 Publication Order Number: AND8295/D AND8295/D IN_HI (10 V/div) DRV_HI (10 V/div) IN_LO (10 V/div) DRV_LO (10 V/div) Time (4 ms/div) Figure 2. Input Output Timing Diagram Tube Voltage (100 V /div) Tube current (0.5 V/div) Tube Power (50 W/div) Tube a verage power = 32 Figure 3. Tube Signals http://onsemi.com 2 W http://onsemi.com C16 NC R10 33k Figure 4. Demo Board Schematic 5 2 4 R15 22k 5V1 D4 CVolt TRIG R 4 Q GND THR R16 68k 27k R12 6 7 3 GND GND VCC R13 15k VCC GND C12 18pF GND Q4 BC547B C13 18pF R3 82k 2W GND 1N4148 D2 R2 110k C1 47 uF 400 V SerieM Panasonic C1 47 uF 400 V SerieM Panasonic C3 R1 220uF 22k GND D1 15V 1.3W VCC DF06 1 PT1 J2 US-jumper 3 DIS C17 100 uF U1 TLC555C F1 T500 mA GND C11 10nF GND Q3 BC547B R11 47k GND C10 220pF C9 220pF VCC CON2 1 2 8 VCC GND 3 1 2 1 J1 2 4 3 2 1 1N4936 D5 U2 NCP5106B GND IN_LO IN_HI VCC D3 5 6 7 8 R5 10R GND D6 1N4936 C14 220pF/400V DRV_LO BRIDGE DRV_HI VBOOT 1N4936 C5 100nF GND C4 4.7uF GND GND R4 82k 2W GND R14 390k R9 10k R7 10R C6 R6 R8 100nF 10R 10k GND Q2 IRF840LC 1.4mH L1 Q1 IRF840LC 6.8nF 1kV C15 BALLAST B1 GND C8 220nF 400V C7 220nF 400V AND8295/D AND8295/D Figure 5. PCB Printout: Top and Bottom View http://onsemi.com 4 AND8295/D BILL OF MATERIAL Part Type Designator Manufacturer Description Connector B1,J1 - Connector 47mF/400V C1,C2 Panasonic M Series 220pF C10 Generic Capacitor 10nF C11 Generic Capacitor 18pF C12,C13 Generic Capacitor 220pF/400V C14 Generic Capacitor 6.8nF/1kV C15 Generic Capacitor NC C16 - Capacitor 100mF C17 Generic Capacitor 220mF C3 Generic Capacitor 4.7uF/50V C4 Generic Capacitor 100nF C5 Generic Capacitor 100nF C6 Generic Capacitor 220nF/400V C7,C8 Generic Capacitor 220pF C9 Generic Capacitor BZX85C15V D1 Generic 15V Zener Diode 1N4148 D2 Generic Signal Diode 1N4936 D3,D5,D6 ON Semiconductor Fast Recovery rectifier BZX85C5V1 D4 Generic 5V1 Zener Diode T500mA F1 Generic Fuse US-jumper J2 - Jumper for US Main Supply Only 1.4mH L1 VOGT VOGT 53-044 DF06M PT1 - 600V Diode Bridge IRF840LC Q1,Q2 IRF Low Charge N-Channel MOSFET BC547B Q3,Q4 Generic NPN Transistor 22k R1 Generic Resistor 33k R10 Generic Resistor 47k R11 Generic Resistor 27k R12 Generic Resistor 15k R13 Generic Resistor 390k R14 Generic Resistor 22k R15 Generic Resistor 68k R16 Generic Resistor 110k R2 Generic Resistor 82k/2W R3,R4 Generic Resistor 2W Power Type 10R R5,R6,R7 Generic Resistor 10k R8,R9 Generic Resistor TLC555C U1 Texas Instrument CMOS 555 timer NCP5106B U2 ON Semiconductor NCP5106B http://onsemi.com 5 AND8295/D ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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