DG444, DG445 www.vishay.com Vishay Siliconix Quad SPST CMOS Analog Switches APPLICATIONS FEATURES • Audio switching • Low on-resistance: 50 • Battery powered systems • Low leakage: 80 pA • Data acquisition • Low power consumption: 22 nW • Sample-and-hold circuits • Fast switching action - tON: 120 ns • Telecommunication systems • Low charge injection • Automatic test equipment • DG211, DG212 upgrades • Single supply circuits • TTL/CMOS logic compatible • Hard disk drives BENEFITS DESCRIPTION • Low signal errors and distortion The DG444, DG445 monolithic quad analog switches are designed to provide high speed, low error switching of analog signals. The DG444 has a normally closed function. The DG445 has a normally open function. Combining low power (22 nW, typ.) with high speed (tON: 120 ns, typ.), the DG444, DG445 are ideally suited for upgrading DG211, DG212 sockets. Charge injection has been minimized on the drain for use in sample-and-hold circuits. • Reduced power supply requirements To achieve high-voltage ratings and superior switching performance, the DG444, DG445 are built on Vishay Siliconix’s high-voltage silicon-gate process. An epitaxial layer prevents latchup. • Faster throughput • Improved reliability • Reduced pedestal errors • Simple interfacing • Wide supply ranges - Single supply: +5 V to 36 V - Dual supplies: ± 5 V to ± 20 V Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION TRUTH TABLE Dual-In-Line and SOIC IN1 16 1 IN2 D1 2 15 D2 S1 3 14 S2 V- 4 13 V+ DG444 GND 5 12 VL S4 6 11 S3 D4 7 10 D3 IN4 8 9 IN3 LOGIC DG444 DG445 0 On Off 1 Off On Note • Logic "0" 0.8 V Logic "1" 2.4 V ORDERING INFORMATION TEMP. RANGE PACKAGE 16-pin plastic DIP -40 °C to 85 °C 16-pin narrow SOIC PART NUMBER DG444DJ DG445DJ DG444DY DG445DY Top View S13-2503-Rev. H, 16-Dec-13 Document Number: 70054 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 www.vishay.com Vishay Siliconix ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER LIMIT V+ to V- UNIT 44 GND to V- 25 VL V (GND - 0.3) to (V+) +0.3 (V-) -2 to (V+) +2 or 30 mA, whichever occurs first Digital Inputs a, VS, VD Continuous Current (Any Terminal) 30 Current, S or D (Pulsed at 1 ms, 10 % Duty Cycle ) 100 Storage Temperature Power Dissipation (Package) b mA -65 to 125 16-Pin Plastic DIP c °C 450 16-Pin Narrow Body SOIC d mW 640 Notes a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 6 mW/°C above 75 °C. d. Derate 8 mW/°C above 75 °C. SPECIFICATIONS for Dual Supplies PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 V e TEMP. D SUFFIX -40 °C TO 85 °C a MIN. b UNIT TYP. c MAX. b Analog Switch Analog Signal Range d Drain-Source On-Resistanc e VANALOG RDS(on) IS(off) Switch Off Leakage Current ID(off) IS = -10 mA, VD = ± 8.5 V V+ = 13.5 V, V- = -13.5 V V+ = 16.5, V- = -16.5 V VD = ± 15.5 V, VS = ± 15.5 V Full -15 - 15 V Room - 50 85 Full - - 100 Room -0.5 ± 0.01 0.5 Full -5 ± 0.01 5 Room -0.5 ± 0.01 0.5 Full -5 ± 0.01 5 Room -0.5 ± 0.08 0.5 Full -10 ± 0.08 10 ID(on) V+ = 16.5 V, V- = -16.5 V VS = VD = ± 15.5 V Input Current VIN Low IIL VIN under test = 0.8 V All Other = 2.4 V Full -500 -0.01 500 Input Current VIN High IIH VIN under test = 2.4 V All Other = 0.8 V Full -500 0.01 500 Room - 120 250 DG444 Room - 110 140 DG445 Room - 160 210 Room - -1 - Channel On Leakage Current nA Digital Control nA Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection e tON tOFF Q Off Isolation e OIRR Crosstalk (Channel-to-Channel) d XTALK Source Off Capacitance CS(off) Drain Off Capacitance CD(off) Channel On Capacitance CD(on) S13-2503-Rev. H, 16-Dec-13 RL = 1 k, CL = 35 pF VS = ± 10 V, See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 RL = 50 , CL = 5 pF, f =1 MHz f = 1 MHz VANALOG = 0 V Room - 60 - Room - 100 - Room - 4 - Room - 4 - Room - 16 - ns pC dB pF Document Number: 70054 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 www.vishay.com Vishay Siliconix SPECIFICATIONS for Dual Supplies PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 V e TEMP. D SUFFIX -40 °C TO 85 °C a UNIT MIN. b TYP. c MAX. b Room - 0.001 1 Full - - 5 Room -1 -0.0001 - Full -5 - - Room - 0.001 1 Full - 0.001 5 Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ IIL V+ = 16.5 V, V- = -16.5 V VIN = 0 V or 5 V IGND Room -1 -0.001 - Full -5 -0.001 - μA SPECIFICATIONS for Unipolar Supplies PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 V e TEMP. a LIMITS -40 °C °C TO 85 °C MIN. b TYP. c UNIT MAX. b Analog Switch Analog Signal Range d Drain-Source On-Resistance d VANALOG RDS(on) IS = -10 mA, VD = 3 V, 8 V V+ = 10.8 V, VL = 5.25 V Full 0 - 12 V Room - 100 160 Full - - 200 Dynamic Characteristics Turn-On Time tON - 300 450 tOFF RL = 1 k, CL = 35 pF, VS = 8 V See Figure 2 Room Turn-Off Time Room - 60 200 Q CL = 1 nF, Vgen = 6 V, Rgen = 0 Room - 2 - I+ V+ = 13.2 V, VIN = 0 V or 5 V Room - 0.001 1 Full - - 5 Room -1 -0.0001 - Full -5 - - Room - 0.001 1 Charge Injection ns pC Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current IIL IGND VIN = 0 V or 5 V VL = 5.25 V, VIN = 0 V or 5 V VIN = 0 V or 5 V Full - - 5 Room -1 -0.001 - Full -5 - - μA Notes a. Room = 25 °C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-2503-Rev. H, 16-Dec-13 Document Number: 70054 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) - 140 V+ = 15 V V- = - 15 V 70 - 120 Crosstalk 60 - 100 50 85 °C 40 (dB) R DS(on) - Drain-Source On-Resistance (Ω) 80 25 °C - 80 - 60 30 Off Isolation 20 - 40 - 40 °C 0 °C V+ = 15 V V- = - 15 V Ref. 10 dBm - 20 10 0 0 - 15 - 10 -5 0 5 10 15 100 1K 10K VD - Drain Voltage (V) 100K 1M 10M f - Frequency (Hz) RDS(on) vs. VD and Temperature Crosstalk and Off Isolation vs. Frequency 50 40 CL = 1 nF 4 30 3 V+ = 15 V V- = - 15 V 10 V TH (V) Q (pC) 20 VL = 7 V 2 0 V+ = 12 V V- = 0 V - 10 1 - 20 VL = 5 V 0 - 30 -5 - 10 5 0 0 10 4 8 12 16 20 VSUPPLY (V) VS - Source Voltage (V) Charge Injection vs. Source Voltage Switching Threshold vs. Supply Voltage 20 10 IS(off) , ID(off) IS(off), ID(off) 0 0 I S , ID (pA) I S, I D (pA) - 20 ID(on) - 40 - 10 IS(on) + ID(on) - 20 - 60 V+ = 15 V V- = - 15 V For I(off), VD = - VS - 80 - 100 - 15 V+ = 12 V V- = 0 V For ID, V S = 0 V For IS, V D = 0 V - 30 - 40 - 10 -5 0 5 10 VD or V S - Drain or Source Voltage (V) Source/Drain Leakage Currents S13-2503-Rev. H, 16-Dec-13 15 0 2 4 6 8 10 12 VD or V S - Drain or Source Voltage (V) Source/Drain Leakage Currents (Single 12-V Supply) Document Number: 70054 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 160 500 V- = 0 V VL = 5 V 140 400 DG444 tON tOFF DG445 tON 300 100 t (ns) t (ns) 120 80 tON 60 tON 200 tOFF 100 DG444 40 tOFF tOFF DG445 20 0 ± 10 ± 12 ± 14 ± 16 ± 18 ± 20 ± 22 8 10 12 V - SUPPLY (V) Switching Time vs. Power Supply Voltage 16 18 20 22 Switching Times vs. Power Supply Voltage 100 mA 25 V+ = 15 V V- = - 15 V 10 mA 20 1 mA CS(on) + CD(on) I+, IGND 100 nA 15 C S, D (pF) I L , I-, I+, I GND 14 V+ - Positive Supply (V) 10 nA -(I-) 1 nA 10 100 pA 5 CS(off), CD(off) IL 10 pA 1 pA 0 - 55 - 25 0 25 75 50 100 - 15 125 - 10 -5 0 5 10 15 VANALOG - Analog Voltage (V) Temperature (°C) Supply Current vs. Temperature Source/Drain Capacitance vs. Analog Voltage 160 V+ = 15 V V- = - 15 V 140 tON t (ns) 120 100 tON 80 tOFF 60 DG444 40 DG445 20 2 3 4 5 Input Voltage (V) Switching Time vs. Input Voltage S13-2503-Rev. H, 16-Dec-13 Document Number: 70054 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 www.vishay.com Vishay Siliconix SCHEMATIC DIAGRAM TYPICAL CHANNEL V+ S VL VLevel Shift/ Drive VIN V+ GND D V- Fig. 1 TEST CIRCUITS +5V + 15 V Logic Input VL ± 10 V 3V 50 % V+ 0V D S IN VO RL 1 kΩ 3V tOFF Switch Input CL 35 pF VS VO V- GND tr < 20 ns tf < 20 ns 50 % Switch Output - 15 V Note: CL (includes fixture and stray capacitance) 80 % 80 % 0V tON Logic input waveform is inverted for DG445. Fig. 2 - Switching Time +5V Rg VL + 15 V VO V+ D S IN Vg ΔV O CL 1 nF 3V GND VO INX OFF ON OFF (DG444) V- INX - 15 V OFF ON Q = ΔV O x CL OFF (DG445) Fig. 3 - Charge Injection S13-2503-Rev. H, 16-Dec-13 Document Number: 70054 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 www.vishay.com Vishay Siliconix TEST CIRCUITS C = 1 mF tantalum in parallel with 0.01 mF ceramic +5V + 15 V C VL S1 VS +5V + 15 V VL V+ C V+ D1 Rg = 50 Ω 50 Ω IN1 S VS VO D 0 V, 2.4 V S2 Rg = 50 Ω VO D2 NC 0 V, 2.4 V RL IN2 RL IN 0 V, 2.4 V GND GND V- V- C C - 15 V - 15 V XTA LK Isolation = 20 log C = RF bypass VS Off Isolation = 20 log VS VO VO Fig. 5 - Off Isolation Fig. 4 - Crosstalk +5V + 15 V VL V+ C S Meter IN HP4192A Impedance Analyzer or Equivalent 0 V, 2.4 V D GND V- f = 1 MHz C - 15 V Fig. 6 - Source/Drain Capacitances APPLICATIONS + 15 V +5V + 15 V VL V+ 1/ 4 + 15 V DG444 VOUT +5V 0V 10 kΩ 0V VIN GND V- Fig. 7 - Level Shifter S13-2503-Rev. H, 16-Dec-13 Document Number: 70054 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG444, DG445 www.vishay.com Vishay Siliconix APPLICATIONS VIN + - VOUT +5V + 15 V VL Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. V+ GAIN1 AV = 1 R1 90 kΩ GAIN2 AV = 10 R2 5 kΩ With SW4 Closed: VOUT = R1 + R2 + R3 + R4 VIN GAIN3 AV = 20 R3 4 kΩ GAIN4 AV = 100 R4 1 kΩ = 100 R4 DG444 or DG445 V- GND - 15 V Fig. 8 - Precision-Weighted Resistor Programmable-Gain Amplifier +5V + 15 V V1 Logic Input Low = Sample High = Hold DG444 + 15 V - 15 V + 15 V VIN + J202 C1 50 pF 5M 5.1 MΩ R1 200 kΩ 2N4400 VOUT V2 30 pF GND C2 1000 pF J500 J507 - 15 V Fig. 9 - Precision Sample-and-Hold Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70054. S13-2503-Rev. H, 16-Dec-13 Document Number: 70054 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOIC (NARROW): 16ĆLEAD JEDEC Part Number: MS-012 MILLIMETERS 16 15 14 13 12 11 10 Dim A A1 B C D E e H L Ĭ 9 E 1 2 3 4 5 6 7 8 INCHES Min Max Min Max 1.35 1.75 0.053 0.069 0.10 0.20 0.004 0.008 0.38 0.51 0.015 0.020 0.18 0.23 0.007 0.009 9.80 10.00 0.385 0.393 3.80 4.00 0.149 0.157 1.27 BSC 0.050 BSC 5.80 6.20 0.228 0.244 0.50 0.93 0.020 0.037 0_ 8_ 0_ 8_ ECN: S-03946—Rev. F, 09-Jul-01 DWG: 5300 H D C All Leads e Document Number: 71194 02-Jul-01 B A1 L Ĭ 0.101 mm 0.004 IN www.vishay.com 1 Package Information Vishay Siliconix PDIP: 16ĆLEAD 16 15 14 13 12 11 10 9 E E1 1 2 3 4 5 6 7 8 D S Q1 A A1 L 15° MAX C B1 e1 Dim A A1 B B1 C D E E1 e1 eA L Q1 S B eA MILLIMETERS Min Max INCHES Min Max 3.81 5.08 0.150 0.200 0.38 1.27 0.015 0.050 0.38 0.51 0.015 0.020 0.89 1.65 0.035 0.065 0.20 0.30 0.008 0.012 18.93 21.33 0.745 0.840 7.62 8.26 0.300 0.325 5.59 7.11 0.220 0.280 2.29 2.79 0.090 0.110 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 1.27 2.03 0.050 0.080 0.38 1.52 .015 0.060 ECN: S-03946—Rev. D, 09-Jul-01 DWG: 5482 Document Number: 71261 06-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-16 RECOMMENDED MINIMUM PADS FOR SO-16 0.372 (9.449) 0.152 0.022 0.050 0.028 (0.559) (1.270) (0.711) (3.861) 0.246 (6.248) 0.047 (1.194) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 24 Document Number: 72608 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000