DG2303 Datasheet

DG2303
Vishay Siliconix
High-Speed, Low rON, 1.8-V/2.5-V/3.3-V/5-V, SPST Analog Switch
(1-Bit Bus Switch)
DESCRIPTION
FEATURES
The DG2303 is a high-speed, 1-bit, low power, TTLcompatible bus switch. Using sub-micron CMOS technology,
DG2303 achieves low on-resistance and negligible
propagation delay.
• SC-70 5-Lead Package
• 5 Ω Switch Connection Between Two Ports
• Minimal Propagation Delay
Through The Switch
• Low ICC
• Zero Bounce In Flow-Through Mode
• Control Inputs Compatible with TTL Level
The DG2303 consist of a bi-directional input/output pins A
and B. When the output enable (OE) is low, the input/output
pins are connected. When the OE is high, the switch is open
and a high-impedance state exists between input/output pins
A and B.
Pb-free
Available
RoHS*
COMPLIANT
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TRUTH TABLE
SC-70
A
1
B
2
GND
3
5
V+
4
OE
OE
B
Function
L
HiZ State
Disconnect
H
A
Connect
Top View
Device Marking: E6
ORDERING INFORMATION
Temp Range
Package
- 40 to 85 °C
SC70-5
Part Number
DG2303DL-T1
DG2303DL-T1-E3
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72073
S-70852-Rev. B, 30-Apr-07
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DG2303
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Reference V+ to GND
Limit
- 0.3 to + 6 V
OE, A, Ba
Continuous Current (Any Terminal)
± 50
mA
± 200
Storage Temperature (D Suffix)
Power Dissipation (Packages)
V
- 0.3 to (V+ + 0.3 V)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
b
Unit
5-Pin SC70
c
- 65 to 150
°C
250
mW
Notes:
a. Signals on A, or B or OE exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 3.1 mW/°C above 70 °C.
SPECIFICATIONS (V+ = 5.0 V)
Parameter
Symbol
Limits
- 40 to 85 °C
Test Conditions
Otherwise Unless Specified
V+ = 1.65 V to 5.5 V, VIN = VIH or VILe
Tempa
V+ = 1.8 V, VA = 0 V, IB = 4 mA
Full
Minb
Typc
Maxb
Unit
DC Characteristics
On-Resistance
rON Flatnessd
rON
rON
Flatness
28.0
V+ = 1.8 V, VA = 1.8 V, IB = 4 mA
Full
60.0
V+ = 2.3 V, VA = 0 V, IB = 8 mA
Full
12.0
V+ = 2.3 V, VA = 2.3 V, IB = 8 mA
Full
30.0
V+ = 3.0 V, VA = 0 V, IB = 24 mA
Full
9.0
V+ = 3.0 V, VA = 3.0 V, IB = 24 mA
Full
20.0
V+ = 4.5 V, VA = 0 V, IB = 30 mA
Full
7.0
V+ = 4.5 V, VA = 2.4 V, IB = 15 mA
Full
12.0
V+ = 4.5 V, VA = 4.5 V, IB = 30 mA
Full
15.0
V+ = 1.8 V, VA = 0 V to V+, IB = 4 mA
Full
125
V+ = 2.5 V, VA = 0 V to V+, IB = 8 mA
Full
28
V+ = 3.3 V, VA = 0 V to V+, IB = 24 mA
Full
12
V+ = 5.0 V, VA = 0 V to V+, IB = 30 mA
Full
6
Switch Off Leakage Current
I(off)
V+ = 5.5 V, VA = 1 V/4.5 V, VB = 4.5 V/1 V
Full
- 10
10
Switch-On Leakage Current
I(on)
V+ = 5.5 V, VA = VB = 1 V/4.5 V
Full
- 10
10
V+ = 1.65 V to 1.95 V
Full
1.35
V+ = 2.3 V to 2.7 V
Full
1.6
V+ = 3.0 V to 3.6 V
Full
2.0
V+ = 4.5 V to 5.5 V
Full
2.4
V+ = 1.65 V to 1.95 V
Full
0.4
V+ = 2.3 V to 2.7 V
Full
0.4
V+ = 3.0 V to 3.6 V
Full
0.6
V+ = 4.5 V to 5.5 V
Full
VOE = 0 or V+
Full
Input High Voltage
Input Low Voltage
Input Current
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VIH
VIL
IIL or IIH
Ω
µA
V
0.8
-1
1
µA
Document Number: 72073
S-70852-Rev. B, 30-Apr-07
DG2303
Vishay Siliconix
SPECIFICATIONS
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 1.65 V to 5.5 V, VIN = VIH or VILe
Limits
- 40 to 85 °C
Tempa
Minb
Typc
Maxb
Unit
Dynamic Characteristics
Prop Delay Bus-to-Busf
tPHL, tPLH
tPZL
Output Enable Timed
tPZH
tPLZ
Output Disable Timed
Charge
Off
Isolationd
Insertion Loss
d
Input Capacitanced
Full
5
VLD = Open, V = 2.3 V to 2.7 V, (Figure 1 and 2)
Full
2
VLD = Open, V = 3.0 V to 3.6 V, (Figure 1 and 2)
Full
1
VLD = Open, V = 4.5 V to 5.5 V, (Figure 1 and 2)
Full
1
VLD = 2 x V+, V+ = 1.65 V to 1.95 V (Figure 1 and 2)
Full
4.2
VLD = 2 x V+, V+ = 2.3 V to 2.7 V (Figure 1 and 2)
Full
3.3
VLD = 2 x V+, V+ = 3.0 V to 3.6 V (Figure 1 and 2)
Full
2.6
VLD = 2 x V+, V+ = 4.5 V to 5.5 V (Figure 1 and 2)
Full
1.8
VLD = 0 V, V+ = 1.65 V to 1.95 V (Figure 1 and 2)
Full
4.4
VLD = 0 V, V+ = 2.3 V to 2.7 V (Figure 1 and 2)
Full
3.3
VLD = 0 V, V+ = 3.0 V to 3.6 V (Figure 1 and 2)
Full
2.7
VLD = 0 V, V+ = 4.5 V to 5.5 V (Figure 1 and 2)
Full
2.0
VLD = 2 x V+, V+ = 1.65 V to 1.95 V (Figure 1 and 2)
Full
14.3
VLD = 2 x V+, V+ = 2.3 V to 2.7 V (Figure 1 and 2)
Full
10.5
VLD = 2 x V+, V+ = 3.0 V to 3.6 V (Figure 1 and 2)
Full
8.6
VLD = 2 x V+, V+ = 4.5 V to 5.5 V (Figure 1 and 2)
Full
7.4
VLD = 0 V, V+ = 1.65 V to 1.95 V (Figure 1 and 2)
Full
10.7
ns
VLD = 0 V, V+ = 2.3 V to 2.7 V (Figure 1 and 2)
Full
9.6
VLD = 0 V, V+ = 3.0 V to 3.6 V (Figure 1 and 2)
Full
8.7
VLD = 0 V, V+ = 4.5 V to 5.5 V (Figure 1 and 2)
Full
7.5
QINJ
CL = 1 nF, VGEN = 0 V, RGEN = 0 Ω, (Figure 3)
Room
0.5
pC
OIRR
RL = 50 Ω, CL = 5 pF, f = 10 MHz
Room
- 50
dB
Loss
RL = 50 Ω
Room
> 200
MHz
Room
4
tPHZ
Injectiond
VLD = Open, V = 1.65 V to 1.95 V, (Figure 1 and 2)
Cin
Channel-Off Capacitanced
C(off)
Channel-On Capacitanced
CON
VOE = 0 or V+, f = 1 MHz
Room
9
Room
20
pF
Power Supply
Power Supply Range
Power Supply Current
V+
I+
1.65
VOE = 0 or V+
5.5
V
1.0
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, nor subjected to production test.
e. VIN = input voltage to perform proper function.
f. Guaranteed by design and not production tested. The bus switch propagation delay is a function of the RC time constant contributed by the
on-resistance and the specified load capacitance with an ideal voltage source (zero output impedance) driving the switch.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 72073
S-70852-Rev. B, 30-Apr-07
www.vishay.com
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DG2303
Vishay Siliconix
AC LOADING AND WAVEFORMS
VLD
Ra =
500 Ω
A
SWITCH
INPUT
B
SWITCH
OUTPUT
Rb =
500 Ω
CL
OE
LOGIC
INPUT
CL =
50 pF
Input driven by 50 Ω source terminated in 50 Ω
CL includes load and stray capacitance
Input PRR = 1.0 MHz, tW = 50 ns
Figure 1. AC Test Circuit
tf = 2.5 ns
tr = 2.5 ns
V+
90 %
Switch
Input
tr = 2.5 ns
tf = 2.5 ns
90 %
1.5 V
90 %
Logic
Input
1.5 V
1.5 V
1.5 V
10 %
10 %
10 %
tw
tPLH
1.5 V
GND
tPLZ
VLd
2
tPHL
VOH
Output
10 %
tPZL
GND
V+
90 %
1.5 V
Output
VOL + 0.3 V
VOL
1.5 V
tPZH
tPHZ
VOH
VOL
VOH -0.3 V
Output
1.5 V
0V
Figure 2. AC Waveforms
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Document Number: 72073
S-70852-Rev. B, 30-Apr-07
DG2303
Vishay Siliconix
TEST CIRCUITS
V+
Rgen
ΔVOUT
V+
B
VOUT
A
VOUT
+
Vgen
OE
IN
CL = 0.1 nF
On
Off
On
GND
Q = ΔVOUT x CL
VIN = 0 - V+
IN depends on switch configuration: input polarity
determined by sense of switch.
Figure 3. Charge Injection
V+
10 nF
V+
A
OE
VIN
B
RL
VB
Off Isolation = 20 log V
A
GND
Analyzer
Figure 4. Off-Isolation
V+
10 nF
V+
B
Meter
OE
VIN
A
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
Figure 5. Channel Off/On Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72073.
Document Number: 72073
S-70852-Rev. B, 30-Apr-07
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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or in any other disclosure relating to any product.
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therein, which apply to these products.
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Document Number: 91000
Revision: 18-Jul-08
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