Data Sheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D793
BZB984 series
Voltage regulator double diodes
Product data sheet
Supersedes data of 2001 Nov 28
2002 Jun 21
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB984 series
FEATURES
PINNING
• Total power dissipation: max. 425 mW
PIN
DESCRIPTION
• Approx. 5% VZ tolerance
1
cathode 1
• Ultra small flat plastic SMD package
2
cathode 2
• Working voltage range nom. 2.4 to 15 V (E24 range).
3
common anode
APPLICATIONS
• General regulation functions
3
handbook, halfpage
3
• ESD and surge protection.
1
DESCRIPTION
1
Low-power voltage regulator diodes in a SOT663 ultra
small plastic SMD package.
2
Top view
Fig.1
2
MHC314
Simplified outline (SOT663) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BZB984-C2V4
91
BZB984-C3V9
96
BZB984-C6V2
9B
BZB984-C10
9G
BZB984-C2V7
92
BZB984-C4V3
97
BZB984-C6V8
9C
BZB984-C11
9H
BZB984-C3V0
93
BZB984-C4V7
98
BZB984-C7V5
9D
BZB984-C12
9J
BZB984-C3V3
94
BZB984-C5V1
99
BZB984-C8V2
9E
BZB984-C13
9K
BZB984-C3V6
95
BZB984-C5V6
9A
BZB984-C9V1
9F
BZB984-C15
9L
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
−
MAX.
200
UNIT
IF
continuous forward current
mA
IZSM
non-repetitive peak reverse
current
tp = 100 μs; square wave; Tamb = 25 °C;
prior to surge
see Table 1
Ptot
total power dissipation
Tamb = 25 °C; 2 diodes loaded; note 1
−
425
mW
Tamb = 25 °C; 1 diode loaded; note 1
−
265
mW
tp = 100 μs; square wave; Tamb = 25 °C;
prior to surge
−
40
W
PZSM
non-repetitive peak reverse
dissipation
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Note
1. Device mounted on an FR4 printed-circuit board.
2002 Jun 21
2
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB984 series
ELECTRICAL CHARACTERISTICS
Total BZB984-C series
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
2002 Jun 21
CONDITIONS
MAX.
UNIT
IF = 10 mA; see Fig.2
0.9
V
BZB984-C2V4
VR = 1 V
50
μA
BZB984-C2V7
VR = 1 V
20
μA
BZB984-C3V0
VR = 1 V
10
μA
BZB984-C3V3
VR = 1 V
5
μA
BZB984-C3V6
VR = 1 V
5
μA
BZB984-C3V9
VR = 1 V
3
μA
BZB984-C4V3
VR = 1 V
3
μA
BZB984-C4V7
VR = 2 V
3
μA
BZB984-C5V1
VR = 2 V
2
μA
BZB984-C5V6
VR = 2 V
1
μA
BZB984-C6V2
VR = 4 V
3
μA
BZB984-C6V8
VR = 4 V
2
μA
BZB984-C7V5
VR = 5 V
1
μA
BZB984-C8V2
VR = 5 V
700
nA
BZB984-C9V1
VR = 6 V
500
nA
BZB984-C10
VR = 7 V
200
nA
BZB984-C11
VR = 8 V
100
nA
BZB984-C12
VR = 8 V
100
nA
BZB984-C13
VR = 8 V
100
nA
BZB984-C15
VR = 10.5 V
50
nA
3
MIN.
MAX.
DIFFERENTIAL RESISTANCE
rdif (Ω)
at IZ = 1 mA
TYP.
at IZ = 5 mA
MAX.
TYP.
TEMP. COEFF.
SZ (mV/K)
at IZtest = 5 mA
(see Figs 3 and 4)
DIODE CAP.
Cd (pF)
at f = 1 MHz;
VR = 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
IZSM (A) at tp = 100 μs;
Tamb = 25 °C
TYP.
MAX.
MAX.
MAX.
4
2.2
2.6
275
600
70
100
−1.3
450
6.0
2V7
2.5
2.9
300
600
75
100
−1.4
450
6.0
3V0
2.8
3.2
325
600
80
95
−1.6
450
6.0
3V3
3.1
3.5
350
600
85
95
−1.8
450
6.0
3V6
3.4
3.8
375
600
85
90
−1.9
450
6.0
3V9
3.7
4.1
400
600
85
90
−1.9
450
6.0
4V3
4.0
4.6
410
600
80
90
−1.7
450
6.0
4V7
4.4
5.0
425
500
50
80
−1.2
300
6.0
5V1
4.8
5.4
400
480
40
60
−0.5
300
6.0
5V6
5.2
6.0
80
400
15
40
1.0
300
6.0
6V2
5.8
6.6
40
150
6
10
2.2
200
6.0
6V8
6.4
7.2
30
80
6
15
3.0
200
6.0
7V5
7.0
7.9
30
80
6
15
3.6
150
4.0
8V2
7.7
8.7
40
80
6
15
4.3
150
4.0
9V1
8.5
9.6
40
100
6
15
5.2
150
3.0
10
9.4
10.6
50
150
8
20
6.0
90
3.0
11
10.4
11.6
50
150
10
20
6.9
90
2.5
12
11.4
12.7
50
150
10
25
7.9
85
2.5
13
12.4
14.1
50
170
10
30
8.8
80
2.5
15
13.8
15.6
50
200
10
30
10.7
75
2.0
Product data sheet
BZB984 series
2V4
NXP Semiconductors
WORKING VOLTAGE
VZ (V)
I
at
BZB984Z = 5 mA
Cxxx
Tol. ≈5%
Voltage regulator double diodes
2002 Jun 21
Table 1 Per type BZB984-C2V4 to C15
Tj = 25 °C unless otherwise specified.
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB984 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
CONDITIONS
thermal resistance from junction to soldering point
Rth j-a
thermal resistance from junction to ambient
VALUE
UNIT
2 diodes loaded; note 1
125
K/W
1 diode loaded; note 1
230
K/W
2 diodes loaded; note 2
294
K/W
1 diode loaded; note 2
472
K/W
Notes
1. Solder points on cathode tabs.
2. Device mounted on an FR4 printed-circuit board.
Soldering
The only recommended soldering method is reflow soldering.
GRAPHICAL DATA
MLD362
300
MLD363
0.5
handbook, halfpage
handbook, halfpage
SZ
(mV/K)
IF
(mA)
4V7
0
4V3
200
−0.5
2V4
2V7
3V9
−1
100
3V6
−1.5
0
0.6
0.7
0.8
0.9
VF (V)
3V3
3V0
−2
10−1
1
Tj = 25 °C.
BZB984-C2V4 to C4V7.
Tj = 25 to 150 °C.
Fig.2
Fig.3
Forward current as a function of forward
voltage; typical values.
2002 Jun 21
5
1
10
IZ (mA)
102
Temperature coefficient as a function of
working current; typical values.
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB984 series
MLD364
12
handbook, halfpage
15
SZ
(mV/K)
13
12
11
10
9V1
8V2
7V5
6V8
6V2
5V6
5V1
8
4
0
−4
10−1
1
10
IZ (mA)
102
BZB984-C5V1 to C15.
Tj = 25 to 150 °C.
Fig.4
Temperature coefficient as a function of
working current; typical values.
2002 Jun 21
6
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB984 series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT663
D
E
B
X
Y
HE
3
A
1
c
2
e1
w M B
bp
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
bp
c
D
E
e
e1
HE
Lp
w
y
mm
0.6
0.5
0.33
0.23
0.18
0.08
1.7
1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
JEITA
ISSUE DATE
01-12-04
02-05-21
SOT663
2002 Jun 21
EUROPEAN
PROJECTION
7
NXP Semiconductors
Product data sheet
Voltage regulator double diodes
BZB984 series
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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NXP Semiconductors makes no representation or
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Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2002 Jun 21
8
NXP Semiconductors
Customer notification
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Printed in The Netherlands
613514/02/pp9
Date of release: 2002 Jun 21
Document order number: 9397 750 09768