PESD36VS2UT Low capacitance unidirectional double ESD protection diode Rev. 01 — 16 July 2009 Product data sheet 1. Product profile 1.1 General description Low capacitance unidirectional double ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package designed to protect up to two signal lines from the damage caused by ESD and other transients. 1.2 Features n Unidirectional ESD protection of two lines n Low diode capacitance: Cd = 17 pF n Max. peak pulse power: PPP = 160 W n Low clamping voltage: VCL = 55 V n Ultra low leakage current: IRM ≤ 1 µA n ESD protection up to 30 kV n IEC 61000-4-2; level 4 (ESD) n IEC 61000-4-5 (surge); IPP = 2.5 A n AEC-Q101 qualified 1.3 Applications n n n n Computers and peripherals Audio and video equipment Cellular handsets and accessories Subscriber Identity Module (SIM) card protection n Portable electronics n Communication systems n 10/100 Mbit/s Ethernet 1.4 Quick reference data Table 1. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 36 V f = 1 MHz; VR = 0 V - 17 35 pF Per diode VRWM reverse standoff voltage Cd diode capacitance PESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode 2. Pinning information Table 2. Pinning Pin Description 1 cathode (diode 1) 2 cathode (diode 2) 3 common anode Simplified outline Graphic symbol 3 1 3 2 1 2 006aaa154 3. Ordering information Table 3. Ordering information Type number PESD36VS2UT Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4. Marking codes Type number Marking code[1] PESD36VS2UT LF* [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions peak pulse power tp = 8/20 µs peak pulse current tp = 8/20 µs Min Max Unit [1][2] - 160 W [1][2] - 2.5 A Per diode PPP IPP Per device Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 or 2 to pin 3. PESD36VS2UT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 16 July 2009 2 of 12 PESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode Table 6. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions electrostatic discharge voltage IEC 61000-4-2 (contact discharge) Min Max Unit [1][2] - 30 kV [2] - 400 V - 8 kV Per diode VESD machine model MIL-STD-883 (human body model) [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to pin 2. Table 7. ESD standards compliance Standard Conditions Per diode IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 8/20 µs pulse waveform according to IEC 61000-4-5 60 ns Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESD36VS2UT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 16 July 2009 3 of 12 PESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - - 36 V - < 0.02 1 µA Per diode VRWM reverse standoff voltage IRM reverse leakage current VRWM = 30 V VBR breakdown voltage IR = 5 mA Cd diode capacitance f = 1 MHz; VR = 0 V VCL clamping voltage IPP = 1 A rdif differential resistance IR = 0.5 mA 40 44 - V [1] - 17 35 pF [1][2] - 55 60 V - - 300 Ω [1] Measured from pin 1 or 2 to pin 3. [2] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. 006aab615 20 Cd (pF) 15 10 5 0 0 10 20 30 40 VR (V) f = 1 MHz; Tamb = 25 °C Fig 3. Diode capacitance as a function of reverse voltage; typical values PESD36VS2UT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 16 July 2009 4 of 12 PESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode I IPP −VCL −VBR −VRWM V −IRM −IR − −VCL −VBR −VRWM IR IRM −IRM −IR VRWM VBR VCL + P-N − −IPP + −IPP 006aaa676 006aaa407 Measured from pin 1 or 2 to pin 3. Fig 4. V-I characteristics for a unidirectional ESD protection diode Measured from pin 1 to pin 2. Fig 5. V-I characteristics for a bidirectional ESD protection diode PESD36VS2UT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 16 July 2009 5 of 12 PESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode ESD TESTER 450 Ω RZ RG 223/U 50 Ω coax 10× ATTENUATOR 4 GHz DIGITAL OSCILLOSCOPE 50 Ω CZ note 1 Note 1: IEC61000-4-2 network CZ = 150 pF; RZ = 330 Ω DUT: PESD36VS2UT vertical scale = 200 V/div horizontal scale = 50 ns/div GND vertical scale = 10 V/div horizontal scale = 50 ns/div GND unclamped +1 kV ESD voltage waveform (IEC61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC61000-4-2 network) vertical scale = 10 V/div horizontal scale = 50 ns/div clamped −1 kV ESD voltage waveform (IEC61000-4-2 network) 006aab616 Fig 6. ESD clamping test setup and waveforms PESD36VS2UT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 16 July 2009 6 of 12 PESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode 7. Application information The PESD36VS2UT is designed for the protection of up to two unidirectional data or signal lines from the damage caused by ESD and surge pulses. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESD36VS2UT provides a surge capability of 160 W per line for an 8/20 µs waveform. line 1 to be protected line 1 to be protected line 2 to be protected PESD36VS2UT GND unidirectional protection of two lines PESD36VS2UT GND bidirectional protection of one line 006aab617 Fig 7. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. 8. Test information 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. PESD36VS2UT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 16 July 2009 7 of 12 PESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm Fig 8. 0.15 0.09 04-11-04 Package outline PESD36VS2UT (SOT23/TO-236AB) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PESD36VS2UT [1] Package SOT23 Description 4 mm pitch, 8 mm tape and reel 3000 10000 -215 -135 For further information and the availability of packing methods, see Section 14. PESD36VS2UT_1 Product data sheet Packing quantity © NXP B.V. 2009. All rights reserved. Rev. 01 — 16 July 2009 8 of 12 PESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 Fig 9. sot023_fr Reflow soldering footprint PESD36VS2UT (SOT23/TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 10. Wave soldering footprint PESD36VS2UT (SOT23/TO-236AB) PESD36VS2UT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 16 July 2009 9 of 12 PESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD36VS2UT_1 20090716 Product data sheet - - PESD36VS2UT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 16 July 2009 10 of 12 PESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 13.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESD36VS2UT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 16 July 2009 11 of 12 PESD36VS2UT NXP Semiconductors Low capacitance unidirectional double ESD protection diode 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Application information. . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Quality information . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information. . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 16 July 2009 Document identifier: PESD36VS2UT_1