PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package Rev. 02 — 20 August 2009 Product data sheet 1. Product profile 1.1 General description Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23 (TO-236AB) small SMD plastic package designed to protect one high-speed data line from the damage caused by ESD and other transients. 1.2 Features n n n n Unidirectional ESD protection of one line Ultra low diode capacitance: Cd = 0.6 pF Max. peak pulse power: PPP up to 200 W Low clamping voltage n ESD protection > 23 kV n IEC 61000-4-2; level 4 (ESD) n IEC 61000-4-5; (surge) 1.3 Applications n 10/100/1000 Ethernet n FireWire n Communication systems n Local Area Network (LAN) equipment n Computers and peripherals n High-speed data lines 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VRWM reverse stand-off voltage Conditions Min Typ Max Unit PESD3V3U1UT - - 3.3 V PESD5V0U1UT - - 5.0 V PESD12VU1UT - - 12 V PESD15VU1UT - - 15 V PESD24VU1UT Cd [1] diode capacitance Measured from pin 1 to 2 f = 1 MHz; VR = 0 V [1] - - 24 V - 0.6 1.5 pF PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 cathode ESD protection diode 2 cathode compensation diode 3 common anode Symbol 3 1 3 2 1 2 006aaa441 3. Ordering information Table 3. Ordering information Type number PESD3V3U1UT Package Name Description Version - plastic surface mounted package; 3 leads SOT23 PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT 4. Marking Table 4. Marking codes Type number Marking code[1] PESD3V3U1UT *AP PESD5V0U1UT *AQ PESD12VU1UT *AR PESD15VU1UT *AS PESD24VU1UT *AT [1] * = -: made in Hong Kong * = p: made in Hong Kong * = t: made in Malaysia * = W: made in China PESDXU1UT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 2 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Min Max Unit PESD3V3U1UT - 80 W PESD5V0U1UT - 80 W PESD12VU1UT - 200 W PESD15VU1UT - 200 W - 200 W PESD3V3U1UT - 5 A PESD5V0U1UT - 5 A PESD12VU1UT - 5 A PESD15VU1UT - 5 A PESD24VU1UT - 3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C PPP Parameter Conditions peak pulse power 8/20 µs [1] PESD24VU1UT peak pulse current IPP [1] 8/20 µs Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. PESDXU1UT_SER_2 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 3 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package Table 6. ESD maximum ratings Symbol Parameter Conditions Min Max Unit PESD3V3U1UT - 30 kV PESD5V0U1UT - 30 kV PESD12VU1UT - 30 kV PESD15VU1UT - 30 kV PESD24VU1UT - 23 kV - 10 kV electrostatic discharge voltage VESD PESDxU1UT IEC 61000-4-2 (contact discharge) HBM MIL-STD-883 [1] Device stressed with ten non-repetitive ESD pulses. [2] Measured from pin 1 to 2 Table 7. [1][2] ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) HBM MIL-STD-883; class 3 > 4 kV 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 PESDXU1UT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 4 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 6. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified Symbol Parameter VRWM reverse stand-off voltage Conditions Min Typ Max Unit PESD3V3U1UT - - 3.3 V PESD5V0U1UT - - 5.0 V PESD12VU1UT - - 12 V PESD15VU1UT - - 15 V PESD24VU1UT - - 24 V reverse leakage current IRM PESD3V3U1UT VRWM = 3.3 V - 0.25 2 µA PESD5V0U1UT VRWM = 5.0 V - 0.03 1 µA PESD12VU1UT VRWM = 12 V - <1 50 nA PESD15VU1UT VRWM = 15 V - <1 50 nA PESD24VU1UT VRWM = 24 V - <1 50 nA PESD3V3U1UT 5.8 6.4 6.9 V PESD5V0U1UT 7.0 7.6 8.2 V PESD12VU1UT 14.2 15.0 16.7 V PESD15VU1UT 17.1 18.9 20.3 V breakdown voltage VBR [2] IR = 5 mA PESD24VU1UT 25.4 27.8 30.3 V - 0.6 1.5 pF IPP = 1 A - - 9 V IPP = 5 A - - 20 V IPP = 1 A - - 12 V IPP = 5 A - - 21 V IPP = 1 A - - 23 V IPP = 5 A - - 39 V IPP = 1 A - - 28 V IPP = 5 A - - 53 V IPP = 1 A - - 40 V IPP = 3 A - - 76 V PESD3V3U1UT - - 400 Ω PESD5V0U1UT - - 80 Ω PESD12VU1UT - - 200 Ω PESD15VU1UT - - 225 Ω PESD24VU1UT - - 300 Ω Cd diode capacitance VCL clamping voltage PESD3V3U1UT PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT differential resistance rdif [2] f = 1 MHz; VR = 0 V [1][2] IR = 1 mA [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Measured from pin 1 to 2 PESDXU1UT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 5 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package I 006aaa442 10 IR IR(25˚C) −VCL −VBR −VRWM V − −IRM −IR 1 −IPP 10−1 −100 + P-N −50 0 50 100 150 Tj (°C) 006aaa407 PESD3V3U1UT; PESD5V0U1UT IR is less than 10 nA at 150 °C for: PESD12VU1UT; PESD15VU1UT; PESD24VU1UT Fig 3. V-I characteristics Fig 4. Relative variation of reverse leakage current as a function of junction temperature; typical values PESDXU1UT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 6 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 7. Application information The PESDxU1UT series is designed for protection of high-speed datalines from damage caused by ESD and surge pulses. PESDxU1UT devices combine an ESD protection diode and an ultra low capacitance compensation diode to ensure an effective device capacitance as low as 0.6 pF. The PESDxU1UT series provides a surge capability of up to 200 W per line for an 8/20 µs waveform. protected data line n.c. 2 1 1 2 3 3 n.c. ground PESDxU1UT PESDxU1UT 006aaa443 Two PESDxU1UT devices in anti-parallel configuration provide ESD protection in a common-mode application. The two PESDxU1UT devices should be connected as follows: protected data line is connected to device 1 / pin 2 device 2 / pin 1 Ground is connected to device 1 / pin 1 device 2 / pin 2 pin 3 is not connected for both devices Fig 5. Bidirectional ESD protection of one line, common mode I/O 1 ETHERNET TRANSCEIVER n.c. 2 1 1 2 3 3 n.c. I/O 2 PESDxU1UT PESDxU1UT 006aaa444 Two PESDxU1UT devices in anti-parallel configuration provide ESD protection in a differential-mode configuration as e.g. for Ethernet applications. The two PESDxU1UT should be connected as follows: I/O line 1 is connected to device 1 / pin 2 device 2 / pin 1 I/O line 2 is connected to device 1 / pin 1 device 2 / pin 2 pin 3 is not connected for both devices Fig 6. Differential mode Ethernet protection PESDXU1UT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 7 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The following guidelines are recommended: 1. Place the PESDxU1UT as close to the input terminal or connector as possible. 2. The path length between the PESDxU1UT and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all printed-circuit board conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer printed-circuit boards, use ground vias. PESDXU1UT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 8 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 8. Test information ESD TESTER RZ 450 Ω 4 GHz DIGITAL OSCILLOSCOPE RG 223/U 50 Ω coax 10× ATTENUATOR 50 Ω CZ IEC 61000-4-2 network CZ = 150 pF; RZ = 330 Ω D.U.T. (Device Under Test) vertical scale = 20 V/div; horizontal scale = 50 ns/div vertical scale = 200 V/div horizontal scale = 50 ns/div PESD24VU1UT GND PESD15VU1UT GND PESD12VU1UT GND PESD5V0U1UT GND GND PESD3V3U1UT GND unclamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) clamped +1 kV ESD voltage waveform (IEC 61000-4-2 network) GND GND vertical scale = 200 V/div horizontal scale = 50 ns/div unclamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) Fig 7. vertical scale = 20 V/div horizontal scale = 50 ns/div clamped −1 kV ESD voltage waveform (IEC 61000-4-2 network) 006aaa445 ESD clamping test setup and waveforms PESDXU1UT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 9 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 0.15 0.09 Dimensions in mm Fig 8. 04-11-04 Package outline SOT23 (TO-236AB) 10. Packing information Table 9. Packing methods The -xxx numbers are the last three digits of the 12NC ordering code.[1] Type number PESD3V3U1UT Package SOT23 Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -215 -235 PESD5V0U1UT PESD12VU1UT PESD15VU1UT PESD24VU1UT [1] For further information and the availability of packing methods, see Section 13. PESDXU1UT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 10 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PESDXU1UT_SER_2 20090820 Product data sheet - PESDXU1UT_SER_1 Modifications: PESDXU1UT_SER_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. 20050511 Product data sheet PESDXU1UT_SER_2 Product data sheet - - © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 11 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 12.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 12.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESDXU1UT_SER_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 02 — 20 August 2009 12 of 13 PESDxU1UT series NXP Semiconductors Ultra low capacitance ESD protection diode in SOT23 package 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 7 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information. . . . . . . . . . . . . . . . . . . . . 12 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 20 August 2009 Document identifier: PESDXU1UT_SER_2