GaAs MMIC GN01094B GaAs IC (with built-in ferroelectric) Unit : mm 0.12 +0.05 −0.02 1.25±0.1 ■ Features 0.1 4 2.1±0.1 5 6 0.425 0.2±0.05 0.2±0.1 For the preamplifier of the transmitting section in a cellular phone Other communication equipment 1 3 2 0.65 0.425 R0.2 • Super miniature S-Mini 6-pin package (2125 size) • Transmitter amplifier : Wide dynamic range on low operation current : Gain control function built-in 0.65 6 - 0° to 10° 0.2 2.0±0.1 Circuit current Symbol Ratings Unit VDD 8 V IDD 80 mA Gate control voltage VAGC 0 to 3 V Reference voltage VREF 5 V Max input power PIN −5 dBm Allowable power dissipation PD 150 mW Operating ambient temperature Topr −30 to +90 °C Storage temperature Tstg −40 to +120 °C 0 to 0.1 Parameter Power supply voltage 0.7±0.1 0.9±0.1 ■ Absolute Maximum Ratings Ta=25 °C 1 : VDD2 4 : RFIN 2 : VREF 5 : GND 3 : VDD1 6 : VAGC S Mini Type Package (6-pin) EIAJ : SC-88 Marking Symbol : KV ■ Electrical Characteristics VDD1=VDD2=VREF=3.0 V, f=906 MHz, Ta=25 °C±3 °C Parameter Symbol Conditions IDD VAGC=2.0 V, PIN=−20 dBm Power gain 1 *1 PG1 VAGC=2.0 V, PIN=−20 dBm *1 PG2 VAGC=0.5 V, PIN=−20 dBm Dynamic range DR PG1−PG2 Adjacent channel leakage power (ACP) *1, 2 ACP PIN=−15 dBm, POUT=5 dBm ±900 kHz Detuning, 30 kHz Bandwidth Circuit current Power gain 2 *1 min 27 typ max Unit 32 40 mA 31 −14 35 dB −8 45 −54 dB dB −49 dBc Note) *1 : Refer to measurement circuit. *2 : Design-guaranteed items. 1 GN01094B GaAs MMIC 1000 pF ■ Measurement Circuit VAGC 18 nH 100 pF 15 Ω 1000 pF 4.7 kΩ 15 Ω 4 3 2 1 6 5 RFIN 18 pF VDD1 1000 pF 120 Ω 22 nH 1000 pF VREF VDD2 2 100 pF 100 pF 47 nF 33 nH Out