GaAs MMIC GN02035B GaAs IC (with built-in ferroelectric) Unit : mm 0.12 +0.05 −0.02 1.25±0.1 ■ Features 0.1 4 2.1±0.1 5 6 0.425 0.2±0.05 0.2±0.1 For mixer with built-in local amplifier of cellular phone Other communication equipment 1 2 0.65 0.425 R0.2 • Super miniature S-Mini 6-pin package (2 125 size) • Receiver mixer : Low distortion with local amplifier 3 0.65 6 - 0° to 10° 0.2 2.0±0.1 Input voltage Symbol Ratings Unit VIN −3 V Input current IIN 1 mA Max input power PIN 10 dBm Lo input Input voltage VIN −3 V section Input current IIN 1 mA PIN 10 dBm Lo output Output voltage VOUT 5 V section Output current IOUT 10 mA Mix·Lo Input voltage VIN −3 V section Input current IIN 1 mA IF section Output voltage VOUT 5 V Output current IOUT 10 mA PD 100 mW Max input power Overall Allowable power dissipation Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Parameter RF section 0.7±0.1 0.9±0.1 ■ Absolute Maximum Ratings Ta=25°C 1 : RF in 4 : Lo out 2 : GND 5 : Mix·Lo in 3 : Lo in 6 : IF out S Mini Type Package (6-pin) Marking Symbol : KD ■ Electrical Characteristics Ta=25°C±3°C Parameter Symbol Conditions min typ max Unit Mixer current *1 IMIX VIFOUT=3 V, fRF=850 MHz fLo=740 MHz 4.3 mA Local amplifier current *1 ILo VLoOUT=3 V, fRF=850 MHz fLo=740 MHz 3.2 mA Conversion gain *1 CG VIFOUT=VLoOUT=3 V fRF=850 MHz, fLo=740 MHz 11 dB VIFOUT=VLoOUT=3 V, fRF=850.1 MHz fLo=740.0 MHz, fIF=110.0 MHz or 110.1 MHz, fIM3=109.9 MHz or 110.2 MHz 7.0 dBm VIFOUT=VLoOUT=3 V, fLo=740 MHz fIF=110 MHz 6.2 dB Output third harmonics mutual modulation distortion *1 Noise figure *1, 2 OIP3 NF Note) *1 : PRF=−27 dBm, PLo=−7 dBm *2 : Design-guaranteed items. 1