PESD5V0S1UJ; PESD12VS1UJ Unidirectional ESD protection for transient voltage suppression Rev. 01 — 3 June 2009 Product data sheet 1. Product profile 1.1 General description Unidirectional ElectroStatic Discharge (ESD) protection diodes in a very small Surface-Mounted Device (SMD) plastic package designed to protect one signal line from the damage caused by ESD and transient overvoltage. Table 1. Product overview Type number PESD5V0S1UJ Package Configuration NXP JEITA SOD323F SC-90 single PESD12VS1UJ 1.2 Features n Transient Voltage Suppression (TVS) protection of one line n Max. peak pulse power: PPP = 890 W n Low clamping voltage: VCL = 19 V n Low leakage current: IRM = 300 nA n ESD protection up to 30 kV n IEC 61000-4-2; level 4 (ESD) n IEC 61000-4-5 (surge); IPP = 47 A n AEC-Q101 qualified 1.3 Applications n Computers and peripherals n Audio and video equipment n Cellular handsets and accessories n Communication systems n Portable electronics n Medical and industrial equipment 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage Cd Conditions Min Typ Max Unit PESD5V0S1UJ - - 5 V PESD12VS1UJ - - 12 V PESD5V0S1UJ - 480 530 pF PESD12VS1UJ - 160 180 pF diode capacitance f = 1 MHz; VR = 0 V PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression 2. Pinning information Table 3. Pinning Pin Description 1 cathode 2 anode Simplified outline Graphic symbol [1] 1 2 1 2 006aaa152 [1] The marking bar indicates the cathode. 3. Ordering information Table 4. Ordering information Type number PESD5V0S1UJ Package Name Description Version SC-90 plastic surface-mounted package; 2 leads SOD323F PESD12VS1UJ 4. Marking Table 5. Marking codes Type number Marking code PESD5V0S1UJ 1Q PESD12VS1UJ 1R 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol PPP IPP Parameter Conditions peak pulse power tp = 8/20 µs Max Unit PESD5V0S1UJ - 890 W PESD12VS1UJ - 600 W PESD5V0S1UJ - 47 A PESD12VS1UJ - 22.5 A peak pulse current tp = 8/20 µs PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet Min [1][2] [1][2] © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 2 of 14 PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb ≤ 25 °C Min Max Unit [3] - 420 mW [4] - 720 mW Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. [2] Soldering point of cathode tab. [3] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Table 7. ESD maximum ratings Tamb = 25 °C unless otherwise specified. Symbol VESD [1] Parameter Conditions electrostatic discharge voltage Min Max Unit - 30 kV machine model - 400 V MIL-STD-883 (human body model) - 16 kV IEC 61000-4-2 (contact discharge) Device stressed with ten non-repetitive ESD pulses. Table 8. ESD standards compliance Standard Conditions IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact) MIL-STD-883; class 3 (human body model) > 4 kV PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet [1] © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 3 of 14 PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression 001aaa631 IPP 001aaa630 120 100 % 90 % 100 % IPP; 8 µs IPP (%) 80 e−t 50 % IPP; 20 µs 40 10 % 0 10 20 30 30 ns 40 t (µs) Fig 1. t tr = 0.7 ns to 1 ns 0 60 ns 8/20 µs pulse waveform according to IEC 61000-4-5 Fig 2. ESD pulse waveform according to IEC 61000-4-2 6. Thermal characteristics Table 9. Symbol Rth(j-a) Rth(j-sp) Thermal characteristics Parameter Conditions thermal resistance from junction to ambient in free air thermal resistance from junction to solder point Typ Max Unit - - 290 K/W [2] - - 170 K/W [3] - - 35 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [3] Soldering point of cathode tab. PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet Min [1] © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 4 of 14 PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression 7. Characteristics Table 10. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter VRWM reverse standoff voltage IRM Conditions - - 5 V - 12 V VRWM = 5 V - 0.3 4 µA VRWM = 12 V - <1 100 nA PESD5V0S1UJ 6.2 6.8 7.3 V PESD12VS1UJ 13.3 14.5 15.75 V - 480 530 pF - 160 180 pF IPP = 47 A - - 19 V IPP = 25 A - - 13.5 V IPP = 5 A - - 9.8 V reverse leakage current breakdown voltage diode capacitance IR = 5 mA f = 1 MHz; VR = 0 V PESD12VS1UJ PESD12VS1UJ [1] [1] clamping voltage PESD5V0S1UJ rdif differential resistance IPP = 22.5 A - - 27 V IPP = 15 A - - 23.5 V IPP = 5 A - - 19 V IR = 5 mA PESD5V0S1UJ - 2 100 Ω PESD12VS1UJ - 5 100 Ω Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet Unit - PESD5V0S1UJ VCL Max PESD12VS1UJ PESD12VS1UJ Cd Typ PESD5V0S1UJ PESD5V0S1UJ VBR Min © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 5 of 14 PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression 006aab414 104 001aaa193 1.2 PPP PPP (W) PPP(25°C) 103 0.8 (1) (2) 102 0.4 101 101 102 103 0 104 0 50 100 150 tp (µs) 200 Tj (°C) Tamb = 25 °C (1) PESD5V0S1UJ (2) PESD12VS1UJ Fig 3. Peak pulse power as a function of exponential pulse duration; typical values 006aab415 500 Fig 4. Relative variation of peak pulse power as a function of junction temperature; typical values 006aab416 103 Cd (pF) (1) IRM (nA) 400 102 300 10 (2) (1) 200 1 (2) 100 0 0 4 8 12 10−1 −75 −25 VR (V) f = 1 MHz; Tamb = 25 °C 25 75 125 175 Tamb (°C) (1) PESD5V0S1UJ (1) PESD5V0S1UJ (2) PESD12VS1UJ (2) PESD12VS1UJ Fig 5. Diode capacitance as a function of reverse voltage; typical values Fig 6. Reverse leakage current as a function of ambient temperature; typical values PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 6 of 14 NXP Semiconductors PESD5V0S1UJ; PESD12VS1UJ Unidirectional ESD protection for transient voltage suppression I −VCL −VBR −VRWM V −IRM −IR − + P-N −IPP 006aaa407 Fig 7. V-I characteristics for a unidirectional ESD protection diode PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 7 of 14 PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression ESD TESTER acc. to IEC 61000-4-2 CZ = 150 pF; RZ = 330 Ω 4 GHz DIGITAL OSCILLOSCOPE 450 Ω RZ RG 223/U 50 Ω coax 10× ATTENUATOR 50 Ω CZ DUT (DEVICE UNDER TEST) vertical scale = 10 V/div horizontal scale = 10 ns/div vertical scale = 10 A/div horizontal scale = 15 ns/div PESD12VS1UJ PESD5V0S1UJ GND clamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) unclamped +8 kV ESD pulse waveform (IEC 61000-4-2 network) vertical scale = 10 V/div horizontal scale = 10 ns/div vertical scale = 10 A/div horizontal scale = 15 ns/div GND PESD12VS1UJ PESD5V0S1UJ clamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) unclamped −8 kV ESD pulse waveform (IEC 61000-4-2 network) Fig 8. 006aab532 ESD clamping test setup and waveforms PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 8 of 14 PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression 8. Application information PESD5V0S1UJ and PESD12VS1UJ are designed for the protection of one unidirectional data or signal line from the damage caused by ESD and transient overvoltage. The devices may be used on lines where the signal polarities are either positive or negative with respect to ground. The PESD5V0S1UJ provides a surge capability of 890 W and the PESD12VS1UJ provides a surge capability of 600 W per line for an 8/20 µs waveform. line to be protected (positive signal polarity) line to be protected (negative signal polarity) DUT DUT GND GND unidirectional protection of one line 006aab251 Fig 9. Application diagram Circuit board layout and protection device placement Circuit board layout is critical for the suppression of ESD and Electrical Fast Transient (EFT). The following guidelines are recommended: 1. Place the device as close to the input terminal or connector as possible. 2. The path length between the device and the protected line should be minimized. 3. Keep parallel signal paths to a minimum. 4. Avoid running protected conductors in parallel with unprotected conductors. 5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops. 6. Minimize the length of the transient return path to ground. 7. Avoid using shared transient return paths to a common ground point. 8. Ground planes should be used whenever possible. For multilayer PCBs, use ground vias. PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 9 of 14 NXP Semiconductors PESD5V0S1UJ; PESD12VS1UJ Unidirectional ESD protection for transient voltage suppression 9. Test information 9.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 10. Package outline 1.35 1.15 0.80 0.65 0.5 0.3 1 2.7 2.3 1.8 1.6 2 0.40 0.25 Dimensions in mm 0.25 0.10 04-09-13 Fig 10. Package outline PESDxS1UJ (SOD323F/SC-90) 11. Packing information Table 11. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number Package PESD5V0S1UJ SOD323F Description 4 mm pitch, 8 mm tape and reel Packing quantity 3000 10000 -115 -135 PESD12VS1UJ [1] For further information and the availability of packing methods, see Section 15. PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 10 of 14 PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression 12. Soldering 3.05 2.2 2.1 solder lands solder resist 0.5 (2×) 1.65 0.95 0.6 (2×) solder paste occupied area 0.5 (2×) 0.6 (2×) Dimensions in mm sod323f_fr Fig 11. Reflow soldering footprint PESDxS1UJ (SOD323F/SC-90) PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 11 of 14 PESD5V0S1UJ; PESD12VS1UJ NXP Semiconductors Unidirectional ESD protection for transient voltage suppression 13. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes PESD5V0S1UJ_PESD12VS1UJ_1 20090603 Product data sheet - - PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 12 of 14 NXP Semiconductors PESD5V0S1UJ; PESD12VS1UJ Unidirectional ESD protection for transient voltage suppression 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. 14.2 Definitions Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 14.3 Disclaimers General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 14.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 15. Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] PESD5V0S1UJ_PESD12VS1UJ_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev. 01 — 3 June 2009 13 of 14 NXP Semiconductors PESD5V0S1UJ; PESD12VS1UJ Unidirectional ESD protection for transient voltage suppression 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 9.1 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Application information. . . . . . . . . . . . . . . . . . . 9 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10 Quality information . . . . . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Packing information. . . . . . . . . . . . . . . . . . . . . 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Contact information. . . . . . . . . . . . . . . . . . . . . 13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 3 June 2009 Document identifier: PESD5V0S1UJ_PESD12VS1UJ_1