SHD114511 SHD114511A SHD114511B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4517, REV. A POWER SCHOTTKY RECTIFIER Low Reverse Leakage Applications: Switching Power Supply Converters Free-Wheeling Diodes Polarity Protection Diode Features: Ultra Low Reverse Leakage Current Soft Reverse Recovery at Low and High Temperature Very Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Capacity Guard Ring for Enhanced Durability and Long Term Reliability Guaranteed Reverse Avalanche Characteristics Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Current Max. Peak One Cycle NonRepetitive Surge Current Non-Repetitive Avalanche Energy Repetitive Avalanche Current Thermal Resistance Max. Junction Temperature Max. Storage Temperature Symbol VRWM IF(AV) IFSM EAS IAR RthJC TJ Tstg Condition 50% duty cycle, rectangular wave form 8.3 ms, half Sine wave (per leg) TJ = 25 C, IAS = 1.3 A, L = 40mH (per leg) IAS decay linearly to 0 in 1 s limited by TJ max VA=1.5VR Per Package - Max. 30 60 Units V A 860 A 27 mJ 1.3 A 0.7 -65 to +175 -65 to +175 C/W C C Electrical Characteristics: Characteristics Max. Forward Voltage Drop Symbol VF1 Condition Max. Units 0.53 V @ 60A, Pulse, TJ = 25 C (per leg) measured at the leads VF2 0.43 V @ 60A, Pulse, TJ = 125 C (per leg) measured at the leads Max. Reverse Current IR1 @VR = 30V, Pulse, 6 mA TJ = 25 C (per leg) IR2 @VR = 30V, Pulse, 300 mA TJ = 125 C (per leg) Max. Junction Capacitance CT 3300 pF @VR = 5 V, TC = 25 C fSIG = 1 MHz, VSIG = 50mV (p-p) (per leg) Due to the nature of the 30V Schottky devices, some degradation in trr performance at high temperatures should be expected, unlike conventional lower voltage Schottkys. ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] SHD114511 SHD114511A SHD114511B SENSITRON TECHNICAL DATA DATA SHEET 4517, REV. A Mechanical Dimensions: in inches / mm .560±.020 .550±.020 (14.0±.508) .410±.010 (10.4±.254) (14.2±.508) .410±.010 (10.4±.254) .410±.010 (10.4±.254) .410±.010 (10.4±.254) .410±.010 (10.4±.254) .200±.010 (5.08 ±.254) .075 (1.91) Max Moly Lid .410±.010 (10.4±.254) Moly Lid Copper Anode .020±.005 R .090 (2.29) Max (.508±.127 ) .020±.002 (.508±.051) Moly Bas e (Cathode) Alumina Ring .015±.005 (.381±.127) .020±.005 R (.508±.127 ) Alumina Ring .075 (1.91) Max .150±.010 (3.81±.254) Alumina Ring .060±.010 (1.52±.254) Moly Anode .015±.002 (.381±.051) Moly Base (Cathode) Moly .060±.010 SHD-3 SHD-3A (1.52±.254) SHD-3B Typical Forward Characteristics Typical Reverse Characteristics 3 2 10 10 Instantaneous Reverse Current - I R (mA) 150 °C 101 125 °C 100 °C 101 75 °C 100 50 °C 10-1 25 °C 10-2 125 °C 0 100 10-1 0.0 0.1 0.2 0.3 0.4 0.5 Forward Voltage Drop -FV(V) Vf Curves shown are for die only. 10 20 30 Reverse Voltage - R V (V) 40 Typical Junction Capacitance 25 °C 0.6 Junction Capacitance - C T (pF) Instantaneous Forward Current - I F (A) 150 °C 102 3000 2700 2400 2100 1800 0 10 20 30 Reverse Voltage - R V (V) ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected] 40 SHD114511 SHD114511A SHD114511B SENSITRON TECHNICAL DATA DATA SHEET 4517, REV. 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When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. ©2012 Sensitron Semiconductor 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 www.sensitron.com [email protected]