Auto MOSFET Naming Automotive MOSFET Naming System I P G 20 N 04 S4 L - 07 A AOI-ready I Infineon only valid for T(S)DSON RDSon,max in mΩ “H” in front for higher ohmic version i.e. H5=5.5mΩ “R” as decimal separator i.e. 1R3=1.3mΩ Device: P for Power-MOSFET T for Twin Power-MOSFET (Common Drain) L for Logic Level (no L is Normal Level) Package Type: S for SFET1 S2 for OptiMOS™ S3 for OptiMOS™-T S4 for OptiMOS™-T2 P3 for PFET3 Trench P4 for PFET4 Trench B for TO263/D²PAK C for SuperSO8 (TDSON-08) D for TO252/DPAK I for TO262/I2PAK LU for TO-Leadless (H-PSOF, MO-299) P for TO220 G for Dual SuperSO8 (TDSON-08) Z for Shrink SuperSO8 (TSDSON-08) 2013-12-09 Breakdown voltage VBrDSS ÷10 P for p-channel N for n-channel Continuous drain current IDmax Copyright © Infineon Technologies AG 2013. All rights reserved. Page 2