BSZ086P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features V DS -30 V • single P-Channel in S3O8 R DS(on),max 8.6 mΩ • Qualified according JEDEC 1) for target applications ID -40 A PG-TSDSON-8 • 150 °C operating temperature • V GS=25 V, specially suited for notebook applications • Pb-free; RoHS compliant • applications: battery management, load switching • Halogen-free according to IEC61249-2-21 Type Package Marking Lead free Halogen free BSZ086P03NS3E G PG-TSDSON-8 086P3N Yes Yes Packing non-dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C -40 T C=70 °C -40 T A=25 °C2) -13.5 Unit A Pulsed drain current I D,pulse T C=25 °C3) -160 Avalanche energy, single pulse E AS I D=-20 A, R GS=25 Ω 105 mJ Gate source voltage V GS ±25 V Power dissipation P tot T A=25 °C 69 W T A=25 °C2) 2.1 Operating and storage temperature ESD class T j, T stg -55 … 150 JESD22-A114 HBM °C 55/150/56 IEC climatic category; DIN IEC 68-1 1) 1C (1 kV - 2 kV) 260 Soldering temperature °C J-STD20 and JESD22 Rev. 2.02 page 1 2009-11-16 BSZ086P03NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1.8 - - 60 -30 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA 6 cm2 cooling area2) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250µA Gate threshold voltage V GS(th) V DS=V GS, I D=-105 µA -3.1 -2.5 -1.9 Zero gate voltage drain current I DSS V DS=-30 V, V GS=0 V, T j=25 °C - - -1 V DS=-30 V, V GS=0 V, T j=125 °C - - -10 V µA Gate-source leakage current I GSS V GS=-25 V, V DS=0 V - - -100 nA Drain-source on-state resistance R DS(on) V GS=-6 V, I D=-20 A - 8.7 13.4 mΩ V GS=-10 V, I D=-20 A - 6.5 8.6 - 2.2 - Ω 30 43 - S Gate resistance RG Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-20 A 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Fig. 3 for more detailed information Rev. 2.02 page 2 2009-11-16 BSZ086P03NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 3190 4785 - 1520 2280 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 110 165 Turn-on delay time t d(on) - 16 24 Rise time tr - 46 69 Turn-off delay time t d(off) - 35 53 Fall time tf - 8 12 Gate to source charge Q gs - 16.1 21.4 Gate charge at threshold Q g(th) - 5.0 6.7 Gate to drain charge Q gd - 7.4 11.1 Switching charge Q sw - 18.4 25.7 Gate charge total Qg - 43.2 57.5 Gate plateau voltage V plateau - -4.5 - Output charge Q oss - 34.9 46.4 - - 40 - - 160 V GS=0 V, V DS=-15 V, f =1 MHz V DD=-15 V, V GS=10 V, I D=-20 A, R G=6 Ω pF ns Gate Charge Characteristics 3) V DD=-15 V, I D=20 A, V GS=0 to -10 V V DD=-15 V, V GS=0 V nC V nC Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD V GS=0 V, I F=-40 A, T j=25 °C - - -1.1 V Reverse recovery time t rr V R=15 V, I F=|I S|, di F/dt =100 A/µs - 39 - ns Reverse recovery charge Q rr - 34 - nC Rev. 2.02 T C=25 °C page 3 A 2009-11-16 BSZ086P03NS3 G 1 Power dissipation 2 Drain current P tot=f(T C); t p≤10 s I D=f(T C); |V GS|≥10 V; t p≤10 s 80 48 44 70 40 60 36 32 -I D [A] P tot [W] 50 40 28 24 20 30 16 20 12 8 10 4 0 0 0 40 80 120 0 160 40 80 T C [°C] 120 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C1); D =0 Z thJS=f(t p) parameter: t p parameter: D =t p/T 1000 102 160 T C [°C] 101 10 100 1 1 µs 100 100 µs 1 ms Z thJS [K/W] 10 10 ms -I D [A] 101 limited by on-state resistance DC 100 0.5 0.2 0.1 0.05 1 0.02 10-1 0.1 0.01 single pulse 10 -1 10-2 0.1 0.1 10 Rev. 2.02 10-2 0.01 1 -1 10 10 0 -V DS [V] 10 100 1 10 2 page 4 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10-5 10-4 10-3 10-2 10-1 100 t p [s] 10 101 2009-11-16 BSZ086P03NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 40 40 -10 V -4.5 V -5.0 V 35 -4.0 V 30 R DS(on) [mΩ] -I D [A] 30 -4.2V 20 25 -4.5 V 20 15 -4.0 V -5.0 V 10 10 -6V -10 V 5 -3.7 V -3.5 V 0 0 0 1 2 3 0 10 20 -V DS [V] 30 40 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 60 60 50 40 g fs [S] -I D [A] 40 30 20 20 25 °C 150 °C 10 0 0 0 1 2 3 4 5 6 Rev. 2.02 0 10 20 30 -I D [A] -V GS [V] page 5 2009-11-16 BSZ086P03NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-20 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-105 µA 12 4 3.5 R DS(on) [mΩ] 10 max. 3 2.5 -V GS(th) [V] 98 % 8 typ. typ. 2 min. 1.5 6 1 0.5 4 0 -60 -20 20 60 100 140 180 -60 -20 20 T j [°C] 60 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 100 Ciss 25 °C, typ Coss 150 °C, 98% 10 I F [A] C [pF] 10 3 102 150 °C, typ 1 Crss 25 °C, 98% 101 0.1 0 5 10 15 20 25 30 Rev. 2.02 0 0.5 1 1.5 -V SD [V] -V DS [V] page 6 2009-11-16 BSZ086P03NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-20 A pulsed parameter: T j(start) parameter: V DD 10 2 8 7 -15 V -6 V -24 V 6 -I AV [A] 25 °C -V GS [V] 5 100 °C 101 125 °C 4 3 2 1 0 0 100 100 10 1 t AV [µs] 10 2 10 15 Drain-source breakdown voltage 20 40 -Q gate [nC] 3 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 36 V GS Qg -V BR(DSS) [V] 34 32 V g s(th) 30 28 Q g(th) Q sw Q gs 26 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.02 page 7 2009-11-16 BSZ086P03NS3 G Package Outline PG-TSDSON-8 Dimensions in mm Rev. 2.02 page 8 2009-11-16 BSZ086P03NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.02 page 9 2009-11-16