SM5S10 thru SM5S36A Datasheet

SM5S10 thru SM5S36A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
DO-218AB
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
PRIMARY CHARACTERISTICS
VWM
10 V to 36 V
VBR
11.1 V to 44.2 V
PPPM (10 x 1000 μs)
3600 W
PPPM (10 x 10 000 μs)
2800 W
PD
5W
IFSM
500 A
TJ max.
175 °C
Polarity
Uni-directional
Package
DO-218AB
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
per
Polarity: Heatsink is anode
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
with 10/1000 μs waveform
Peak pulse power dissipation
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
VALUE
UNIT
3600
PPPM
PD
W
2800
5.0
W
See next table
A
IFSM
500
A
TJ, TSTG
-55 to +175
°C
IPPM
(1)
Note
(1) Non-repetitive current pulse at T = 25 °C
A
Revision: 18-Sep-12
Document Number: 88382
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM5S10 thru SM5S36A
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
VBR (V)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (μA)
MAXIMUM REVERSE
LEAKAGE
AT VWM
TJ = 175 °C
ID (μA)
MAX. PEAK
MAXIMUM
PULSE CURRENT CLAMPING
AT 10/1000 μs
VOLTAGE
WAVEFORM
AT IPPM
(A)
VC (V)
MIN.
MAX.
TEST
CURRENT
IT
(mA)
SM5S10
11.1
13.6
5.0
10.0
15
250
191
18.8
SM5S10A
11.1
12.3
5.0
10.0
15
250
212
17.0
SM5S11
12.2
14.9
5.0
11.0
10
150
179
20.1
SM5S11A
12.2
13.5
5.0
11.0
10
150
198
18.2
SM5S12
13.3
16.3
5.0
12.0
10
150
164
22.0
SM5S12A
13.3
14.7
5.0
12.0
10
150
181
19.9
SM5S13
14.4
17.6
5.0
13.0
10
150
151
23.8
SM5S13A
14.4
15.9
5.0
13.0
10
150
167
21.5
SM5S14
15.6
19.1
5.0
14.0
10
150
140
25.8
SM5S14A
15.6
17.2
5.0
14.0
10
150
155
23.2
SM5S15
16.7
20.4
5.0
15.0
10
150
134
26.9
SM5S15A
16.7
18.5
5.0
15.0
10
150
148
24.4
SM5S16
17.8
21.8
5.0
16.0
10
150
125
28.8
SM5S16A
17.8
19.7
5.0
16.0
10
150
138
26.0
SM5S17
18.9
23.1
5.0
17.0
10
150
118
30.5
SM5S17A
18.9
20.9
5.0
17.0
10
150
130
27.6
SM5S18
20.0
24.4
5.0
18.0
10
150
112
32.2
SM5S18A
20.0
22.1
5.0
18.0
10
150
123
29.2
SM5S20
22.2
27.1
5.0
20.0
10
150
101
35.8
SM5S20A
22.2
24.5
5.0
20.0
10
150
111
32.4
SM5S22
24.4
29.8
5.0
22.0
10
150
91
39.4
SM5S22A
24.4
26.9
5.0
22.0
10
150
101
35.5
SM5S24
26.7
32.6
5.0
24.0
10
150
84
43.0
SM5S24A
26.7
29.5
5.0
24.0
10
150
93
38.9
SM5S26
28.9
35.3
5.0
26.0
10
150
77
46.6
SM5S26A
28.9
31.9
5.0
26.0
10
150
86
42.1
SM5S28
31.1
38.0
5.0
28.0
10
150
72
50.1
SM5S28A
31.1
34.4
5.0
28.0
10
150
79
45.4
SM5S30
33.3
40.7
5.0
30.0
10
150
67
53.5
SM5S30A
33.3
36.8
5.0
30.0
10
150
74
48.4
SM5S33
36.7
44.9
5.0
33.0
10
150
61
59.0
SM5S33A
36.7
40.6
5.0
33.0
10
150
68
53.3
SM5S36
40.0
48.9
5.0
36.0
10
150
56
64.3
SM5S36A
40.0
44.2
5.0
36.0
10
150
62
58.1
DEVICE
TYPE
Note
• For all types maximum VF = 2.0 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
SYMBOL
VALUE
UNIT
RJC
1.0
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
SM5S10AHE3/2D (1)
UNIT WEIGHT (g)
2.505
PREFERRED PACKAGE CODE
2D
BASE QUANTITY
DELIVERY MODE
750
13" diameter plastic tape and reel,
anode towards the sprocket hole
Note
(1) AEC-Q101 qualified
Revision: 18-Sep-12
Document Number: 88382
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM5S10 thru SM5S36A
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
10 000
Reverse Surge Power (W)
Power Dissipation (W)
8.0
6.0
4.0
2.0
0
1000
50
0
150
100
10
200
Pulse Width (ms) - ½ IPP Exponential Waveform
Fig. 1 - Power Derating Curve
Fig. 4 - Reverse Power Capability
3000
Transient Thermal Impedance (°C/W)
100
Load Dump Power (W)
2500
2000
1500
1000
500
0
50
25
150
Input Peak Pulse Current (%)
100
Case Temperature (°C)
75
100
150
125
RθJC
1
0.1
0.01
0.01
175
0.1
1
10
100
Case Temperature (°C)
t - Pulse Width (s)
Fig. 2 - Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 5 - Typical Transient Thermal Impedance
tr = 10 μs
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
Peak Value
IPPM
100
Half Value - IPP
IPPM
2
50
td
0
0
RθJA
10
10
20
30
t - Time (ms)
40
















Fig. 3 - Pulse Waveform
Revision: 18-Sep-12
Document Number: 88382
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM5S10 thru SM5S36A
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.116 (3.0)
0.093 (2.4)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5)
0.374 (9.5)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.197 (5.0)
0.185 (4.7)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
Lead 1
0.138 (3.5)
0.098 (2.5)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
Revision: 18-Sep-12
Document Number: 88382
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 02-Oct-12
1
Document Number: 91000